Oblique projection for source estimation in a competitive environment: Algorithm and statistical analysis

In this paper, we study the problem where the aim is to estimate the source (complex amplitude) parameter of a single signal contaminated by a structured interference (constituted by the other signals) and by a background Gaussian noise. To solve this problem, we propose an estimator based on a partially estimated oblique projection. We derive closed-form expressions of the variance of this estimator and of the Cramér–Rao bound (CRB) associated with the considered model. In particular, we show that the proposed estimator is (i) asymptotically (for large number of sensors) efficient in the sense that its variance meets the CRB for a single signal in noise and (ii) for a small of moderate number of sensors, the variance remains close to the CRB without structured interference for well separated bearings.     

激光斜冲击强化曲轴

激光加工连杆轴颈与曲柄连接处圆角区域曲面时、激光光束不能保证与曲面上每点切线方向始终是垂直的,这个过程就是激光斜冲击强化过程.本文用江苏大学激光技术研究所生产的YAG激光器,斜冲击强化连杆轴颈与曲柄连接处圆角区域.冲击后在受冲击区域显微硬度比未冲击区域提高了65%-75%左右,残余应力比未冲击区域提高了80%-100%左右,使用寿命提高了150%.而这种显微硬度和残余压应力的提高对提高材料的疲劳寿命、抗磨损能力和抗腐蚀能力等表面机械性能都是有益的.激光斜冲击曲轴连杆轴颈与曲柄处圆角,残余应力和显微硬度提高最大处为圆角中心处,而这个位置正是易产生疲劳裂纹处,而圆角边缘处是疲劳强度非敏感区,对裂纹的产生影响不大.     

Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET

The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion implantation (ORI) method. For this purpose, several scenarios of silicon pillar thickness t_si were evaluated for 20–100 nm channel length. The source region was found to merge at pillar thickness below 75 nm, which results in floating body effect and creates isolated region in the middle of pillar. The vertical devices using ORI method show better performance than those with conventional implantation method for all pillar thickness, due to the elimination of corner effect that degrades the gate control. The presence of isolated depletion region in the middle of pillar at floating body increases parasitic effect for higher drain potential. By further reduction of pillar thickness towards fully depleted feature, the increase in gate-to gate charge coupling improves the performance of ORI-based vertical double gate MOSFET, as evident in near-ideal swing value and lower DIBL, compared to the partially depleted and body-tied device.     

Direction-of-arrival estimation for coherent GPS signals based on oblique projection

A new direction-of-arrival (DOA) estimation method for coherent global positioning system (GPS) signals is proposed. It is applicable to the GPS propagation environment with rich multipath, strong interferences and noise. According to the properties of oblique projection, interferences and noise are first suppressed and only the coherent GPS signals are retained by projecting the received signal onto the signal subspace. Then, the coherent GPS signals are resolved by the Toeplitz decorrelation scheme. Using the proposed method, interferences and noise can be suppressed simultaneously, and more accurate DOA estimation for coherent GPS signals can be obtained in GPS propagation environment. Simulation results demonstrate the effectiveness of the proposed method.     

Precise Design of Millimeter Wave Quasi-Optical Faraday Rotators

A method of designing high performance millimeter wave quasi-optical Faraday rotators (QOFR) is reported in this paper. First, the dielectric and magnetic parameters for the ferrite sample are determined by fitting theoretical curves to the measured data. These fitted parameters are then used in a precise numerical model to predict the rotation angle and insertion loss of the QOFR. Finally, the parameters of the QOFR are optimized according to the requirements of devices. Examples are given showing the performance of the QOFR with an isolation better than 20 dB and an insertion loss less than 0.6 dB from 75 GHz to 95 GHz.     

复合材料型超声直线电机的研究

本文提出了一种利用复合材料CFRP(CarbonFiberReinforcedPlastics)的新型超声直线电机。这种电机基于纤维单向排列时CFRP的正交各向异性特点,利用压电振子激励CFRP产生倾斜振动,通过导轨表面的反作用力推动电机移动,结构简单,易于制造。文中阐述了这种电机的结构、工作原理、动力学方程、固有频率计算公式以及电机的特性曲线     

斜激波与物质界面相互作用的数值模拟

利用多介质PPM方法研究了斜激波与物质交界面的相互作用。采用与体积分数耦合的Euler方程组作为计算模型,用双波近似来求解一般刚性气体状态方程Riemann问题,通过体积分数的计算来获得界面的位置,在整个流场采用统一的高阶PPM格式进行计算。文中对斜激波与不同物质界面相互作用进行了数值模拟,并给出了交界面上由于斜压效应产生的涡列的演化过程,特别是强斜激波与不同物质界面的相互作用情况。     

Angular dependence of the sputtering yield from a cylindrical track

The dependence of the sputtering yield on the incident angle, Θ, is determined using molecular dynamics (MD) simulations for a cylindrical track produced by a fast ion. For a ‘small' spike radius and for the mean energy in the track, E_exc, smaller than the binding energy, U, a (cosΘ)^−1.7 dependence is found, close to the linear collision cascade (LCC) result and to some thermal spike models. On the other hand, when E_exc>U, the incident angle dependence is (cosΘ)⁻¹. For a larger spike radius we obtain a (cosΘ)^−1.6 dependence for both high and low energy densities. Analytic spike models based on diffusive transport are shown not to give satisfactory results. In addition, at low energy densities we see correlated atom ejection ignored in analytic models. Applying the MD results to the experimental data for electronic sputtering of solid O₂ at large excitation densities suggests that the effective spike radius is larger than the initial Bohr adiabatic radius indicating that energy is rapidly transported from the initially narrow track.     

Fabrication of TiN nanostructure as a hydrogen peroxide sensor by oblique angle deposition

Nanostructured titanium nitride (TiN) films with varying porosity were prepared by the oblique angle deposition technique (OAD). The porosity of films increases as the deposition angle becomes larger. The film obtained at an incident angle of 85° exhibits the best catalytic activity and sensitivity to hydrogen peroxide (H₂O₂). This could be attributed to its largest contact area with the electrolyte. An effective approach is thus proposed to fabricate TiN nanostructure as H₂O₂ sensor by OAD.