Surveying of Na2O3–BaO–PbO–Nb2O5–SiO2–Al2O3 glass-ceramics system in terms of alpha,proton, neutron and gamma protection features by utilizing GEANT4 simulation codes

In this study, nuclear shielding qualities of glass-ceramics with chemical composition Na₂O₃–BaO–PbO–Nb₂O₅–SiO₂–Al₂O₃ containing different amount of BaO and PbO were investigated. The μ_ρ values were simulated using GEANT4 toolkit at 0.015–20 MeV wide energy range and the obtained results were verified by theoretical WinXCOM results. The variables such as μ_ρ, HVL, MFP, Z_eff, N_eff, EBF and EABF were computed to determine the gamma-ray shielding performances of studied glass ceramics. The results revealed that increase in PBO and BaO percentages in glass samples has caused to decrease the HVL, MFP, EBF and EABF values and increase μ_ρ, Z_eff values. It has been seen that N28 and S24 samples own superior protection ability against gamma radiation. In addition, the shielding capacity of these glass ceramics against charged and uncharged particles were predicted by determination of MSP and PR values for alpha, proton and ΣR values for neutrons. It has been concluded that PbO and BaO addition improve radiation shielding competences of glass ceramics. The data obtained from this study will be beneficial for designing glass ceramics shields for radiation protection enforcements.     

Graphene added multilayer ceramic sandwich (GMCS) composites: Structure,preparation and properties

The multilayer ceramic composites (MLC) consist of two ceramic materials insoluble in each other and sequentially piled in a symmetric manner whereas they can be divided into two groups: multilayer composites with weak interfaces and composites with strong interfaces. The graphene added multilayer ceramic sandwich (GMCS) composite was developed. The multilayer stack of Si₃N₄ with 5 and 30 wt% graphene addition were stratified in sandwich structure. So formed multilayer stacks with 5 and 7 layers were sintered by hot issostatic pressing (HIP). The homogenity of graphene addition, the effect of layered structures and the position of layers with lower and higher graphene content on the final properties were studied.     

（S）-噻吗洛尔半水合物的合成及表征

为了开发β受体阻断剂新药（S）-噻吗洛尔半水合物，采用3-吗啉-4-氯-1，2，5-噻二唑为起始原料，经水解反应得到中间体1（3-吗啉-4-羟基-1，2，5-噻二唑）。中间体1与R-环氧氯丙烷发生醚化反应，经后处理及重结晶得到中间体2 {（R）-4-［4-（环氧乙烷-2-基甲氧基）-1，2，5-噻二唑-3-基］吗啉}。中间体2经胺化反应、马来酸成盐及重结晶得到（S）-马来酸噻吗洛尔。（S）-马来酸噻吗洛尔经游离、纯水转晶得到符合药典标准的（S）-噻吗洛尔半水合物，总收率14.05%且e.e.值为99.66%。最终成品经IR、1H-NMR、13C-NMR、MS、TGA、DSC表征，并优化各步反应条件。结果表明:以三乙胺为醚化反应缚酸剂75 ℃反应最佳；以乙醇为胺化反应溶剂46 ℃反应16 h最佳；S-噻吗洛尔的转晶拆分以水作溶剂，比传统不对称合成工艺安全稳定，操作简单，适合工业化生产。     

一种基于FPGA的可变速率帧结构设计与实现

在简述V.35接口的基础上针对V.35接口速率可变的应用需求提出了一种速率可变的帧结构,该帧结构可支持N×64kb/s(3≤N≤32)速率,从而在V.35接口上实现了多种速率的低速业务传输.     

N-Substituted Nipecotic Acids as (S)-SNAP-5114 Analogues with Modified Lipophilic Domains

Potential mGAT4 inhibitors derived from the lead substance (S)-SNAP-5114 have been synthesized and characterized for their inhibitory potency. Variations from the parent compound included the substitution of one of its aromatic 4-methoxy and 4-methoxyphenyl groups, respectively, with a more polar moiety, including a carboxylic acid, alcohol, nitrile, carboxamide, sulfonamide, aldehyde or ketone function, or amino acid partial structures. Furthermore, it was investigated how the substitution of more than one of the aromatic 4-methoxy groups affects the potency and selectivity of the resulting compounds. Among the synthesized test substances (S)-1-{2-[(4-formylphenyl)bis(4-methoxyphenyl)-methoxy]ethyl}piperidine-3-carboxylic acid, that features a carbaldehyde function in place of one of the aromatic 4-methoxy moieties of (S)-SNAP-5114, was found to have a pIC₅₀ value of 5.89±0.07, hence constituting a slightly more potent mGAT4 inhibitor than the parent substance while showing comparable subtype selectivity.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Formation and wear mechanism of nickel titanium intermetallics during heat treatment of nickel coating on Ti-6Al-4V substrate

In the present work, inter-diffusion of nickel and titanium and formation of Ni-Ti intermetallic compounds on Ti-6Al-4V substrate have been studied. Initially, nickel was electrodeposited on the alloy using a modified Watts bath solution at a current density of 2 A dm^?2 for 1?h. The coated specimens were then heat treated for different durations at 750, 800 and 850 °C under argon atmosphere. The effects of temperature and time on the characteristics, hardness and wear resistance of intermetallic phases were investigated. The results showed that a multilayer structure was formed after heat treatment, an outer layer of residual nickel, an area of intermetallic layers with different compositions followed by a solid solution of Ni-Ti. It was also observed that an increase in time or temperature at first led to the formation of thicker intermetallic layers; however, after passing a critical point, the intermetallic layers seem to dissolve into the substrate. Furthermore, the wear rates of the diffusion treated samples were four times lower compared to Ti-6Al-4V alloy when sliding against AISI 52100 hardened steel.     

Microwave dielectric properties of SrLa[Ga1−x(Mg0.5Ti0.5)x]O4 and SrLa[Ga1−x(Zn0.5Ti0.5)x]O4 (x = 0.2-0.8) ceramics

SrLa[Ga_1−x(R_0.5Ti_0.5)_x]O₄ (R = Mg, Zn) ceramics were prepared by a standard solid state sintering method. The single-phase ceramics with K₂NiF₄-type layered perovskite structure and I4/mmm space group were obtained, indicating that SrLa(R_0.5Ti_0.5) and SrLaGaO₄ can form the unlimited solid solutions. With increasing x for R = Mg and Zn, ε_r increases monotonously, the Qf value first increases and then decreases, while τ_f increases from a negative to a positive value. The optimized microwave dielectric properties were obtained as following: ε_r = 23.3, Qf = 89 400 GHz, τ_f = −0.8 ppm/°C for SrLa[Ga_0.6(Mg_0.5Ti_0.5)_0.4]O₄ and ε_r = 23.3, Qf = 76 200 GHz, τ_f = 0.2 ppm/°C for SrLa[Ga_0.7(Zn_0.5Ti_0.5)_0.3]O₄, indicating that the present solid solution ceramics are the promising candidates as microwave resonator materials for the telecommunication applications.