新型光纤连接器端面研磨抛光机的运动分析

设计一种新型的光纤连接器端面研磨抛光装置,建立该机构的运动学方程.从机构的运动角度出发,借助MATLAB语言,对该机构的运动轨迹进行仿真研究,找出影响此种机构的重要参数,总结出主要参数的变化对研磨盘运动的影响.研究结果证明此种研磨机构理论上能够较好地完成光纤连接器端面的研磨.     

Laptop displays performance: Compliance assessment with visual ergonomics requirements

The use of display devices such as smartphones, tablets, laptops is now massive and continuous in everyday life. It, therefore, becomes increasingly important to be aware of the performance of these devices, not only in terms of the tasks to be performed but also in terms of interaction with humans and therefore knows any possible effect on the ergonomics of vision. Following previous research activities conducted by the authors on the assessment of the visual ergonomics at video display terminal workstations, the aim of this study is to evaluate the ergonomics of human-system interaction of laptop displays. In details, a sample of 57 laptop displays is analyzed in accordance with the requirements of the EN ISO 9241-3xx series of international standards related to the display luminance, luminance ratio, contrast non-uniformity. An extensive luminance measurement campaign was carried out using a special pattern that allowed to measure the luminance in 13 different areas of the displays. The results obtained with this activity showed a great luminance variability between different displays. Almost all the displays are able to emit high levels of display luminance, and almost all the displays meet the requirement of contrast non-uniformity. However, several devices did not meet the recommended values of luminance ratio. Furthermore, the authors created a simplified graph to allow a rapid evaluation of the performance of the displays. This method could be periodically used in practice in order to evaluate the residual performance level.     

一种改进的Qtree_ORB算法

在视觉SLAM中,特征点的提取和准确的特征匹配对机器人的位姿推断具有重要作用。针对传统ORB算法特征点分布不均匀,容易出现簇集的问题和Qtree_ORB算法特征点过均匀等问题,提出了一种基于四叉树改进的ORB特征提取算法。对每层图像金字塔进行自适应网格划分,采用自适应阈值来进行特征点提取;根据每层图像金字塔所提取特征点数目对四叉树的划分深度进行限制,减少冗余特征点;设定最小阈值来减少低质量特征点的提取;在Mikolajczyk数据集上对改进算法的均匀度和匹配性能进行测试,在TUM数据集上对改进算法在ORB-SALM2系统中的精度进行测试。结果表明改进算法能够有效提高其均匀度,并且保持着较高的匹配精度;在ORB-SLAM2测试中,改进算法能有效改进SLAM系统的轨迹精度和漂移程度。     

十字挡板型进料分布器性能研究

以空气和水为介质,模拟减压蒸馏塔进料分布器的操作工况,对开发的一种新型十字挡板型进料分布器的气体分布均匀性、雾沫夹带率和过程压降等性能进行试验测定。验证了流体力学软件CFX对十字挡板型进料分布器的结构优化的模拟结果,确定了进料分布器的合理的结构参数。试验证实,十字挡板型进料分布器各项性能优良、结构简单、占用空间小、设计合理,是一种性能良好的进料分布器。     

影响氮化硅陶瓷内圆磨削加工表面形貌因素分析

目的研究氮化硅陶瓷在内圆磨削时不同的磨削参数：砂轮线速度（vs）、径向进给速度（f）、轴向振荡速度（fa）对表面粗糙度的影响.方法采用树脂结合剂金刚石砂轮对氮化硅陶瓷试件进行内圆加工实验,进行了3因素的均匀实验.建立了氮化硅陶瓷内圆磨削的经验公式,利用Taylor-Hobson Surtroni25型接触式粗糙度仪对加工表面进行测量,得到不同磨削参数下的粗糙度;用日立S-4800冷场发射电子显微镜对加工表面进行观测,得到被磨试件的表面形貌图像.结果加工表面粗糙度随砂轮线速度的增大而减小,随径向进给速度的增大而增大,随轴向振荡速度的增大而减小.砂轮线速度对被加工表面粗糙度影响最大,随着砂轮速度的增大,粗糙度由0.340 1μm下降到0.295 0μm.结论明确了内圆磨削氮化硅陶瓷试件时不同磨削参数对表面粗糙度的影响,通过回归分析,探索出了不同线速度下氮化硅陶瓷材料去除机理对其表面形貌产生的影响.     

高频驱动超磁致伸缩致动器的磁场设计与分析

针对超磁致伸缩致动器集中于静态与准静态领域的不足,开发设计出一款用于高频驱动的超磁致伸缩致动器。建立完善用于高精度励磁场的轴线磁场强度、三维空间磁场强度的ANSYS模型,完成励磁场均匀度分析,为高频磁场的设计提供理论基础。     

Top‐emission AMOLED display driven by organic TFTs with semiconductor layer patterned by inkjet process

We have developed an inkjet process for laying down an organic semiconductor layer in organic thin‐film transistors (OTFTs). The organic semiconductor crystallinity was improved by adjusting the contact angles of the bank, the gate insulator, and the source/drain electrodes. The threshold voltage of the OTFT was controlled by means of several surface treatments of the silicon dioxide gate insulator. The OTFTs showed a high mobility of 2.5 cm²/Vs and uniform threshold voltages of ?0.4 ± 0.7 V. We also fabricated a 4‐in., 80‐ppi active‐matrix organic light‐emitting diode on a glass substrate that showed good luminance uniformity and high moving picture quality.     

SHPB测试中岩石试件应力均匀性分析研究

对花岗岩、千枚岩、磁铁石英岩三种岩石进行SHPB应力均匀性试验测试,研究表明:试件内达到应力均匀时间介于弹塑性状态假设条件下试件内达到应力均匀时间之间,且试件内达到应力均匀时间与二者的平均值具有一定的相关性。试验中子弹的冲击速度在一定范围内,能够使三种岩石满足应力均匀性的要求,且在断裂应变达到1%之前均有较长的恒应变率时间段。     

CCD多晶硅离子注入掺杂工艺研究

研究了可取代多晶硅扩散掺杂的离子注入掺杂工艺,通过两种掺杂方式对CCD栅介质损伤、多晶硅接触电阻及均匀性等关键参数影响的对比研究,发现离子注入掺杂制作的多晶硅栅质量优于扩散掺杂制作的多晶硅栅,这有利于CCD输出均匀性的提高.对两种多晶硅掺杂方式的工艺集成条件进行对比,多晶硅掺杂采用离子注入方式其工艺步骤更简单,工艺集成度更高.     

Current Spreading Eff ects in Vertical GaN-Based Light-Emitting Dio de on Si(111) Substrate

The optimal design of GaN-based Light-emitting diode (LED) is important for its reliability. In this work, a new three-Dimensional (3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting GaN-based LED grown on Si(111) substrate with different struc-tures and electrode patterns. It consists of resistance of Transparent conductive layer (TCL), resistance of epitax-ial layer, intrinsic diodes presenting the active layer, and AlN/Si junction as which the multilayer of AlN/Si is as-sumed. Simulations results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED structure. Furthermore, the exper-imentally measured light emission uniformity agrees well with simulation results. The electrical and optical char-acteristics of LED are obviously affected by the current distribution uniformity.