椭偏光度法研究钛掺杂对二氧化硅介孔薄膜的光学性能的影响

采用溶胶-凝胶工艺,以表面活性剂十六烷基三甲基溴化铵CTAB为模板剂,在常温常压下制备出介孔SiO2薄膜和钛掺杂介孔SiO2薄膜。用反射式椭圆偏振光谱仪测试出两种薄膜样品的椭偏参数,选用Cauchy模型对椭偏参数进行了较好的数据拟合,获得了在250~700nm波段光学常数的色散关系。紫外-可见-近红外分光光度计测量结果表明小比例钛下薄膜的吸收增强,透过性降低,光学性能发生较大变化。     

铜铟镓铝硒(Cu(InGaAl)Se2)薄膜制备及其光学性能研究

本文采用溶剂热法制备出掺铝的铜铟镓硒Cu(InGaAl)Se₂(简称CIGAS)纳米粉末,并直接将此纳米粉末作为蒸镀材料制备铜铟镓铝硒CIGAS薄膜,再将其放置在装有高纯硒粉的自制密封法兰内在真空下进行硒化和退火处理,从而得到符合化学计量比的铜铟镓铝硒CIGAS薄膜。采用X射线衍射(XRD)和拉曼光谱(Raman)以及扫描电镜(STM)观测和能谱(ED)对样品结构和成分进行测量,确认CIGAS薄膜样品是黄铜矿结构和铜铟镓硒成分。采用椭圆偏振光谱测量术对铜铟镓铝硒CIGAS薄膜进行椭偏光谱测量,进而得出薄膜光学参数如折射率n(λ)、消光系数k(λ)、吸收系数以及薄膜光能隙Eg, 并发现Al元素的掺杂明显增加了薄膜光能隙,并进行了相关物理分析。     

Spectroscopic ellipsometry characterization of amorphous carbon and amorphous, graphitic and fullerene-like carbon nitride thin films

Carbon nitride (CN_x) and amorphous carbon (a-C) thin films are deposited by reactive magnetron sputtering onto silicon (001) wafers under controlled conditions to achieve amorphous, graphitic and fullerene-like microstructures. As-deposited films are analyzed by Spectroscopic Ellipsometry in the UV-VIS-NIR and IR spectral ranges in order to get further insight into the bonding structure of the material. Additional characterization is performed by High Resolution Transmission Electron Microscopy, X-ray Photoelectron Spectroscopy, and Atomic Force Microscopy. Between eight and eleven resonances are observed and modeled in the ellipsometrically determined optical spectra of the films. The largest or the second largest resonance for all films is a feature associated with C-N or C-C modes. This feature is generally associated with sp³ C-N or sp³ C-C bonds, which for the nitrogen-containing films instead should be identified as a three-fold or two-fold sp² hybridization of N, either substituted in a graphite site or in a pyridine-like configuration, respectively. The π→π? electronic transition associated with sp² C bonds in carbon films and with sp² N bonds (as N bonded in pyridine-like manner) in CN_x films is also present, but not as strong. Another feature present in all CN_x films is a resonance associated with nitrile often observed in carbon nitrides. Additional resonances are identified and discussed and moreover, several new, unidentified resonances are observed in the ellipsometric spectra.     

铁基合金中钨元素的看谱分析技术应用研究

使用看谱分析技术对铁基合金中的元素钨进行了测定分析,摄制了相应的彩色图谱,研究了定性和半定量分析方法。研究结果能够满足合金中钨元素定性和半定量分析的需要,达到材料牌号鉴别的目的。     

Spectroscopic Properties of Nd^3＋-Doped Tellurite Glasses

Spectroscopic Properties of Nd~(3 )-Doped Tellurite Glasses     

In-situ spectroscopic ellipsometry of HgCdTe

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.     

PECVD‐based nanocrystalline‐silicon TFT backplanes for large‐sized AMOLED displays

Abstract— A 14.1‐in. AMOLED display using nanocrystalline silicon (nc‐Si) TFTs has been developed. Nanocrystalline silicon was deposited using conventional 13.56‐MHz plasma‐enhanced chemical vapor deposition (PECVD). Detailed thin‐film characterization of nc‐Si films was followed by development of nc‐Si TFTs, which demonstrate a field‐effect mobility of about 0.6–1.0 cm²/V‐sec. The nc‐Si TFTs show no significant shift in threshold voltage when over 700 hours of constant current stress is applied, indicating a stable TFT backplane. The nc‐Si TFTs were successfully integrated into a 14.1‐in. AMOLED display. The display shows no significant current decrease in the driving TFT of the 2T‐1cap circuit because the TFTs are highly stable. In addition to the improved lifetime of AMOLED displays, the development of nc‐Si TFTs using a conventional 13.56‐MHz PECVD system offers considerable cost advantages over other laser and non‐laser polysilicon‐TFT technologies for large‐sized AMOLEDs.     

溅射气压对TbFeCo磁光薄膜的光学常数的影响

利用直流磁控溅射制备了TbFeCo/Si薄膜，采用可变入射角全自动椭圆偏振光谱仪，测量了用磁控溅射法制备的TbFeCo/Si薄膜的光学常数，测量能量范围为1．5～4．5eV。分析了不同氩气压强对磁控溅射制备的TbFeCo/Si磁光薄膜的光学常数的影响。实验结果表明，在低能区域，样品的所有光学常数均随压强增加而增加，受制备工艺影响较大。但在高能区域，光学常数随压强的变化相对说来不再明显．     

Variations of interlayer structure in Cu x S/CdS bilayer thin film with annealing of CdS: an ellipsometric study

Irregularities at the interface in Cu _x S/CdS thin films can be controlled by annealing CdS film prior to chemiplating. The interlayer formed on CdS films annealed at 200°C is comparatively smooth. In CdS films annealed at higher temperatures, the interlayer is rather thick and the CdS intrusions into this layer are thin. An ellipsometric technique is used for this study and the effective medium theory which is utilized to interpret the results is based on the difference in reaction rate in the grains as well as grain boundaries during chemiplating.