In含量对Ge-In-Se薄膜光学特性的影响(英文)

采用磁控溅射法制备了Ge-In-Se硫系薄膜,利用X射线衍射、可见-近红外吸收光谱和Raman光谱分析等技术对Ge-In-Se硫系薄膜的相态、结构和光学特性进行了研究和分析。结果表明:该Ge-In-Se薄膜具有良好的非晶特性。Raman光谱分析表明:[GeSe4]四面体Ge—Se键的高频振动模式是该薄膜的主要振动模式之一,且Ge—Se键的振动强度随着In含量的增加而减小;当In的含量达到13.87%(摩尔分数)时,[GeSe4]四面体消失,而[InSe4]四面体的对称伸缩振动模式成为了主要振动模式。采用Swanepoel方法和经典Tauc方程计算发现:随着In含量增加,该薄膜的短波吸收限红移,折射率逐渐增大,光学带隙逐渐减小。     

退火处理对玻璃表面沉积的ZnO薄膜微观形貌与性能的影响

以Zn(NO3)2·6H2O为前驱体,采用超声喷雾热解法在500℃下、在钠钙硅浮法玻璃衬底上制备了ZnO薄膜.分别在不同温度(500、550、600℃)和不同时间(30、60、120min)对制备的ZnO薄膜进行了退火处理.研究退火条件对ZnO薄膜微观结构、形貌以及光学性能的影响.结果表明:退火处理能提高ZnO薄膜的c轴取向;随着退火时间的延长,ZnO薄膜附着强度随之增加,但c轴取向度呈先增强,至120min时又开始呈下降的趋势;随着退火温度的升高,ZnO薄膜的c轴取向亦出现先显著增强,之后又开始下降的趋势,同时可见光透过率亦呈相同的变化趋势.最佳退火条件为500℃温度保温60min,此时薄膜不仅c轴取向生长优势明显,结晶质量良好,表面颗粒大小均匀,致密平滑,同时薄膜的可见光透过率由退火前的70％提高到90％.     

纺织剪刀用W9Mo3Cr4V钢镀TiN薄膜的表面性能

为改善纺织剪刀用W9Mo3Cr4V高速钢的表面性能,采用多弧离子镀技术对其进行镀TiN表面处理。以X射线衍射和扫描电镜对镀膜进行微观分析。在载荷500kg、加载时间1min的条件下,用摩擦磨损试验机测试了镀TiN薄膜前后W9Mo3Cr4V钢的耐磨性。在3%NaCl溶液中测试了W9Mo3Cr4V钢镀TiN薄膜前后的极化曲线。结果表明,镀TiN能明显提高W9Mo3Cr4V钢的抗磨损性能以及抗腐蚀性能。     

均聚物调控的PS-b-P4VP薄膜的微相分离形貌

分别以聚丙烯酸(PAA)和聚氧化乙烯(PEO)与苯乙烯与4-乙烯基吡啶二嵌段共聚物(PS-b-P4VP)进行溶液共混并且旋涂成膜,采用原子力显微镜(AFM)研究了这两种均聚物对PS-b-P4VP薄膜微相分离形貌的调控作用。结果表明,PAA与P4VP链段之间强烈的氢键作用使得P4VP链段对PS链段的热力学排斥作用增强,当PAA质量分数为10%时,PS分散相区以规则的柱体垂直分布于由P4VP/PAA链段相互溶解所形成的连续相基体中。对于PS-b-P4VP/PEO共混体系,共混薄膜形成了PEO/P4VP分散相以柱状形态垂直分布在以PS链段聚集区为薄膜连续相基体中的微相分离形貌,由于PS链段无法在PEO/P4VP柱状微区上方形成覆盖,导致共混薄膜表面出现许多孔洞,孔洞底部伴有PEO链段部分结晶形成的锥状突起。随PEO含量增加,孔洞直径增大,孔洞底部的锥状突起也增大。     

Fabrication and characterization of planar and channel polymer waveguides. III. Compositional distribution and solute loss in polymer thin films

For many microelectronic and optoelectronic applications, polymer thin films require the addition of small molecules. However, the thin‐film geometry and associated processing techniques will influence the final morphology and compositional distribution of the constituents. It is therefore important that these be examined directly rather than inferred from bulk measurements. As an example system, the concentration and distribution of Disperse Red 1 (DR1) molecules in poly(methyl methacrylate) thin films were examined. Ultraviolet visibility spectroscopy and dynamic secondary ion mass spectrometry indicate that the composition of the molecules decreased dramatically with thermal treatment of the film. The sublimation of the chromophore was observed to occur at temperatures well below the melting point of the small molecule and the glass transition of the pure polymer; this solute loss manifested itself in changes in the glass transition temperature of the film. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 2021–2024, 2002     

形状记忆合金丝加固古塔墙体抗震性能试验研究

针对砖石古塔墙体抗震性能差的问题,提出采用形状记忆合金丝(SMA丝)对古塔墙体进行抗震加固的新技术.为研究其加固效果,对SMA丝进行了力学性能测试,分析应变幅值对其耗能的影响,并通过SMA丝加卸载训练使其保持稳定的完全超弹性状态;通过2片SMA丝加固古塔墙体模型(1片完好墙体和1片损伤墙体)和1片未加固古塔墙体模型的拟...     

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Barium titanate (BaTiO₃) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO₃ thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO₃ film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO₃ thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO₃ film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2P_r) of 5 μC/cm², and coercive field (E_c) of 60 kV/cm.     

Reduction in thermal conductivity of Bi thin films with high-density ordered nanoscopic pores

We prepared two-dimensional Bi thin films with high-density ordered nanoscopic pores by e-beam evaporation of Bi metal. For this structure, we used polystyrene beads ranging from 200 to 750 nm in diameter as an etch mask. The typical hole and neck sizes of the Bi thin films with approximately 50 nm in thickness on SiO₂/Si substrates were in the range of 135 to 490 nm and 65 to 260 nm, respectively. By measuring the thermal characteristics through a 3ω technique, we found that the thermal conductivities of nanoporous Bi thin films are greatly suppressed compared with those of corresponding bulk materials. With a decrease in pore size to approximately 135 nm, the thermal conductivity decreased significantly to approximately 0.46 W/m·K at 300 K.     

耐高温陶瓷绝缘电磁线

本文回顾了陶瓷绝缘电磁线的发展状况,探讨了陶瓷绝缘电磁线选择导体材料的要点,论述了陶瓷绝缘电磁线的分类及主要制备方法,通过对比陶瓷绝缘电磁线与同规格的有机绝缘电磁线的性能,指出陶瓷绝缘电磁线的在耐温,线芯的机械强度都明显优于有机绝缘电磁线,室温下的击穿电压为12.33 V/μm.     

钛酸铅系薄膜的溶胶-凝胶法制备及其应用

简单介绍了钛酸铅系薄膜的制备方法，分析了溶胶-凝胶法较其它方法的优点。探讨了钛酸铅溶胶的稳定因素，如原料、溶剂、添加剂的选取。阐述了热处理温度、时间，退火温度、时间，基片和过渡层对促进钛酸铅系薄膜晶化的影响，并对钛酸铅系薄膜的应用现状进行了概括，展望了钛酸铅系薄膜的发展前景。