蓝色发光GaN纳米晶和晶体的XAFS研究

利用XSAFS（X－射线吸收精细结构）方法研究六方的纳为晶和晶体GaN在78K和300K温度下Ga原子的局域配位环境结构,对于第一近邻Ga－N配位,纳米晶GaN的平均增长R、配位数N、热无序度σT和结构无序度σs与晶体GaN的相近,分别为0．194nm、4．0、0．0052nm、0．0007nm;当温度从78K增加到300K,GaN样品中Ga－N配位的σT增加不多,小于0．0005nm,表明第一近邻Ga－N配位的共价键作用力较强,几乎不受温度和晶体状态的影响。对于第二近邻Ga-Ga配位,R为0．318nm,纳米晶GaN的σs（0．0057NM）比晶体GaN的（0．001nm )大0．0047nm;在78K和300K时,纳米晶GsA样品的Ga-Ga位位的σT分别为0．0053nm和0.0085nm,这一结果表明Ga-Ga配位的σT受温度变化产生很大影响,纳米晶GaN中Ga原子的局域配位环境与晶体GaN的差别主要表现在第二近邻Ga-Ga配位的σs相对较大,可能是由于纳米晶GaN内部缺陷及存在较多的表面不饱和配位原子所致。     

Tc-P共掺杂单层MoS2光电特性的第一性原理计算

采用第一性原理的赝势平面波方法,对比研究了未掺杂和掺杂过渡金属Tc、非金属P及Tc-P共掺杂的单层MoS2的电子结构和光学性质.计算结果表明:掺杂改变了费米面附近的电子结构,使得导带向低能方向偏移,并且带隙由K点转化为Γ点,形成Γ点的直接带隙半导体.掺杂P使带隙值变小,形成p型半导体;掺杂Tc使带隙变宽,形成n型半导体;Tc-P共掺杂,由于p型和n型半导体相互调制,使得单层MoS2转变为性能更优的本征半导体;掺杂使光跃迁强度减小,且向低能方向偏移.     

ECR plasma etch fabrication of C-doped base InGaAs/InP DHBT structures: A comparison of CH4/H2/Ar vs BCl3/N2 plasma etch chemistries

We compare ECR plasma etch fabrication of self-aligned thin emitter carbondoped base InGaAs/InP DHBT structures using either CH₄/H₂/Ar or BCl₃/N₂ etch chemistries. Detrimental hydrogen passivation of the carbon doping in the base region of our structure during CH₄/H₂/Ar dry etching of the emitter region is observed. Initial conductivity is not recovered with annealing up to a temperature of 500°C. This passivation is not due to damage from the dry etching or from the MOMBE growth process, since DHBT structures which are ECR plasma etched in BCl₃/N₂ have the same electrical characteristics as wet etched controls. It is due to hydrogen implantation from the plasma exposure. This is supported with secondary ion mass spectroscopy profiles of structures which are etched in CH₄/D₂/Ar showing an accumulation of deuterium in the C-doped base region.     

光纤传感网络用于机敏复合材料的研究

探索采用一种埋入材料或结构内的结构简单、性能优良的刻纹光纤传感阵列对结构内应变、应力以及外部冲击造成的损伤等状态参数进行实时检测。埋置于教－１１飞机复合材料垂尾内光纤网络的实验显示了该方法的可行性。     

江苏省C3本地电话网组网方式探讨

本文结合江苏Ｃ４本地网的实际情况，说明Ｃ４本地网纳入Ｃ３本地电话网的必要性，例举了４种Ｃ３本地网的组网方式。     

石榴石中Cr^3＋的电子结构与晶场强度的关系

本文对掺铬的GGG(Ca,Mg,Zr),GGG,YGG和YAG四种晶体进行了自旋极化的SCC-DV-X_α计算。首次报道了它们的10Dq计算值,与实验值符合得很好,并讨论了中心离子和配位体之间的距离与该计算值的关系。还计算得到了二重态~2E_3的能量值,从而阐明了YAG_2cr~(3+)只能发射窄带荧光,而GGG(Ca,Mg,Zr):Cr~(3+)能发射强的宽带荧光的机理。     

Antioxidant High-Conductivity Copper Pastes Based on Core–Shell Copper Nanoparticles for Flexible Printed Electronics

As a nontoxic and cost-effective material, copper pastes have attracted great attention in both academia and industry. However, achieving the long-term stability of copper pastes remains challenging due to their susceptibility to oxidation. Therefore, stable copper nanoparticles with a Cu(0)–Cu(I) core–shell structure containing a surface passivation layer of formate ions-involved Cu(I) coordination polymers are developed. Based on the self-reducing nature of the passivation layer, the nanoparticle-based copper pastes can be sintered in <1 min, showing high electrical conductivity (220 000 S cm⁻¹), mechanical flexibility, and long-term stability after sintering. The excellent properties of the developed copper pastes are even comparable with the ones of silver pastes. These stable copper pastes have broad applications in printed electronics (e.g., glucose sensors, RFID tags, and electromagnetic shielding films), showing great potential in the fabrication of flexible printed electronics.     

Light and Strong SiC Networks

The directional freezing of microfiber suspensions is used to assemble highly porous (porosities ranging between 92% and 98%) SiC networks. These networks exhibit a unique hierarchical architecture in which thin layers with honeycomb‐like structure and internal strut length in the order of 1–10 μm in size are aligned with an interlayer spacing ranging between 15 and 50 μm. The resulting structures exhibit strengths (up to 3 MPa) and stiffness (up to 0.3 GPa) that are higher than aerogels of similar density and comparable to other ceramic microlattices fabricated by vapor deposition. Furthermore, this wet processing technique allows the fabrication of large‐size samples that are stable at high temperature, with acoustic impedance that can be manipulated over one order of magnitude (0.03–0.3 MRayl), electrically conductive and with very low thermal conductivity. The approach can be extended to other ceramic materials and opens new opportunities for the fabrication of ultralight structures with unique mechanical and functional properties in practical dimensions.     

多层流延坯片的叠层工艺研究进展

流延坯片的叠层是多层陶瓷技术中最为重要的工艺之一。叠层工艺直接影响到电子器件三维结构(如通道、腔室及隔膜等)的质量。对叠层工艺如热压法叠层及其改进型技术、粘合基叠层、溶剂基叠层等进行综述,并对各种叠层方法的特点、研究进展及应用进行叙述。     

Creating Atomic Ordering in Electrocatalysis

Catalysis always proceeds in a chaotic fashion. Therefore, identifying the working principles of heterogeneous catalysts is a challenging task. Creating atomic order in heterogeneous catalysts simplifies this task and also offers new opportunities for rationally designing active sites to manipulate catalytic performance. The recent rapid advances in heterogeneous electrocatalysis have led to exciting progress in the construction of atomically ordered materials. Here, the latest progress in electrocatalysts with the periodic atomic arrangement, including intermetallic compounds with long-range order and metal atom-array catalysts with short-range order is summarized. The synthesis principles and the intriguing physical and chemical properties of these electrocatalysts are discussed. Furthermore, the compelling prospects of atomically ordered catalysts in the frontier of catalyst research are outlined.