Ba（Mg1／3Ta2／3）O3微波陶瓷的损耗研究

本工作用ＸＲＤ，ＥＰＭＡ，ＳＥＭ等测试技术计算和示出了用不同活性粉料制备的Ｂａ（Ｍｇ１／３Ｔａ２／３）Ｏ３微波陶瓷晶格中Ｂ位离子有序度和元素的面分布情况，对它们在Ｘ面下的电行为作了探讨。实验结果表明，ＢＭＴ陶瓷的微波损耗主要与其密度有序度和微观结构的均一度有关。     

变形温度和变形程度对Ti－31合金性能和组织的影响

通过高温和室温拉伸试验，研究了变形温度和变形程度对Ｔｉ－３１合金板材性能和组织的影响。结果表明，合金在７５０～８５０℃的温度下变形５％～２０％空冷后，其室温机械性能均能达到材料的技术指标要求。并发现了材料在９００℃的临界变形区。     

SiGe:GaP合金的微观结构和温差电特性

经高温热处理后的 SiGe∶GaP 半导体温差电材料,其微观结构由具有富 Si 相特征变化成为具有富 Ge 相特征,温差电优值也得到了提高。实验还表明,材料晶格热导率的降低与富 Si 相的消失和富 Ge相的出现有关。然而,塞贝克系数和电导率的显著变化却与微观结构中富 Si 相和富 Ge 相的变化基本无关。通过对材料微观结构和温差电特性比较发现,具有富 Ge 相特征的微观结构对应于较大的温差电优值。     

高温过热器12Cr2MoWVTib（102）钢管的显微组织和相结构分析

本文对原始状态和在火力发电厂使用不同时间的高这热器１０２钢管进行了显微组织和相结构变化规律的探讨和研究。显微组织研究表明，１０２钢管在高温高压下长期运行过程中，使用温度对显微组织和碳化物相有明显影响，而使用时间对其影响不如温度影响强烈。碳化物颗粒图象分析表明，碳化物随着使用时间缓慢长大，而新的碳化物不沉淀，使颗粒总数不断增加，颗粒，间距逐渐缩小。Ｘ射线衍射数据证明，钢管在高温长期使用过程中，ＭＣ相     

Fe－Cu包埋团簇的制备及其微观结构的研究

基于溅射－气体－聚集（ＳＧＡ）形成团簇的原理，提出了蒸发－气体－聚集（ＥＧＡ）共沉积方法，并在方华膜载网上成功地制备了Ｆｅ－Ｃｕ纳米磁性包理团簇样品。ＴＥＭ／ＥＤ分析表明，样品中Ｆｅ团簇被Ｃｕ原子所包裹，形成了以Ｆｅ团簇为芯，Ｃｕ膜为壳的良好的芯－壳式包埋结构。当衬底温度由２５℃变化到２００℃时，样品形貌由弥散状过渡到集团状，直至形成大的块状；其结构也相应的由Ｆｅ－Ｃｕ多晶共存变化为一种不规则的单晶形态。     

无间隙原子钢的微观结构特征和塑性应变比

采用Ｘ射线衍射的ＯＤＦ和ＬＰ分析技术，ＳＥＭ电子通道花样和蚀坑技术观测，研究了超深冲无间隙原子钢板的微观结构特征。结果表明：控制化学成分、保证基体纯净、优选工艺参数，促进强的γ－〈１１１〉∥Ｎ．Ｄ纤维织构的形成是获得优异成型性的关键。用ＣＭＴＰ方法，由ＯＤＦ织构数据从理论计算了塑性应变比（ｒ），表明ｒｍ值高达３．１８。文中讨论了再结晶织构形成机制。     

用于X光激光实验的反射式线聚焦光学系统的设计和分析

基于三维光线追迹的象差计算,对卢瑟福实验室用离轴球面反射线聚焦系统作了分析。然后,首次提出了用于X光激光实验的两类新的反射式线聚焦构型,即反射式光楔列阵和光锥列阵系统,并作了计算。最后,对所得结果作了比较和讨论。     

EFFECT OF HYDROGEN ON THE MICROSTRUCTURE OF SUPER-α2 ALLOY WITH β SOLUTION AND AGEING TREATMENT

借助透射电镜和Ｘ射线衍射仪探讨了氢对Ｓｕｐｅｒ－α２合金β固溶后时效组织的影响，结果表明，氢使时效组织显著细化，使析出相呈细小板条状规则排布，此外，氢还促进Ｂ２相转变为Ｏ相。     

Preparation and Luminescence Spectra of Calcium- and Rare-Earth (R = Eu, Tb, and Pr)-Codoped α-SiAlON Ceramics

Rare-earth-doped oxynitride or nitride compounds have been reported to be luminescent and may then serve as new phosphors with good thermal and chemical stabilities. In this work, we report the photoluminescence (PL) spectra of europium-, terbium-, and praseodymium-doped Ca-α-SiAlON ceramics. The highly dense ceramics were prepared by hot pressing at 1750°C for 1 h under 20 MPa in a nitrogen atmosphere. Europium-doped Ca-α-SiAlON displayed a single broad emission band peaking at λ= 550–590 nm depending on the europium concentration. The emission bands in the spectra of europium-doped Ca-α-SiAlONs were assigned to the allowed transition of Eu²⁺ from the lowest crystal field component of 4 f ⁶5 d to ⁸S_7/2 (4 f ⁷) ground-state level. The emission spectra of terbium- and praseodymium-doped Ca-α-SiAlON ceramics both consisted of several sharp lines, which were attributed to the ⁵D₄→⁷F _j ( j = 3, 4, 5, 6) transitions of Tb³⁺ and ³P₀→³H _j ( j = 3, 4, 5) transitions of Pr³⁺, respectively. In particular, the terbium-doped α-SiAlON ceramics showed a strong green emission among these phosphors.     

Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001) C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature, increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the epilayers when the (SiH₄ + C₂H₄)/H₂ ratio was ≥2.5:3000.