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81.
循环水阻垢缓蚀剂在新昌电厂的应用 总被引:1,自引:0,他引:1
针对新昌电厂循环水的低硬度、低碱度水质特点,通过大量试验,筛选复配出适合低硬度低碱度水的阻垢缓蚀复合药剂.该阻垢缓蚀复合药剂在新昌电厂1年的应用效果证明,使用缓蚀阻垢剂能够较好地控制循环水系统的腐蚀与结垢问题,通过药剂的协同增效作用,能使循环冷却水的浓缩倍数达到6左右. 相似文献
82.
Jie Hu Guangming Liang Qin Yu Kun Yang Xiaofeng Lu 《Digital Communications & Networks》2022,8(3):303-313
Activating Wireless Power Transfer (WPT) in Radio-Frequency (RF) to provide on-demand energy supply to widely deployed Internet of Everything devices is a key to the next-generation energy self-sustainable 6G network. However, Simultaneous Wireless Information and Power Transfer (SWIPT) in the same RF bands is challenging. The majority of previous studies compared SWIPT performance to Gaussian signaling with an infinite alphabet, which is impossible to implement in any realistic communication system. In contrast, we study the SWIPT system in a well-known Nakagami-m wireless fading channel using practical modulation techniques with finite alphabet. The attainable rate-energy-reliability tradeoff and the corresponding rationale are revealed for fixed modulation schemes. Furthermore, an adaptive modulation-based transceiver is provided for further expanding the attainable rate-energy-reliability region based on various SWIPT performances of different modulation schemes. The modulation switching thresholds and transmit power allocation at the SWIPT transmitter and the power splitting ratios at the SWIPT receiver are jointly optimized to maximize the attainable spectrum efficiency of wireless information transfer while satisfying the WPT requirement and the instantaneous and average BER constraints. Numerical results demonstrate the SWIPT performance of various fixed modulation schemes in different fading conditions. The advantage of the adaptive modulation-based SWIPT transceiver is validated. 相似文献
83.
Zs. T
kei F. Iacopi O. Richard J. Waeterloos S. Rozeveld E. Beach B. Mebarki T. Mandrekar S. Guggilla K. Maex 《Microelectronic Engineering》2003,70(2-4):352-357
Barrier integrity of Ta-films deposited using the enhanced coverage by re-sputtering (EnCoRe1) barrier was investigated on untreated surfaces of blanket porous SiLK, 2 semiconductor dielectric (developmental version 7, hereinafter v7). Barrier integrity of a bi-layer EnCoRe Ta(N)/Ta film was studied on single damascene lines using v7 and porous SiLK semiconductor dielectric (developmental version 9, hereinafter v9). On blanket wafers more than 30 nm barrier thickness is necessary to achieve complete pore sealing. Analysis of the sheet resistance showed that when tantalum is deposited, a low resistivity -phase is nucleated on the low-k surface. When deposited onto single damascene structures, EnCoRe Ta(N)/Ta is successful in providing a continuous metallic barrier layer over v7 and v9 semiconductor dielectric lines. 相似文献
84.
All-optical wavelength conversion based on multi-section semiconductor optical amplifiers (SOAs) in a symmetrical Mach-Zehnder interferometer (SMZI) is modeled for use in optical networks. It incorporates an enhanced SOA model that is implemented using the time domain transfer matrix approach and hence the overall numerical model determines simultaneously the wavelength and gain parameters for the wavelength converter. The overall model accurately predicts the optimal conditions for the SMZI arrangement in order to achieve the best results for the chirp, the phase inversion and the converted probe signal power. It is also demonstrated that large chirp and mismatch of the phase inversion reduces the eye opening ratio (EOR) which can seriously affect the performance of the wavelength converter to be used as a sub-system component in all-optical networks. 相似文献
85.
JINXiang-liang CHENJie QIUYu-lin 《半导体光子学与技术》2003,9(2):75-78
The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-Chrge transfer for the bipolar junction photogate is established in detail.Some numerical simulations are obtained unider 0.6μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-Charge at applied voltage. 相似文献
86.
87.
归纳了微电子机械系统中多晶体材料微构件在微塑性加工和应用中其力学性能所表现出来的尺度效应及其多种尺寸关联的主要特征,介绍了微构件外形几何尺寸和材料内部微结构尺寸对其弹、塑性力学性能尺度效应耦合影响的实验和模型研究的主要进展。重点总结并分析了多晶体材料微构件越小越强和越小越弱两种类型尺度效应的研究方法以及测试、影响因素及微观机理初步分析的结果。结论是:微构件内、外尺寸的耦合关联影响控制了尺度效应和与其相对应的材料内在特征长度,今后如能进一步探明微构件外形结构尺寸、晶粒尺寸和材料内在特征长度与其性能异变之间的制约关系,基于晶体学和高阶理论建立较全面、系统的力学分析模型,将有可能揭示微构件多晶材料内在特征长度的微结构控制的机理,进而实现通过调控材料的微结构控制微构件的宏观力学性能。 相似文献
88.
Mohammad Hossein Moaiyeri Reza Faghih Mirzaee Tooraj Nikoubin Omid Kavehei 《International Journal of Electronics》2013,100(6):647-662
Novel direct designs for 3-input exclusive-OR (XOR) function at transistor level are proposed in this article. These designs are appropriate for low-power and high-speed applications. The critical path of the presented designs consists of only two pass-transistors, which causes low propagation delay. Neither complementary inputs, nor V DD and ground exist in the basic structure of these designs. The proposed designs have low dynamic and short-circuit power consumptions and their internal nodes dissipate negligible leakage power, which leads to low average power consumption. Some effective approaches are presented for improving the performance, voltage levels, and the driving capability and lowering the number of transistors of the basic structure of the designs. All of the proposed designs and several classical and state-of-the-art 3-input XOR circuits are simulated in a realistic condition using HSPICE with 90 nm CMOS technology at six supply voltages, ranging from 1.3 V down to 0.8 V. The simulation results demonstrate that the proposed circuits are superior in terms of speed, power consumption and power-delay product (PDP) with respect to other designs. 相似文献
89.
基于不同投资规模和数据规模,提出了输配电GIS的建设原则和总体结构.详细探讨了系统主要功能的设计与实现,并给出了系统实施过程的矢量图形数字化方法。他们都对其他GIS项目的设计和实施具有重要指导意义。 相似文献
90.