Encapsulation of PV modules using ethylene vinyl acetate copolymer as a pottant: A critical review

The primary purpose of this work is to review the literature about what is and is not known about using ethylene vinyl acetate (EVA0 copolymer as the encapsulant (or pottant) material in photovoltaic (PV) modules. Secondary purposes include elucidating the complexity of the encapsulation problem, providing an overview about encapsulation of PV cells and modules, providing a historical overview of the relevant research and development on EVA, summarizing performance losses reported for PV systems deployed since ca. 1981, and summarizing the general problems of polymer stability in a solar environment. We also provide a critical review of aspects of reported work for cases that we believe are important.Failure modes resolved in the early work to establish reliability of deployed modules and the purposes and properties of pottants, are summarized. Typical performance losses in large field-deployed, large-scale systems ranging from 1% to 10% per year are given quantitatively, and qualitative reports of EVA discoloration are summarized with respect to ultraviolet (UV), world-wide location and site dependence.The general stability of polymers and their desirable bulk properties for solar utilization are given. The stabilization formulation for EVA, its effectiveness, and changes in it during degradation are discussed. The degradation mechanisms for the base resin, e.g., unstabilized Elvax 150^TM, and stabilized EVA are indicated for literature dating to the early 1950s, and the role played by unsaturated chromophores is indicated. The limited number of studies relating discoloration and PV cell efficiency are summarized.Observed degradation of EVA or the unstabilized base resin in the laboratory and examples used to measure the degradation are summarized in sections entitled: (1) thermally-induced degradation; (2) photodegradation and photothermal degradation of EVA in different temperature regimes; (3) photobleaching and photodegradation of the UV absorber and cross-linking agent; (4) acetic acid and metal and metal-oxide catalyzed oxidative degradation; and (5) discolaration and PV cell efficiency losses.Processing effects/influences on EVA stability are discussed in sections entitled: (1) EVA raw materials and extruded, uncured films; (2) thermal encapsulation processes; (3) effects of lamination, curing, and curing peroxide on gel content and chromophores formed; and (4) incomplete shielding of curing-generated chromophores. A summary is given for the limited number of accelerated lifetime testing efforts and examples of erroneous service lifetime predictions for EVA are discussed. The known factors that effect the discoloration rate of several EVA formulations are discussed in which the reduction in rate by using UV-absorbing superstrates is a prime example. A summary is given of what is and is not known about EVA degradation mechanisms, degradation from exposures in field-deployed modeules and/or laboratory testing, and factors that contribute to EVA stability or degradation. Finally, conclusions about using Elvax 150 in EVA formulations are summarized, and future prospects for developing the next-generation pottant for encapsulating PV modules are discussed.     

Importance of the choice of the profile model for ap-n junction in the location of deep levels

The energy levels introduced by Pt in silicon have been measured in a non-abruptp ⁺-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:E _c -E _T = 0.22 eV with acceptor character andE _T -E _v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelE _c -E _T = 0.34 eV was found instead of or besides a donorlike levelE _T -E _v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelE _c −E _T = 0.34 eV located in then-side of the junction.     

Characteristic Anthocyanin Pattern from Onions and other Allium spp

Three red onion (Allium cepa) cultivars, top onion (A. cepa var. vivi-parum), A. altaicum and chive (A. schoenoprasum) contained several or all of the following anthocyanins: 3-(6′-malonyl-3′-glucosylglucoside), 3-(3′,6′-dimalonylglucoside), 3-(6′-malonylglucoside), 3-(3′-malonyl-glucoside), 3-(3′-glucosylglucoside) and 3-glucoside of cyanidin. Trace amounts of two pelargonidin derivatives and the 3,5-diglucosides of cyanidin and peonidin were for the first time reported in red onion. Carbon NMR data showed that the sugars of the 3-(6′-malonyl-3′-glu-cosylglucoside), 3-(6′-malonylglucoside) and 3-glucoside of cyanidin were pyranoses. Substitution either by sugar or acid in the sugar 3-position of an anthocyanin has never been reported outside the genus Allium.     

InAs／InP_（0．7）Sb_（0．3）热电子晶体管的f_T及f_（max）

用电荷控制及热电子弹道运动模型计算ＩｎＡｓ／ＩｎＰ０．７Ｓｂ０．３热电子晶体管的截止频率ｆＴ及最高振荡频率ｆｍａｘ。结果表明，ｆＴ、ｆｍａｘ分别达到２８０ＧＨｚ及６００ＧＨｚ。并指出，通过生长ＧａＳｂ中间层，ＩｎＡｓ／ＩｎＰ０．７Ｓｂ０．３ＨＥＴ可在ＧａＡｓ衬底上实现单片集成。     

钨在铂电极上成核动力学研究

采用循环伏安法和计时电流法研究了钨在ＫＦ－Ｂ２Ｏ３－Ｋ２ＷＯ４（６２－３７－１ｍ／ｏ）熔体中（Ｔ＝７９５℃）铂电极上成核动力学过程。实验结果表明：该过程符合扩散步骤控制的半球形三维晶核连续成核长大的动力学规律。     

真空熔炼高压气体雾化制粉技术及设备

介绍了气体雾化粉的品种、用途及工业化生产。还介绍了真空熔炼-高压气体雾化制粉所需的设备。     

稠油油藏的注汽量预测

利用HCZ预测模型，可对已开发油田的年产量和累计产量进行全程预测，并且在实际应用中取得了较好的预测结果。本文结合稠油田的实际情况，推导出HXZ预测模型在热采中注汽参数的预测公式。结合曙光油田曙1－7－5块的开发数据进行了预测，效果较好。