Application of optical transmission interferometry for in-situ structural investigations of titanium dioxide sputter-deposited coatings

Titanium dioxide coatings (from 0.1 to 1.5 μm thick) have been dc sputter-deposited on glass slides from titanium targets in various Ar-O₂ reactive gas mixtures. Deposition rate and optical properties were controlled in-situ by optical transmission interferometry (OTI) with an optical fibre located behind the glass substrate in order to perform a real-time control of transmittance of the growing film. Thus, it is possible to determine in-situ the optical indices (n, k) and the thickness of the as-deposited film by using a simple simulation, developed on Matlab software. The optical properties of the films were investigated in relation to their structure, which depends on the sputtering conditions adopted. In particular, the effects of the sputtering pressure (working pressure and oxygen partial pressure), the discharge power and the substrate location into the reactor are investigated in detail. Films structure is assessed by standard grazing incidence X-ray diffraction (XRD).     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.     

反应溅射制备AlN薄膜中沉积速率的研究

通过对浅射过程中辉光放电现象及薄膜沉积速率的研究，发现随着氮浓度的增大，靶面上形成一层不稳定的AlN层，由于AlN的溅射速率远小于Al，从而使薄膜的沉积速率显著下降。同时还研究了其它溅射参数对薄膜沉积速率的影响。结果表明：随靶基距的增大靶功率的减小，不同程度引起沉积速率的下降；随着溅射气压的增大，最初沉积速率不断增大，当溅射气压增大到一定程度时，沉积速率达到最大值，之后随溅射气 压的增大，又不断减小。     

Deformation and failure mechanism of nano-composite coatings under nano-indentation

Two nano-composite coatings based on nc-TiC particles in an a-C:H matrix are deposited via closed-field unbalanced reactive magnetron sputtering. The compositions of the coatings are varied by changing the acetylene gas flow during the depositions. A Cr/Cr–Ti/Ti–TiC graded interlayer is introduced between substrate and coating. Electron probe micro-analyses (EPMA) show that the Ti content of the coatings varies between 31.7 and 11.5 at.%. The coatings exhibit a hardness (H) of 20.0 and 15.7 GPa, and a Young's modulus (E) of 229.4 and 136.6 GPa, respectively, as measured through nano-indentations. Cube corner indentations are performed to probe the fracture toughness of the coatings through the determination of critical indentation loads (L_r) at which radial cracks start to propagate. Transmission electron microscopy (TEM) observations and energy-filtered TEM are employed to characterize the coatings nanostructures. The variation in Ti content is accompanied by a variation in TiC particle size and volumetric fraction, as well as a change in the columnar structure of the coatings. A focus ion beam (FIB) slicing technique is employed to prepare samples from nano-indented locations of coated Silicon and stainless steel (SS) substrates. TEM inspection of the FIB sliced samples determines that the most brittle phase in the coating is the C-enriched columnar boundary, and identifies the location of failure within the interlayer. As a consequence of the different nanostructure, the coatings exhibit different elastic recovery properties and toughness.     

高透明低发射率ITO薄膜的制备及其光电性能研究

目的研究磁控溅射工艺对ITO薄膜光电性能的影响,为制备高性能ITO薄膜提供数据和理论支撑。方法采用磁控溅射在PET基材上制备ITO薄膜,利用扫描电镜、X射线衍射仪、分光光度计、四探针、红外发射率测仪、Hall效应测试系统等,分析工艺参数对ITO薄膜光电性能的影响。结果随着氧气流量的增加,ITO薄膜在可见光区的透过率先增加,然后变缓,薄膜方块电阻先降低后升高;随着工作气压的增加,ITO薄膜的可见光透过率增加,薄膜方块电阻先下降后上升,电阻率先变小再增大,载流子浓度先增大后减小,红外发射率先减小后增大,晶体结构逐渐由晶态转变为非晶态;随着氩氧比的降低,薄膜红外发射率先降低,然后缓慢升高;随溅射时间的增加,薄膜的厚度逐渐增大,方块电阻、红外发射率和可见光透过率迅速下降,晶体结构逐渐由非晶结构转变为晶体结构。综合对比研究发现,当氧气流量为0.6 mL/min、工作气压为0.4 Pa、氩氧比为19.8∶0.2、溅射时间为80 min时,可获得综合性能优异的ITO薄膜,其可见光透过率大于80%,在8～14μm红外波段的辐射率小于0.2。结论磁控溅射工艺参数是决定薄膜综合质量的重要因素,通过严格控制工艺参数,可获得透明性高、发射率低的ITO薄膜。     

Microstructure and Application of YBCO Superconductive Films with Low Surface Resistance

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磁控溅射制备纳米Ni-Ti薄膜工艺研究

为了得到高质量的纳米薄膜，对直流磁控溅射法制备Ni-Ti薄膜工艺进行了研究。采用单晶硅和玻璃两种基体材料，并在不同的基体温度、晶化温度、溅射功率等条件下制备薄膜。之后对薄膜进行了XRD，SEM分析。分析结果表明：薄膜成分、厚度、表面形貌、致密度与溅射功率、基体温度、晶化温度、基体材料密切相关。并根据实验结果给出优化的纳米Ni-Ti薄膜制备工艺。     

掺杂Ti对Fe－N薄膜结构与磁性的影响

用对向靶溅射仪制备出含多量Ｆｅ（１６）Ｎ２相的（Ｆｅ，Ｔｉ）－Ｎ薄膜，研究了掺杂Ｔｉ对Ｆｅ－Ｎ薄膜结构与磁性的影响，在溅射Ｆｅ－Ｎ薄膜时加入适量的Ｔｉ可提高Ｆｅ－Ｎ薄膜中Ｆｅ（１６）Ｎ２相的含量．Ｔｉ含量（原子分数）在０—２５％时薄膜饱和磁化强度均高于纯Ｆｅ的值；Ｔｉ浓度为１０％时，薄膜磁化强度高达２．６８Ｔ，比纯Ｆｅ的饱和磁化强度值高２０％．     

反应溅射非晶态氧化铝薄膜SCIEI

研究了平面磁控直流反应溅射法沉积氧化铝薄膜的过程。结果表明氧分压大小对反应溅射过程有决定性作用,当氧分压增大或减小过程中存在两个阈值。氧分压小于阈值为金属Al溅射区,大于阈值为氧化铝溅射区。在阈值附近总气压、溅射电压和沉积速率发生突变,溅射特性(V-J)曲线有不同规律。沉积的氧化铝膜为非晶态,高温下可晶化,本文还讨论了反应溅射的机理。     

Structural investigation of thin films of Ti1−xAlxN ternary nitrides using Ti K-edge X-ray absorption fine structure

Thin films of Ti_1−xAl_xN nitrides were prepared over a large range of composition (0 ≤ x < 1) on Si substrates using nitrogen reactive magnetron sputtering from composite metallic targets. Ti K-edge X-ray Absorption Spectroscopy experiments were carried for a better understanding of the local structure. The evolution of the intensity of Ti K-edge pre-edge peak gives evidence of the incorporation of Ti in hexagonal lattice of AlN for Al-rich films and in cubic lattice of TiN for Ti-rich films. An attempt to determine their atomic structure by combining X-ray diffraction and Ti K-edge Extended X-ray Absorption Fine Structure is presented. The evolution of the nearest neighbour and next-nearest neighbour distances depending on the composition is presented and discussed together the cubic and hexagonal lattice parameters. A possible contribution of amorphous nitrides is suggested.