Amorphous chromium silicide formation in hydrogenated amorphous silicon

The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi₂ for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi₂ was ≈600 μΩ·cm and independent of annealing temperature.     

化学束外延

本文介绍了化学束外延(CBE)的发明和发展,论述了CBE的原理和设备。文中还介绍了最近提出的一种生长机理。     

THE FLOW PRODUCED IN PARTICLE-SUSPENSION BY AN INFINITE ROTATING DISK:SERIES SOLUTION

To the flow produced in particle-suspension by a rotating disk of infinite extent,the asymptotic behavior at infinity is analyzed.A corresponding series solution is presented.It isshown that this approach yields widely valid solutions of high accuracy for all the cases in whichthat suction or weak injection at the disk surface exists.For the cases that strong injection or par-ticle-free band exists,the series method fails.     

过共晶Al－Si合金共生区激光表面处理

用２ｋＷ连续ＣＯ２激光对过共晶Ａｌ－１８Ｓｉ合金以不同能量密度和扫描速度进行快速熔凝处理。用扫描电镜、电子微区分析仪分析了微观结构。从计算机对Ａｌ－Ｓｉ合金ｆ－ｎｆ系统的非平衡理论计算所得的共生区及实验结果的分析可见，当能量密度和扫描速度决定的凝固条件处于共生区中部时，过共晶Ａｌ－Ｓｉ合金激光表面处理可以得到共晶间距低于２００ｎｍ的完全共晶结构。     

In－BiCaVIG的晶体生长与性能

本文报导了用助熔剂法成功地生长大尺寸掺铟ＢｉＣａＶＩＧ晶体的方法以及实验结果，介绍了该单晶在近红外区的磁光器件中的重要应用。     

聚电解质溶液分子热力学模型

<正>链状聚电解质由于是长链大分子又有很高的电荷密度,其溶液即使在极低的浓度下仍具有很强的负偏差,与Debye-Huckel理论预测的结果相去甚远。工程上使用的Manning模型认为聚离子的电荷密度有一临界值,当超过临界值时,反离子即凝聚在聚离子表面使其实际电荷密度降至临界值。Nagvekar等在该模型的基础上引入NRTL方程,以计及短程相互作用的贡献。Manning等的方法虽然有一定的物理意义,但临界值的确定缺乏可靠的根据。     

多人决策的一类相对均衡解

本文分析由于决策人偏好不同而引起决策差异的多人多目标决策问题，提出了这类决策问题的一类相对均衡解的概念和求取方法。相对均衡解以决策群体偏好的加权集结为基础，能最大程度地反映每个决策人的偏好。文中研究相对均衡解的ＳＷＴ求取方法，并给出了求解的步骤。     

纤维共晶生长界面前沿三维扩散场解析

修正Ｊａｃｋｓｏｎ和Ｈｕｎｔ关于在垂直生长方向截面上溶质扩散各向同性假设，求解三维Ｌａｐｏｌａｃｅ方程，获得纤维共晶生长界面前沿三维稳态扩散场，并证明Ｊａｃｋｓｏｎ和Ｈｕｎｔ的二维模型是实际生长的二维简化和一阶近似，并用丁二腈（ＳＣＮ）一梓脑（ＣＡＭ）纤维共晶系统计算生长界面前沿溶质分布。     

Fundamental solutions for half plane with an oblique edge crack

An elastic half plane with an oblique edge crack is considered in this paper. A pair of concentrated forces or point dislocations is assumed to act at an arbitrary point in the half plane. The half plane with an edge crack is first mapped into a unit circle by a rational mapping function so that the following analysis can be carried out on the mapped plane analytically. Then the complex stress functions are derived by separating the whole problem into two parts; one is the principal part corresponding to the infinite plane acted on by concentrated forces or dislocations, the other is the holomorphic part, which can be determined by making use of the property of regularity of complex stress functions. The stress intensity factors of the crack can be calculated with different inclined angles of the crack, and the displacement and stress components at an arbitrary position in the half plane can be expressed explicitly.