Optoelectronic Method of Noncontacting Reconstruction of the Profile of a Surface of Three Dimensional Objects of Large Dimensions

An optoelectronic method is considered for noncontacting reconstruction of the surface profile of three-dimensional objects of large dimensions. The optimal conditions for performing measurements are identified. It is shown that the proposed method, in contrast to the already known methods, does not require fine tuning of the equipment. A numerical method is given for compensating distortions caused by aberrations. A method is described for reconstructing the surface profile cell by cell which increases the accuracy of measurements.     

基于对比折射法的三维静校正技术及其应用

在地形起伏剧烈、速度和厚度横向变化大的地区，折射静校正技术的应用受到诸多限制，主要表现在不能准确地识别和拾取来自于地下连续地质界面的折射波，使得精确求取的长波长静校正量困难。为此，提出了一种基于对比折射法的三维静校正技术。介绍了这种静校正技术的方法原理和特点，基于对比折射法的折射波至拾取实质上是一个折射层的对比分析解释过程，因此能准确地拾取折射波至，精确地求解低速带的绝对延迟时；然后利用延迟时和近地表速度模型（等效，时深，空变）反演表层模型，最终一次性完成基准面静校正（包含低速带校正和高程校正）。在黄土塬、沙漠以及沙漠和山地的接合部等地区，利用基于对比折射法的三维静校正技术进行静校正处理，使资料的品质得到了明显改善，反射同相轴连续性好，信噪比和分辨率高，构造形态清晰可靠，提高了勘探精度。     

大气状态下AFM阳极氧化加工Si的研究

Si纳米氧化线是构筑基于Si的纳米器件的基础。通过AFM针尖诱导阳极氧化加工的n型Si(100)的实验得到凸出的n型Si(100)氧化物高度和偏置电压成线性关系,与针尖扫描速度成负对数关系,并在前人的基础上深化了AFM针尖诱导氧化加工的机理和理论模型,得到了合适的加工条件为偏压8 V和扫描速度1μm/s。     

BaTiO3基Au纳米颗粒复合薄膜的制备及其光学性质研究

采用溶胶-凝胶（sol-gel）方法，成功的将高体积面分比的Au纳米颗粒复合到BaTiO3的非晶薄膜中，并对其光学性质进行了研究。用XRD、TEM、椭偏仪、吸收光谱、光克尔效应OKE（Optical Kerr Effcet）方法对薄膜进行了表征和测试。从吸收光谱观察到表面等离子体共振SPR（Surface Plasma Resonance)峰随热处理温度升高而红移的现象。光学非线性测试表明薄膜具有高的三阶非线性极化率Χ^(3)和超快的响应时间。     

Effect of Strain Rate on Discontinuous Flow and Mechanical Characteristics of High-Nitrogenous Steel

Experimental study on the effect of strain rate on discontinuous flow and mechanical characteristics of the high-nitrogenous steel Kh23AG19F has been performed. Within the range of strain rates from 4.62 · 10^-5 to 1.85 · 10 ^-4 s^-1, discontinuous flow, reflected by serration on the tensile diagram, is chiefly determined by intergranular deformation mechanisms. Under strain rates over 1.85 · 10^-2 s^-1, combined deformation modes prevail, which cause a change in the character of discontinuous flow and transform a serrated tensile diagram into a wavy graph, with the yield stress of steel increased significantly.     

改性沥青新型磨耗层在高等级路面上的应用

从材料、适用范围、形成机理、经济分析、施工工艺五个方面，介绍了改性沥青新型磨耗层在高等级路面上的应用，并通过试验路的观察表明，改性沥青新型磨耗层具有快速排水、增加摩阻力、愈合原路面微裂缝和较强抗磨耗的功能，是处置高等级路面上常有的龟裂、网裂、脱皮、露骨、抗磨系数不足、渗水等病害较具推广价值的新型施工工艺。     

不同级配对微表处混和料性能的影响

微表处技术是一种性能优良的路面养护技术。首先检验了微表处用原材料的技术指标,在满足规范的要求下选择了三种不同级配,并对三种不同级配的微表处混和料的使用性能进行了比较。     

Effect of select parameters on the properties of edible film from water-soluble fish proteins in surimi wash-water

Edible film from water-soluble fish proteins were developed by casting film solution on leveled trays and effects of pH (9.5, 10.0 and 10.5), heating temperature (60, 70 and 80 °C), and heating time (10, 20 and 30 min) of the film solution on various film properties were determined using Response Surface Methodology (RSM). The impact of pH and heating temperature of film solution was more significant, overall, on the film's properties than heating time. Contour plots of tensile strength and elongation at break was highest at pH of 10.0 at 70 °C (2.75-3.02 MPa) but low in elongation at break (6.35-9.16%), while water vapor permeability and oxygen permeability were at their lowest (58.55-65.96 g mm/m² d kPa and 351.33-624.18 cm³ μm/m² d kPa). There was a direct correlation between the films’ and proteins’ solubility on one hand, and heating temperature of film solution on the other, which reversed with change in pH of film solution. Film color was darker and more yellowish with increase in the pH of film solution.     

化学-电解氧化法制备高铁酸钾的研究

本文用化学－电解氧化法制备高铁酸钾，克服了纯化学氧化法产品需要提纯和纯电解氧化法制备周期长的缺点，得到了高纯度的高铁酸钾晶体。     

新型高K栅介质ZrO2薄膜材料的制备及表征

采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.