自蒸发器材质检验及裂纹成因分析

采用化学成分分析、力学性能试验、宏微观检验等方法对自蒸发器材质和裂纹成因进行了分析。结果表明,碱脆是导致自蒸发器产生裂纹的主要原因。     

煤矸石基混凝土在井下巷道硬化工程中的应用试验

煤矸石是我国目前排放量较大的固体废弃物之一,利用煤矸石部分或全部代替混凝土粗骨料生产煤矸石基混凝土是其高效利用的途径。通过实验室开展不同煤矸石粗骨料替代率、水胶比、添加剂等条件下的煤矸石基混凝土的抗压强度试验,探究煤矸石基混凝土的基本力学性能,确定煤矸石基混凝土的最佳配合比。研究结果表明：煤矸石基混凝土抗压强度随着煤矸石粗骨料替代率的增大而减小;在胶凝材料中加入质量比为5%的硅灰、0.3%的减水剂有助于迅速提高煤矸石基混凝土的前期强度。在山西李村煤矿二采区胶带巷5^#辅运联巷开展了煤矸石基混凝土的井下硬化试验,验证了煤矸石基混凝土在井下硬化工程中的良好效果。     

Material flow and core/multi-shell structures in a friction stir welded aluminum alloy with embedded copper markers

The objective of this study was to reveal the material flow and temperature distribution in a thick aluminum plate during friction stir welding and examine the subsequent microstructural change with particular attention to the reaction between copper marker and aluminum matrix. It is shown that the material adjacent to the threaded pin was transported from the top to bottom non-symmetrically, and then was forced to move upwards at a small distance from the pin due to the constraint of an extrusion-die-like configuration. The interaction between the copper marker and aluminum matrix led to the formation of (i) a unique core/multi-shell microstructure consisting of copper core, inner shell of AlCu and outer shell of Al₂Cu, and (ii) a composite band containing uniformly-distributed Al₂Cu particles with refined grains due to the lower stacking fault energy of copper and the pinning role of Al₂Cu particles.     

Cu取代Zn对NiCuZn铁氧体磁性能和介电性能的影响

用传统的陶瓷工艺合成Ni0.15Cu0.2+0.02xZn0.65-0.02xFe2O4(x=-2,0,2,4)铁氧体。发现Cu取代Zn对样品的微观结构、居里温度、磁性能和介电性能都有很大的影响。磁导率随x的增大先增大后减小,在x=2时取得最大值。但品质因数始终随x的增大而增大。与此同时,居里温度随x的增大而增高。随着x的增大,介电常数增大;而介电损耗先减小后增大,当x=2时取得最小值。实验结果表明,在x=2时,能制备出高性能的NiCuZn铁氧体材料。     

应用于暂时粘结、基片保护和MOEMS封装的新型材料

随着微电子制造商持续缩小晶体管基极和其他元件的尺寸,集成电路的密度不断增大,电路连接工艺中开始使用低k介电质和铜导电体。为了进一步提高电路整体性能与射电频率性能、缩小体积、降低电源损耗、提高散热效率,承载电路的基片的厚度正在持续变薄。常规的工艺已经无法加工先进的超薄基片。为了解决这个工艺中的难题,BrewerScience利用自己先进的材料、工艺、机械设备的研究开发水平,正在开发一套崭新的超薄基片的加工操作流程。介绍用于将超薄基片暂时粘结到另一载体的系列材料和流程,完成加工以后,基片和载体可以很容易地分离。另外,对用于保护基片的新型涂料也进行了介绍。在对基片进行薄化和切割的时候,这种涂料可以对基片提供有效的保护。最后,介绍了高透明高折射材料,这些材料用在高亮度发光二极管(HB-LED)和微光电机械系统(MOEMS)中,可以降低由封装引起的光损耗。     

Comparison of dicarboxylic acids as complexing agents for abrasive-free chemical mechanical planarization of copper

Abrasive particles used in chemical mechanical planarization (CMP) of copper often agglomerate and cause scratches on the finished surface. Abrasive-free CMP offers a feasible solution to this problem, and our present work examines four dicarboxylic acids (oxalic, malonic, succinic and glutaric, with increasing carbon chain lengths) as possible complexing agents for such a chemically dominated CMP process. At pH 3.0-4.0, oxalic and malonic acids are most effective for abrasive-free Cu removal. The rates of Cu dissolution and polish (with or without abrasives) are correlated with pH dependent distributions of mono-anionic (for oxalic and malonic) and neutral (for succinic and glutaric) acid species. The surface morphologies of a Cu wafers obtained by abrasive-free CMP in these acids also are more defect free and flat compared to those obtained using abrasives.     

Role of dual SiOx: H based buffer at the p/i interface on the performance of single junction microcrystalline solar cells

In p-i-n structure a-Si solar cell a buffer layer with proper characteristics plays important role in improving the p/i interface of the cell, reducing mismatch of band gaps and number of recombination centres. However for p-i-n structure microcrystalline ( µc-Si: H) cell which has much less light induced degradation than a-Si:H cell, not much work has been done on development of proper buffer layer and its application to µc-Si:H cell. In this paper we have reported the development of two intrinsic oxide based microcrystalline layer having different characteristics for use as buffer layers at the p/i interface of µc-Si:H cell. Previously SiO_x:H buffer layer has been used at the p/i interface which showed positive effects. To explore the possibility of improving the performance of p-i-n structure µc-Si:H cell further we have thought it interesting to use two buffer layers with different characteristics at the p/i interface. The two buffer layers have been characterized in detail and applied at the p/i interface of the µc-Si:H cell with positive effects on all the PV parameters mainly improves the open circuit voltage (V_oc) and enhances short circuit current (I_sc). The maximum initial efficiency obtained is 8.97% with dual buffer which is 6.7% higher than that obtained by using conventional single buffer layer at the p/i interface. Stabilized efficiency of the cell with dual buffer is found to be ~9.5% higher than that with single buffer after 600 h of light soakings.     

1-氯-1,1-二硝基-2-(N-氯脒基)乙烷的合成、表征和晶体结构

采用高锰酸钾/盐酸体系氧化氨基的方法获得了1-氯-1,1-二硝基-2-(N-氯脒基)乙烷,收率为70%,用核磁、红外、质谱、元素分析等方法对该产物进行了结构表征.以二氯甲烷为溶剂制备出了其单晶,用X射线单晶衍射仪测定了晶体结构.结果表明,该化合物的分子式为C2H2Cl2N4O4,相对分子质量为216.98,该晶体为正交...     

Ba2+取代对PSN-PZT瓷结构和压电性能的影响

研究了Ba2+A位取代对铌锑锆钛酸铅陶瓷结构及压电性能的影响,XRD分析结果表明:所有样品具有钙钛矿结构,同时Ba2+取代Pb2+使得晶胞体积增大,c/a轴比减小。当Ba2+取代量增大时,样品中三方相和四方相共存。随着Ba2+取代量的增大,陶瓷样品的密度降低,εr(2863)和d33(507pC·N–1)显著提高,居里点向室温移动。     

激光头主板用FPC关键材料研究

FPC有广阔的发展及应用空间,对FPC的的卷曲、弯折以及温度和湿度载荷下的疲劳可靠性也有了更高的要求。本文通过对激光头主板用FPC关键材料的实验研究,通过对比实验选择出了提高激光头主板FPC电路的弯折性的FPC材料,其产品电路的弯折达1000万次,达到国内的先进水平。