Water-assisted sub-critical crack growth along an interface between polyimide passivation and epoxy underfill

Direct chip attach (DCA) microelectronic packaging technology is gaining prominence due to its numerous advantages. Delamination (debonding) of the underfill epoxy/ polyimide passivation interface of a DCA during hydro-thermal reliability testing has always been one of the salient problems. We have studied the water-assisted sub-critical crack growth along this interface and our measurement offers important clues as to the origins of the poor hydro-thermal testing results for these interfaces. A modified asymmetric double cantilever beam (ADCB) testing technique has been used to measure the sub-critical crack growth velocity v at various relative humidities and temperatures as a function of the crack driving force (strain energy release rate) G ^*. The presence of a significant partial pressure of water p _H2O produces a marked decrease (by up to a factor of 12) in the threshold G ^* for crack growth at measurable velocities. Above the threshold log v rises linearly with but then enters a regime where the crack velocity (v=v ^*) is almost independent of . Finally, at the values of G ^* corresponding to rapid crack propagation in the absence of water, log v increases very rapidly with G ^*. By analogy to the classic work on water-assisted sub-critical crack growth in silica-based glasses, where very similar features are observed, we believe that the sub-critical crack growth along the polyimide-epoxy interface results from stress-assisted hydrolysis of primary covalent bonds, in our case ester bonds across the interface. The regime of just above the threshold corresponds to a physicochemical situation where the water activity (p _{H 2O} ) at the crack tip is the same as that of the gaseous environment. In the regime where v=v ^* constant, the water activity at the crack tip is below that in the environment and the crack growth velocity is limited by the transport of water vapor to the bonds ahead of the crack tip. We develop a model of this crack growth following Wiederhorn 1967 that allows us to predict the sub-critical crack growth as a function of G ^* for arbitrary relative humidity and temperature conditions.     

一阶拟线性严格双曲型方程组弱间断解的精确能控性及能观性

在一阶拟线性双曲型方程组C1解的精确能控性及能观性的基础上,本文通过对弱间断解性质的研究,在初值和边值存在有限个弱间断点的情况下,得到一阶拟线性严格双曲型方程组混合初边值问题的半整体弱间断解的存在唯一性及相应的估计式,进而得到一阶拟线性严格双曲型方程组在弱间断解意义下相应的精确边界能控性及精确边界能观性。     

High Phase Purity of Large‐Sized 1T′‐MoS2 Monolayers with 2D Superconductivity

The development of transition metal dichalcogenides has greatly accelerated research in the 2D realm, especially for layered MoS₂. Crucially, the metallic MoS₂ monolayer is an ideal platform in which novel topological electronic states can emerge and also exhibits excellent energy conversion and storage properties. However, as its intrinsic metallic phase, little is known about the nature of 2D 1T′‐MoS₂, probably because of limited phase uniformity (<80%) and lateral size (usually <1 µm) in produced materials. Herein, solution processing to realize high phase‐purity 1T′‐MoS₂ monolayers with large lateral size is demonstrated. Direct chemical exfoliation of millimeter‐sized 1T′ crystal is introduced to successfully produce a high‐yield of 1T′‐MoS₂ monolayers with over 97% phase purity and unprecedentedly large size up to tens of micrometers. Furthermore, the large‐sized and high‐quality 1T′‐MoS₂ nanosheets exhibit clear intrinsic superconductivity among all thicknesses down to monolayer, accompanied by a slow drop of transition temperature from 6.1 to 3.0 K. Prominently, unconventional superconducting behavior with upper critical field far beyond the Pauli limit is observed in the centrosymmetric 1T′‐MoS₂ structure. The results open up an ideal approach to explore the properties of 2D metastable polymorphic materials.     

Removal of vanadium from wastewater by multi-walled carbon nanotubes

Nitric acid heating reflux modified multi-walled carbon nanotubes (HMWCNTs) were used for the removal of vanadium(V) in aqueous solution. The removal rate of vanadium(V) decreased with the increase of the initial vanadium(V) concentration and the solution pH, and increased with the increase of reaction time, HMWCNTs amount and solution temperature. The adsorption equilibrium and dynamic kinetics fitted the Langmuir adsorption isotherm and pseudo-second order models. The results obtained by scanning electron micrography and Fourier transform infrared spectroscopy analysis revealed that the hydroxyl and carboxyl functional groups are mainly responsible for the vanadium adsorption. This study showed that the HMWCNTs proved to be a considerable adsorbent for the removal of vanadium from wastewater.     

Interaction of dissolved atoms and relaxation due to interstitial atoms in hcp metals

The literature data on the mechanism of internal friction maxima induced by O, N, and C in α-Ti, α-Zr, and α-Hf, are contradictory. They do not answer the question which kind of complexes induces relaxation: interstitial atoms or interstitial atoms with substitutional atoms. To clarify this question, modeling of the short-range order and atomic displacement fields around the solute atom clusters was carried out by the Monte-Carlo technique for typical Ti–O–Zr alloys. The energies of strain-induced (elastic) O–O and O–Zr interactions and displacement fields of host atoms around the solute atoms were calculated and used in modelling. The concentration dependence of relaxation strength due to diffusion under stress of oxygen atoms was evaluated using the values of local displacement around the solute atom complexes. It is shown that the developing short-range order cannot be described by the single O–O or O–Zr pair and the associated relaxation, as simple reorientation of any specific atomic pairs. It seems likely that in many cases the internal friction is caused by more complicated clusters constituted by interstitial and substitutional atoms.     

固溶温度对亚稳β钛合金Ti-4Mo-6Cr-3Al-2Sn的组织和拉伸性能的影响

对自主设计的新型亚稳β钛合金Ti-4Mo-6Cr-3Al-2Sn(%,质量分数)在不同温度进行固溶和固溶时效处理,观察其显微组织和测试室温拉伸性能。结果表明：随着固溶温度的提高固溶态组织中的初生α相减少,当固溶温度高于相变点后初生α相完全消失,几乎全部为明显长大的粗大β晶粒。固溶温度为900℃的固溶态合金具有良好的强度和塑性匹配,屈服强度为898.7 MPa、抗拉强度为962.5 MPa、断裂伸长率为12.7%。在不同温度固溶处理的时效态合金,均析出了细小的次生α相。固溶温度低于相变点时,在初生α相间析出的细小次生α相呈60°或者平行交错排列;固溶温度高于相变点时初生α相几乎完全消失,随着固溶温度的提高析出的次生α相片层间距变大并粗化。在所有固溶温度下,时效态组织中沿原始β晶界处均析出了连续的晶界α相,合金的塑性均较差。经过750℃/0.5 h固溶和500℃/4 h时效的合金具有良好的强度和塑性匹配,其抗拉强度为1282 MPa,屈服强度为1210.6 MPa,断裂伸长率为5.3%。     

一类双线性系统受零均值平稳高斯白噪声激励时的FPK解

本文首先在文献[1]的基础上进一步分析研究了具有一般形式对称双线性恢复力的非线性系统受零均值平稳高斯白噪声激励时的FPK解（即位移响应的概率密度函数）；在此基础上，针对一类特殊的双线性系统给出了相应的FPK解。     

薄规格取向硅钢中晶粒取向和尺寸对Goss晶粒异常长大的影响

利用EBSD技术统计了薄规格取向硅钢片中初次再结晶和二次再结晶前期组织中{411}〈148〉、{111}〈112〉、{100}〈025〉取向晶粒尺寸分布,分析了三种不同取向的晶粒对Goss晶粒异常长大的影响。结果表明:初次再结晶组织中不同的取向晶粒对应的平均晶粒尺寸(d)存在差异,{411}〈148〉取向晶粒的平均尺寸最大,其次为{100}〈025〉取向晶粒,{111}〈112〉取向晶粒的平均尺寸最小。Goss取向晶粒异常长大的过程中优先吞噬{111}〈112〉取向晶粒,其次是{411}〈148〉取向晶粒,最后是近{100}〈025〉取向晶粒和近黄铜取向晶粒。{111}〈112〉、{411}〈148〉取向晶粒对Goss取向晶粒异常长大的影响主要体现在二次再结晶的前期。因此,可以推断取向硅钢中最终残留的"岛晶"可能来源于近黄铜取向晶粒或近{100}〈025〉取向晶粒。     

单管供暖系统散热器不热的原因及解决方法

当单管供暖系统部分散热器不热时,首先应排气,接着观察管道是否有堵塞或阀门故障,然后分析系统的定压情况及水压图,最后检查供暖系统设计是否合理,调试是否到位。     

一种新的项目调度解表示方法

基于解集合的准启发式方法是解决资源约束下项目调度问题的有效方法,解的表示形式一直是这种方法的一个重要研究问题。只有充分利用解的形式和目标函数之间的联系,才可能达到在少数枚举下得到尽可能好的解。详细分析了解空间性质,提出了用额外关系表示一个可行解的方法,给出了这种表示方法的理论依据。并介绍了用该方法产生邻域的方法。