碳化硼厚板的激光切割工艺及其机制

介绍了碳化硼陶瓷加工中存在的主要问题,将激光技术应用于加工碳化硼陶瓷上,研究出一种新型加工方法,设计出两种有效的激光切割方法并对碳化硼陶瓷进行切割。在实验基础上分析了激光加工参数对加工的影响,采用扫描电镜(SEM)对各种激光切割工艺的断口进行分析和讨论,提出激光加工碳化硼陶瓷的自行断裂机制。实验结果表明,在特定的功率下激光能够用来加工碳化硼陶瓷厚板。对于厚度为5.5 mm碳化硼陶瓷板,Nd∶YAG激光平均功率为130 W时,激光束沿同一位置重复走刀两次即可切断,最高切割速度可达到120 mm/min,可以做到无微裂纹切割。     

Four-point probe characterization of 4H silicon carbide

We report on four-point probe measurements on SiC wafers as such measurements give erratic data. Current-voltage measurements on n-type SiC wafers doped to 3 × 10¹⁸ cm⁻³ are non-linear and single probe I-V measurements are symmetrical for positive and negative voltages. For comparison, similar measurements of p-type Si doped to 5 × 10¹⁴ cm⁻³ gave linear I-V, well-defined sheet resistance and the single probe I-V curves were asymmetrical indicating typical Schottky diode behavior. We believe that the reason for the non-linearity in four-point probe measurements on SiC is the high contact resistance. Calculations predict the contact resistance of SiC to be approximately 10¹² Ω which is of the order of the input resistance of the voltmeter in our four-point probe measurements. There was almost no change in two-probe I-V curves when the spacing between the probes was changed from 1 mm to 2 cm, further supporting the idea that the I-V characteristics are dominated by the contact resistance.     

一种镍基单晶高温合金中碳化物热稳定性研究

利用SEM、TEM研究了一种镍基单晶高温合金中碳化物在950℃时效不同时间的退化规律。固溶处理过程中形成的MC碳化物随时效时间的增加而逐渐退化为M6 C和M23 C6碳化物。同时,由于在时效处理过程中Re元素进入M6 C碳化物中,破坏了其结构稳定性,促使M6 C碳化物也可以退化为M23 C6碳化物。至时效3000 h时,没有观察到碳化物退化的逆反应。本研究可以为高温合金高温下服役的稳定性提供实验参考。     

Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization

A chemical vapor deposition (CVD) system was designed and fabricated in our laboratory and SiC homo-epitaxial layers were grown in the CVD process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. The temperature field was generated using numerical modeling. Gas flow rates, temperature field, and the gradients are found to influence the growth rates of the epitaxial layers. Growth rates were found to increase as the temperature increased at high carrier gas flow rate, while at lower carrier gas flow rate, growth rates were observed to decrease as the temperature increased. Based on the equilibrium model, “thermodynamically controlled growth” accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the SD density as well as the conversion of basal plane dislocations (BPDs) into threading edge dislocations (TEDs).     

高纯半绝缘SiC电阻率影响因素

采用物理气相传输(PVT)法进行高纯半绝缘SiC晶体生长,利用高温真空解吸附以及在系统中通入HCl和H2的方法,有效降低了系统中N、B和Al等杂质的背景浓度。使用二次离子质谱(SIMS)对晶体中杂质浓度测试,N、B和Al浓度分别小于1×1016、1×1015和2×1014 cm-3。对加工得到的晶片进行测试,全片的电阻率均在1×1010Ω·cm以上,微管密度小于0.02 cm-2,(004)衍射面的X射线摇摆曲线半高宽为34″。结果表明,该方法可以有效降低SiC晶体中N、B和Al等杂质浓度,提升SiC晶片的电阻率。使用该方法成功制备了4英寸(1英寸=2.54 cm)高纯半绝缘4H-SiC晶体。     

A Vapor–Liquid–Solid Mechanism for Growing 3C‐SiC Single‐Domain Layers on 6H‐SiC(0001)

Growing device‐quality 3C‐SiC monocrystalline material is still an issue despite two decades of work dedicated to the subject. Using silicon as the substrate generates too many defects in the layers, owing to lattice mismatch, while it is very difficult to control the initial nucleation on an α‐SiC substrate so that 60° rotated domains are randomly formed. Herein, the elaboration of mono‐orientated 3C‐SiC layers on a 6H‐SiC(0001) on‐axis, Si face substrate using a vapor–liquid–solid mechanism is reported. This non‐conventional approach for growing monocrystalline layers involves feeding a Ge–Si melt by a propane flux at a temperature ranging from 1250 to 1550 °C. We show that, by using this technique, the 3C‐SiC material is almost always obtained on an hexagonal substrate, even if the crystal seed is oriented 8° off‐axis. Using on‐axis 6H‐SiC seeds and optimal growth conditions results in the reproducible deposition of single‐domain 3C‐SiC layers. A mechanism is proposed to clarify some aspects of this process.     

碳化硼五次孪晶纳米线的结构弛豫现象研究

通过透射电子显微学方法研究纳米材料内部结构有助于理解界面与缺陷对纳米材料性能的影响。在碳化硼五次孪晶纳米线体系中,为了缓解5°角度过剩引起的五次孪晶轴心区域的弹性应变能,在纳米线内部会产生一些结构缺陷。本文通过系列电子衍射分析结合暗场成像技术揭示了碳化硼五次循环孪晶纳米线中的一种结构弛豫模式。孪晶轴向纳米线边缘偏移从而导致其中2片单晶结构单元的缺失,形成仅具有3个单晶结构单元的非完整循环孪晶结构。统计分析发现此类结构弛豫现象少量存在于1100℃固相烧结合成的碳化硼五次孪晶纳米线中,从能量角度定性分析表明这可能与该结构弛豫发生过程中会产生具有较高能量的界面及表面有关。     

碳化硅金刚线切割表面粗糙度的研究

碳化硅是新兴的第三代半导体材料。用固定磨料金刚线切割机对其进行切割加工,分析了加工过程的各项参数对晶片表面粗糙度的影响,为优化碳化硅金刚线切割过程提出依据。     

钛合金深孔钻削刀具的试验研究

以钛合金深孔钻削刀具为研究对象,针对钛合金材料的难加工特性,选择了几种常用的硬质合金刀片材料,并优化选择不同的刀片几何参数,进行了深孔钻削试验。通过分析试验结果,确定出适合加工钛合金材料的深孔钻用刀片材料为YT726,其磨损特性优于其他刀片材料,钻削47.4mm钛合金深孔时,比较合理的刀片几何参数为前角γo=7°、后角αo=12°、余偏角ψr=15°、钻头偏心量e=3.8mm。