30Cr2MoV枪管钢碳化物溶解与析出规律

枪管钢重要发展方向是采用二次硬化效应确保高温强度,然而这类钢韧性普遍偏低.为改善韧性,研究了 30Cr2MoV新型二次硬化枪管钢中碳化物溶解与析出规律及其对韧性的影响.采用扫描电子显微镜、透射电子显微镜、碳复型和相分析技术对碳化物进行表征,结果表明:随着淬火温度(850～1050℃)升高,碳化物溶解越多,回火时二次硬化...     

离子注入高温退火对4H-SiC MESFET特性的影响

采用人造刚玉高温炉管对4H-SiC进行1620℃的离子注入后退火.实验测试发现,在刚玉管壁析出的微量铝的作用下,SiC表面与残余的氧成分反应生成衍生物SiOC,造成材料表面粗糙和反应离子刻蚀速率很低.分别采用该种样片和正常样片制作了单栅MESFET,对比测试的欧姆接触和I-V输出特性,评估了高温退火后材料表面对器件的影响.     

GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epitaxial layers grown on 6H-SiC wafers were used as substrates for GaN HVPE growth. The GaN layers exhibit high crystal quality which was determined by x-ray diffraction. The full width at a half maximum (FWHM) for the ω-scan rocking curve for (0002) GaN reflection was ∼120 arcsec. The photoluminescence spectra for these films were dominated by band-edge emission. The FWHM of the edge PL peak at 361 nm was about 5 nm (80K).     

Reactive ion etching of trenches in 6H-SiC

In this paper, we report the reactive ion etching (RIE) of trenches in 6H-silicon carbide using SF₆/O₂. The plasma parameters: etchant composition, gas flow rate, chamber pressure, and radio frequency power were optimized to obtain a maximum etch rate of 360Å/min. The etch rate of SiC was found to exhibit a direct correlation with the dc self bias except when the O₂ percentage was varied. Trenches were fabricated using the optimized conditions. It was found that the trench surface was extremely rough due to the aluminum micromasking effect. To overcome this effect, a Teflon^TM sheet was used to cover the cathode during the experiment. The trenches fabricated using this modification were found to have smooth etched surfaces and sidewalls. The angle of anisotropy of these trenches was approximately 80° which is suitable for device applications.     

Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC

Rapid solid-state microwave annealing was performed for the first time on N⁺-, Al⁺-, and B⁺-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 °C were attained with heating rates exceeding 600 °C/s. An 1,850 °C/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 °C/15 min conventional furnace annealing. For the Al implants, a minimum room-temperature sheet resistance (R _s ) of 7 kΩ/□ was measured upon microwave annealing. For the microwave annealing, Rutherford backscattering (RBS) measurements indicated a better structural quality, and secondary-ion-mass-spectrometry (SIMS) boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing.     

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

Stacking faults within 4H-SiC PiN diodes are known to be detrimental to device operation. Here, we present electroluminescence (EL) images of 4H-SiC PiN diodes providing evidence that electrically and optically stimulated Shockley stacking fault (SSF) propagation is a reversible process at temperatures as low as 210°C. Optical beam induced current (OBIC) images taken following complete optical stressing of a PiN diode and that lead to a small number of completely propagated SSFs provide evidence that such defects propagate across the n–/p+ interface and continue to grow throughout the p+ layer. These observations bring about questions regarding the validity of the currently accepted driving force mechanism for SSF propagation.     

Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide

Ohmic contacts to n-type 4H- and 6H-SiC without postdeposition annealing were achieved using an interlayer of epitaxial InN beneath a layer of Ti. The InN films were grown by reactive dc magnetron sputtering at 450°C, whereas the Ti films were deposited by electron-beam evaporation at room temperature. The InN films were characterized by x-ray diffraction (XRD), secondary electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), and Hall-effect measurements. Both XRD and TEM observations revealed that the Ti and InN films have epitaxial relationships with the 6H-SiC substrate as follows: (0001)[]_Ti∥(0001)[]_InN∥(0001)[]_6H-SiC. The Ti/InN/SiC contacts displayed ohmic behavior, whereas Ti/SiC contacts (without an InN interlayer) were nonohmic. These results suggest that InN reduces the Schottky barrier height at the SiC surface via a small conduction-band offset and support previous reports of an electron accumulation layer at the surface of InN.     

Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization

A chemical vapor deposition (CVD) system was designed and fabricated in our laboratory and SiC homo-epitaxial layers were grown in the CVD process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. The temperature field was generated using numerical modeling. Gas flow rates, temperature field, and the gradients are found to influence the growth rates of the epitaxial layers. Growth rates were found to increase as the temperature increased at high carrier gas flow rate, while at lower carrier gas flow rate, growth rates were observed to decrease as the temperature increased. Based on the equilibrium model, “thermodynamically controlled growth” accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the SD density as well as the conversion of basal plane dislocations (BPDs) into threading edge dislocations (TEDs).     

非晶硅碳（a-SiC∶H）薄膜光学常数的透射谱表征

报道了一种用透射谱数据分析法计算非晶硅碳薄膜的厚度、折射率、吸收系数和光学带隙等光学常数的方法和程序．这一方法引用有效谐振子模型理论的折射率色散关系，所有公式均为解析表达式，便于进行数据处理，无须专用软件，使用Excel即可完成，适用于多种半导体薄膜材料．将这种方法应用于PECVD方法制备的非晶硅碳（a-SiC∶H）薄膜，对其光学特性进行了分析．     

高压 Ti/ 6H- SiC肖特基势垒二极管

在 N型 6 H - Si C外延片上 ,通过热蒸发 ,制作 Ti/ 6 H- Si C肖特基势垒二极管 (SBD) .通过化学气相淀积 ,进行同质外延生长 ,详细测量并分析了肖特基二极管的电学特性 ,该肖特基二极管具有较好的整流特性 .反向击穿电压约为 40 0 V,室温下 ,反向电压 VR=2 0 0 V时 ,反向漏电流 JR 低于 1e- 4 A / cm2 .采用 Ne离子注入形成非晶层 ,作为边缘终端 ,二极管的击穿电压增加到约为 80 0 V.