Multilayered MoS2 nanoflakes bound to carbon nanotubes as electron acceptors in bulk heterojunction inverted organic solar cells

We demonstrate the deposition of multilayered MoS₂ on a low-cost metallic-semiconducting carbon nanotube via chemical vapor deposition, and the use of this material as electron acceptor species forming a bulk heterojunction with P3HT in inverted-type organic photovoltaics (OPVs). This is an uplifting discovery, in which MoS₂ has been used as an electron acceptor in spite of its innate immiscibility with organic compounds. This is possible because we utilize carbon nanotube’s nature to intercalate with P3HT through π–π interaction. The successful binding of MoS₂ onto carbon nanotube bundles and its optoelectronic effect as a photovoltaic device has been lucidly analyzed through various techniques in this paper. The effect has been ultimately evidenced by a power conversion efficiency of 0.46%, which proves MoS₂ with many advantages can also be used as a photoactive layer.     

应用于裸芯片去污的气相清洗技术

军用和民用微型电子产品的MCM、HIC等复杂混合电路正在越来越多地采用裸芯片,然而,裸芯片由于尺寸小、电路密集、焊盘间距小等原因,在进行组装的过程中一旦有微量的污染物出现,就会对裸芯片的应用造成较大影响。气相清洗通过清洗溶剂蒸汽在组件表面冷凝,形成液体滴下带走污染物,避免了传统的通过机械力、超声振动等清洗方式对裸芯片造成的不可修复的损伤。对限幅二极管砷化镓裸芯片、硅基裸芯片进行气相清洗,有效除去裸芯片表面的污染物,具有无损高效的特点。     

Ag and Cu migration phenomena on wire-bonding

After storing a plastic packaged sample at 250°C for 588 h, the Au plus 1% Pd wire composition was found to be changed. The Ag and Cu atoms can migrate from the wedge bond through the wire surface and arrive at the ball bond. At the same time, Ag and Cu atoms diffuse into the gold wire itself and form a layer type structure. The atom migration phenomena are due to three driving forces: diffusion, alloy formation, and Galvanic effect. The obtained diffusion rate constant is in the order of 10⁻¹² cm square per sec, which corresponds to an activation energy of 0.7∼0.76 eV. The phases sequence formed by diffusion is inconsistent with the equilibrium Ag-Au-Cu phase diagram which indicates that the present diffusion layer has reached thermodynamic equilibrium.     

绕制精密螺旋线的系统技术

在螺旋线型慢波电路行波管中,精密螺旋线是重要的组成部分,由于精密螺旋线的绕制要求高（包括螺距精度、螺旋线形状）,行业研究机构、制造与使用单位、检测部门等在不断地进行系统研究和工艺试验。对绕制精密螺旋线系统的主要结构、控制方法进行了叙述,经实际应用证明了这种方法的可行性。     

Footprint study of ultrasonic wedge-bonding with aluminum wire on copper substrate

The effects of the process parameters of ultrasonic power and normal bonding force on bond formation at ambient temperatures have been investigated with scanning electron microscopy (SEM) and energy-dispersive x-ray (EDX) analysis. A model was developed based on classical microslip theory¹ to explain the general phenomena observed in the evolution of bond footprints left on the substrate. Modifications to the model are made due to the inherent differences in geometry between ball-bonding and wedge-bonding. Classical microslip theory describes circular contacts undergoing elastic deformation. It is shown in this work that a similar microslip phenomenon occurs for elliptical wire-to-flat contacts with plastically deformed wire. It is shown that relative motion exists at the bonding interface as peripheral microslip at lower powers, transitioning into gross sliding at higher powers. With increased normal bonding forces, the transition point into gross sliding occurs at higher ultrasonic bonding powers. These results indicate that the bonding mechanisms in aluminum wire wedge-bonding are very similar to those of gold ball-bonding, both on copper substrate. In ultrasonic wedge-bonding onto copper substrates, the ultrasonic energy is essential in forming bonding by creating relative interfacial motion, which removes the surface oxides.     

半导体量子线材料

综述了半导体量子线材料的最新动态和发展趋势。     

利用电致发光线的光学电压有效值传感器

利用电致发光(EL)线设计并实验研究了一种光学电压有效值传感器。所用EL线的主要材料为ZnS:Cu,在一定幅值的工频电压作用下,可产生中心波长约为525nm的可见光;将此EL用塑料光纤(POF)传输到光电探测器(PD),则PD的开路电压与被测电压有效值之间具有近似线性关系。对100～500V工频电压有效值进行了实验测量,其电压测量灵敏度约为10.8μV/V,非线性误差低于1.8%。实验测量了所用EL线的电致发光光谱、输入阻抗以及EL的温度特性。与以往基于Pockels电光效应的光学电压传感器不同的是,本文提出的电压传感器不需要工作光源,并具有结构简单、成本低等优点。     

24-二硝基茴香醚基含铝熔铸炸药爆轰临界直径的实验研究

为了揭示2,4-二硝基茴香醚(DNAN)基高能钝感熔铸炸药的爆轰传播特性,加快DNAN基熔铸炸药的工程化应用,采用连续导线法测量了DNAN基含铝熔铸炸药的临界直径。结果表明：Al含量（质量百分比0~30%）增大、Al粒度d₅₀（分别为6 μm、12 μm、31 μm）减小均会降低爆轰传播的临界直径;黑索今（RDX）的粒度d₅₀（分别为19 μm、147 μm、751 μm）增大、RDX品质提高会增大爆轰传播的临界直径。研究结果为DNAN基含铝熔铸炸药的配方和战斗部结构设计提供基础的技术参数。