一种新型的激光—等离子体辅助化学气相沉积装置的研究

为探索用激光离子体共同辅助化学气相沉积过程以实现室温沉积的可能性，设计并制造了一种新型的ＣＶＤ装置，实际了ＳｉＨ４－ＮＨ３－Ｎ２体系制取Ｓｉ３Ｎ４膜的试验。结果表明，激光和等离子体是可以相互促进，共同辅助ＣＶＤ过程的，且两者均处于较代的能量水平。     

Structure factors of modified liquid Al–Si alloys

The structure factor and the coordination numbers of liquid Al–Si alloys with different Si content have been measured by a high temperature X-ray diffractometer. Radial distribution functions (RDFs), the nearest atomic distance and the coordination numbers of eutectic Al–Si alloys before and after being modified with Sr and Sb were studied. The RDFs of the liquid alloy were decomposed by five Gaussian peaks. The results show that a Si–Si covalent bond exists in the liquid of eutectic and hyper-eutectic alloys. Sr in the liquid Al–Si has a capability to weaken the covalent bonds of Si–Si, suppressing the nucleation of the eutectic silicon phase. On the other hand, Sb in the liquid Al–Si increases the order degree of Si atoms, decreasing the supercooling degree of the nucleation and promoting the nucleation of eutectic silicon.     

Annealing process of fine grained co-stabilised (Y,Mg)-PSZ/MgAl2O4 ceramics

Abstract

Co-stabilised (Y,Mg) partially stabilised zirconia (PSZ) ceramics with MgAl₂O₄ spinel additions were produced, with industrial zirconia as the main starting material. Powders were prepared using a mechanical milling–mixing process. The effect of the annealing process on the mechanical properties, phase compositions, and microstructure of fine grained PSZ ceramics was investigated.     

Al4B2O9纳米棒改性制备优异综合性能的固体聚合物电解质

随着储能设备和电力驱动产品的激增,特别是电动汽车的大规模推广应用,全固态电池被认为是最有可能解决电动设备日益严峻的安全问题和高能量密度需求的策略之一.本文报道了一种Al4B2O9纳米棒改性的聚环氧乙烷(PEO)基固体聚合物电解质(ASPE),其具有高离子电导率、宽电化学窗口、良好的机械性能和阻燃性能.具体来说,因为Al...     

反应物量对纳米晶Fe_3Al组织和性能的影响

利用铝热反应熔化方法分别在反应物量为50、100、200g的条件下制备了块体纳米晶Fe3Al材料,通过TEM和XRD研究了材料的晶粒尺寸,并研究了材料室温压缩性能和硬度。结果表明,所制备的材料主要由非晶和纳米晶组织组成,当反应物量增大,部分区域甚至出现微米晶组织。反应物量为50g时Fe3Al材料中非晶较多,不存在微米晶;反应物量为100g时主要以纳米晶为主,非晶数量减少,伴随有少量的微米晶出现;反应物量为200g时,材料以纳米晶为主,微米晶数量较100g时有所增加。随着反应物量的增加,纳米晶相的平均晶粒尺寸增加,屈服强度和硬度呈先增大后减小的趋势。     

广西三水铝土矿矿床地质特征及成因探讨

文章从成矿地质条件,成矿物质来源等方面探讨广西三水铝土矿成因。认为广西三水铝土矿是在碳酸盐岩遭受长期强烈化学风化后形成大量的三水铝矿石和铝质铁、锰质矿石等,并在有利的红土化地形地貌富集形成矿体和矿床。     

SiO2矿化剂对钛酸铝材料结构与性能的影响

以铝型材厂污泥为主原料合成Al2TiO5材料,在合成的Al2TiO5中添加少量SiO2矿化剂,与Al2TiO5形成固溶体,抑制Al2TiO5的分解,达到提高Al2TiO5热稳定性的目的.采用XRD法和SEM法表征各试样的晶相结构和显微结构;用Rietveld Quantification 法确定各试样中各晶相的含量;测试各试样的性能.结构与性能分析结果表明较佳SiO2矿化剂添加量为2%,较佳烧结温度为1450 ℃,对应抗折强度为44.3 MPa,体积密度为3.28 g/cm3,气孔率为6.3%,吸水率为1.9%,热震后抗折强度保持率为84.2%.     

Peptide Assembly of Al/CuO Nanothermite for Enhanced Reactivity of Nanoaluminum Particles

Biological self-assembly procedures, which are generally carried out in an aqueous solution, have been found to be the most promising method for directing the fabrication of diverse nanothermites, including Al/CuO nanothermite. However, the aqueous environment in which Al nanoparticles self-assemble has an impact on their stability. We show that using a peptide to self-assemble Al or CuO nanoparticles considerably improves their durability in phosphate buffer aqueous solution, with Al and CuO nanoparticles remaining intact in aqueous solution for over 2 weeks with minimal changes in the structure. When peptide-assembled Al/CuO nanothermite was compared with a physically mixed sample in phosphate buffer for 30 min, the energy release of the former was higher by 26%. Furthermore, the energy release of peptide-assembled Al/CuO nanocomposite in phosphate buffer showed a 6% reduction by Day 7, while that of the peptide-assembled Al/CuO nanocomposite in ultrapure water was reduced by 75%. Taken together, our study provides an easy method for keeping the thermal activity of Al/CuO nanothermite assembled in aqueous solution.     

阵列波导光栅薄膜的制备及性能

以一种特定成分的有机硅为原料,采用溶胶-凝胶法,在硅基片上制备出用于光波导器件的薄膜.通过折射率和厚度测试及XPS成分测试验证了此薄膜具有较好的均匀性、厚度和光学特性,满足光波导器件的要求.分析了溶胶-凝胶法中常见的龟裂现象的原因以及采预防方法.利用这种薄膜结合微电子加工工艺制备出光波导器件阵列波导光栅.     

Current–voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm²) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.