磁控反应溅射直接生长绒面H化Ga掺杂ZnO-TCO薄膜及其特性研究

采用直流磁控溅射技术,在玻璃衬底上直接生长出了具有绒面结构的H化Ga掺杂ZnO(HGZO)薄膜。研究了H2流量对薄膜结构、表面形貌及光电特性的影响。实验表明,在溅射过程中引入H2明显改善HGZO薄膜电学性能,并且能够直接获得具有绒面结构的薄膜。在H2流量为2.0sccm时,所制备的HGZO薄膜具有特征尺寸约200nm的类金字塔状表面形貌,同时薄膜方阻为4.8Ω,电阻率达到8.77×10-4Ω.cm。H2的引入可以明显改善薄膜短波区域的光学透过,生长获得的HGZO薄膜可见光区域平均透过率优于85%,近红外区域波长到1 100nm时仍可达80%。为了进一步提高薄膜光散射能力和光学透过率,根据不同H2流量下HGZO薄膜性能的优点,提出了梯度H2技术生长HGZO薄膜;采用梯度H2工艺生长获得的HGZO薄膜长波区域透过率有了一定的提高,薄膜具有弹坑状表面形貌,并且其光散射能力有了明显提高。     

直流磁控溅射ITO薄膜的正交试验分析

利用直流磁控溅射系统制备ITO薄膜,采用正交试验表格L32(48)安排试验.测试了薄膜的方阻和透过率,分析了8个工艺参数对薄膜电光特性的影响,其中沉积气压、氩氧流量比和退火温度的影响最大.分析得到优化工艺参数为:沉积气压2×133.322 4 mPa、氩氧流量比16∶0.5、退火温度427 ℃、靶基间距15、退火时间1 h、溅射功率300 W、退火氛围为真空、沉积温度227 ℃.在此工艺参数下制备的ITO薄膜方阻为17 Ω/□,电阻率为1.87×10-4Ω·cm,在可见光区域平均透过率为85.13%.     

氧流量对TiO_2薄膜光电性质的影响

采用直流反应磁控溅射法在FTO基底上制备了TiO2薄膜,研究了在不同氧流量条件下TiO2薄膜的拉曼光谱、表面形貌和透射光谱,并将TiO2薄膜用N719染料进行敏化,制备了染料敏化太阳电池,测试了电池的I-V特性曲线。实验结果表明:随着氧流量的增加,电池的短路电流和光电转换效率先增加而后降低,在15cm3时达到最大;薄膜为锐钛矿和金红石的混合晶体结构;氧流量对薄膜的表面形貌影响不大,薄膜都表现出疏松多孔的表面结构。     

Au点阵模板控制生长ZnO堆垒单晶棒

采用磁控溅射技术在Si(111)衬底上溅射Au薄膜,900℃退火生成Au点阵模板,在Au点阵模板上溅射ZnO薄膜,O2气氛下1 000℃退火制备了ZnO堆垒单晶棒。研究了不同直径Au点阵模板对ZnO单晶棒结构性能的影响。采用扫描电镜(SEM)、高分辨透射电子显微镜(HRTEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)对样品结构形貌进行了分析。结果表明,生成有序排列的ZnO棒均由诸多六方纤锌矿单晶堆垒而成,较小Au点阵生成单晶棒的直径约为100nm。室温光致发光PL谱表明在376nm出现一个较强近紫外发射,在488nm附近出现一个较宽的深能级绿光发射,说明所制备样品具有良好的发光特性。     

玻璃基LSCO/PZT/LSCO电容器的制备和铁电性能

采用磁控溅射法制备La0.5Sr0.5CoO3(LSCO)薄膜、sol-gel法制备Pb(Zr0.4Ti0.6)O3(PZT)薄膜,在玻璃和Ti-Al/Si衬底上构架了LSCO/PZT/LSCO电容器,研究了衬底对LSCO/PZT/LSCO电容器结构和铁电性能的影响。研究发现:虽然生长在两种衬底上的PZT薄膜均为钙钛矿结构多晶薄膜,但是,生长在玻璃衬底上的LSCO/PZT/LSCO电容器具有更好的铁电性能。玻璃基LSCO/PZT/LSCO电容器的剩余极化强度(Pr)为28×10–6C/cm2,矫顽电压(Vc)为0.96V;而硅基LSCO/PZT/LSCO电容器的Pr为25×10–6C/cm2,Vc为1.05V。     

MgO缓冲层对Si衬底上制备Fe3Si薄膜性能的影响

采用磁控溅射方法和热加工工艺在n型Si衬底上溅射不同厚度的MgO层并制备Fe-Si薄膜层,退火后形成Fe3Si/MgO/Si多层膜结构.利用MgO缓冲层对退火时Si衬底扩散原子进行屏蔽,并分析MgO层对Fe3Si薄膜结构和电学性质的影响.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和四探针测试仪对Fe3Si薄膜的晶体结构、表面形貌、断面形貌和电阻率进行表征与分析.研究结果表明:当MgO层厚度为20 nm时生成Fe0.9Si0.1薄膜,当厚度为50,100,150和200 nm时都生成了Fe3Si薄膜,生成的Fe3Si和Fe0.9Si0.1薄膜以(110)和(211)取向为主.随MgO缓冲层厚度增加,Si衬底扩散原子对Fe3Si薄膜的影响减小,Fe3 Si薄膜的晶格常数逐渐减小,晶粒大小趋向均匀,平均电阻率呈现先增大后减小趋势.研究结果为后续基于Fe3 Si薄膜的器件设计与制备提供了参考.     

MmM5／Mg复合薄膜的显微结构与储氢性能的关系

本文用X—ray衍射（XRD）方法研究了磁控溅射制备的MmNi3.5（CoAlMn）1.5／Mg（简写为Mg／MmM5）复合薄膜吸放氢前后的结构变化与储氢性能间的关系。XRD表明Mg／MmM,多层膜中Mg层的储氢性能有一定程度的改善,吸,放氢温度分别为473K和523K。用透射电镜（TEM）分析方法研究了Mg／MmM5多层薄膜的微观结构,Mg／MmM5多层膜中Mg层和MmM5层的结构与衬底的性质有密切关系。Mg层由纳米晶和沿垂直于衬底表面的[001]方向生长的柱状晶组成;MmM5层则由纳米晶和非晶组成。Mg／MmM5多层膜在吸氢过程中表现为（103）面平行于衬底生长的柱状晶先吸氢,然后是（001）面生长的柱状晶再吸氢。     

Low Fatigue in Epitaxial Pb(Zr<Subscript>0.2</Subscript>Ti<Subscript>0.8</Subscript>)O<Subscript>3</Subscript> on Si Substrates with LaNiO<Subscript>3</Subscript> Electrodes by RF Sputtering

Epitaxial PZT (001) thin films with a LaNiO₃ bottom electrode were deposited by radio-frequency (RF) sputtering onto Si(001) single-crystal substrates with SrTiO₃/TiN buffer layers. Pb(Zr_0.2Ti_0.8)O₃ (PZT) samples were shown to consist of a single perovskite phase and to have an (001) orientation. The orientation relationship was determined to be PZT(001)[110]∥LaNiO₃(001)[110]∥SrTiO₃ (001)[110]∥TiN(001)[110]∥Si(001)[110]. Atomic force microscope (AFM) measurements showed the PZT films to have smooth surfaces with a roughness of 1.15 nm. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). Electrical measurements were conducted using both Pt and LaNiO₃ as top electrodes. The measured remanent polarization P _r and coercive field E _c of the PZT thin film with Pt top electrodes were 23 μC/cm² and 75 kV/cm, and were 25 μC/cm² and 60 kV/cm for the PZT film with LaNiO₃ top electrodes. No obvious fatigue after 10¹⁰ switching cycles indicated good electrical endurance of the PZT films using LaNiO₃ electrodes, compared with the PZT film with Pt top electrodes showing a significant polarization loss after 10⁸ cycles. These PZT films with LaNiO₃ electrodes could be potential recording media for probe-based high-density data storage.     

Enhancement of Cu nucleation in Cu-MOCVD by Pd sputtering pretreatment

Cu electroplating which emerges as a viable Cu filling technique for damascene processing relies on the presence of a smooth and continuous Cu seed layer. Metal organic chemical vapor deposition (MOCVD) may be the most promising technique to deposit the Cu seed layer. Plasma pretreatment is widely used as a precleaning technique which is essential for the enhancement of Cu nucleation in Cu-MOCVD. New pretreatment techniques which can replace plasma pretreatments are proposed in this paper. Pd sputtering, Pd–HF dipping or Pd-CVD pretreatment will possibly enhance Cu nucleation significantly if it is conducted on barrier metal films prior to Cu-MOCVD. It was found that Pd sputtering is more effective in enhancing Cu nucleation than direct plasma H₂ precleaning. Pd sputtering pretreatment is effective for a variety of barrier metals including Ta, TiN, TaN and TaSiN. The mechanism through which Cu nucleation is enhanced may be as follows: a thin Pd buffer layer formed by sputtering shields the barrier metal substrate surface with adsorbed oxygen atoms making Cu nucleation difficult and provides preferred sites for Cu nucleation.     

射频磁控溅射ZnO薄膜的微结构与光学特性

研究了膜厚对ZnO薄膜微结构和光学性能的影响。采用射频磁控溅射法在单晶硅(111)和玻璃基片上制备了不同厚度的ZnO薄膜。通过X射线衍射、原子力显微镜和紫外可见光谱对薄膜进行了表征。结果表明薄膜结晶性能良好,在(002)晶面具有明显的c轴取向。随着薄膜厚度的增加,透射率下降,吸收边红移,禁带宽度逐渐减小。