Influence of deposition parameters on surface morphology and application of CuInS2 thin films in solar cell and photocatalysis

Copper indium disulfide (CuInS₂) thin films as an absorption layer for solar cell and photocatalytic degradation of organic pollutants, were successfully electrodeposited on the FTO coated glass substrate using the simple and inexpensive electrodeposition method and a sulfurization process. The effects of the Cu/In molar ratio, annealing temperature and kind of Cu²⁺ precursor (Cu(salen) and Cu(acac)₂ as novel Cu²⁺ precursors) on the structural and morphological properties of samples were examined. The XRD diffraction patterns and energy dispersive spectroscopy measurements exhibit that high-quality film with superior crystalline structure was formed in the presence of Cu(salen) as Cu²⁺ precursor. Also, we found that a suitable heat treatment temperature could suppress the CuS phases and form well-crystallized CIS. As we know, this is the first reported efficiency for any CuInS₂ superstrate solar cell to date that fabricated using Cu(salen) as Cu²⁺ precursor. In addition, the photocatalytic degradation of organic dye in the presence of as-synthesized CuInS₂ thin films was studied. The as-prepared semiconductor photocatalysts have a good reusability; it can be successfully reused for 5 times recycling photoactivity tests.     

On Burst Length Distribution and Preemption Probabilities in OBS Networks with Burst Segmentation

Recently, preemption techniques have attracted considerable attention as a means to provide differentiated quality of service in optical burst switching (OBS) networks. This paper is focused on the analysis of preemption probabilities for bursts within the same priority class. As proposed by Vokkarane and Jue ((2003)* IEEE J Select Areas Commun 21(7): 1198–1209) an incoming burst will preempt the burst in service, within the same priority class, if the residual length of the burst in service is smaller than the incoming burst length. For a general case with wavelength conversion, the preemption probability of contending bursts with a generic service distribution, not necessarily exponential, is analyzed. First, we show that the size distribution for the preempting bursts is shifted to larger values, in comparison to the original burst size distribution. Second, we obtain an upper and lower bound for the preemption probability. Finally, the asymptotic behavior of the OBS switch is analyzed showing that preemption will always occur for a very large number of wavelengths.     

Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).     

Gamma-irradiation-induced Ag/SiO2 composite films and their optical absorption properties

Small Ag particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO₃ solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO₂ films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.     

Integrated Survivability Strategies of IP／GMPLS／Opticai Multi——layer Network

In last decade,due to that the popularity of the internet, data--central traffic kept growing, some emerging networking requirements have been posed on the today‘s telecommunication networks,especially in the area of network survivability. Obviously, as a key networking problem, network reliability will be more and more important. The integration of different technologies such as ATM, SDH, and WDM in multilayer transport networks raises many questions regarding the coordination of the individual network layers.This problem is referred as multilayer network survivability. The integrated multilayer network survivability is investingated as well as the representation of an interworking strategy between different single layer survivability schemes in IP via generalized multiprotocol label switching over ootical netwnrk     

TCP Performance in Optical Packet-switched Networks

Optical packet assembly is a key function to support inter-working between TCP/IP networks and optical packet-switched networks. It is characterized by the assembly delay and by the segment aggregation needed to form an optical packet. These counter-balancing aspects depend on several environment variables, such as the TCP parameters, the access link speed, the optical packet size whose effects are studied in this paper. Performance evaluations are obtained by extensive simulations in terms of send rate of TCP flows, fairness, efficiency, and assembly delay. Some guidelines in the design of optical packets that take into account the results presented are given.     

Hopping and optical absorption of electrons in nano-porous crystal 12CaO·7Al2O3

Recently it has been discovered that a nano-porous main group oxide 12CaO·7Al₂O₃ (C12A7) can be converted from a wide-gap insulator to a good transparent conductor. Using ab initio modelling we explain good conductivity of this material by very small barriers for hopping of localised electrons between neighbouring positive cages. We show that optical absorption of C12A7 in infrared region and at energies higher than 2.7 eV is due to inter-cage and intra-cage electron transitions, respectively. The proposed mechanisms can be useful in further search for conducting transparent media.     

Synthesis and luminescence of Sr2CeO4 fine particles

Fine particles of a blue emission phosphor Sr₂CeO₄ have been synthesized using a chemical co-precipitation technique, and the textual and luminescent properties were compared with the one synthesized by the conventional solid-state reaction method. Particle size and distribution of the Sr₂CeO₄ fine powder prepared by the co-precipitation process were smaller and narrower than those obtained by the samples prepared from the conventional one. The emission intensity of the fine particles was equal to that of the larger particles prepared from the solid-state reaction, on the contrary to the general tendency that emission intensity decrease with particle size reduction. Although no Ce³⁺ peaks were observed in EPR measurements, X-ray photoelectron spectra of the samples clearly elucidated the existence of Ce³⁺ only on the surface of Sr₂CeO₄.     

一种新颖的表面等离子谐振效应光波导水质传感技术

光学表面等离子谐振（ＳＰＲ）效应是一种很有效的水质检测技术，经过详细的理论推导，同了ＳＰＲ反射光强的普遍适用公式。在纯水与受污染水两种情况下，根据一些已知参数计算出结果。由计算结果数据一出的曲线比较表明，ＳＰＲ效应在两种情况下有明显差别，这也正是ＳＰＲ效应用于水质检测的理论根据。     

Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping

We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic and erbium by ion implantation. SIPOS thin films are mixtures of silicon and silicon oxide phases. The chemical and morphological evolution of these phases upon annealing is emphasized. Electrical conductivity measurements are interpreted in terms of a physical model containing few free parameters related to the material microstructure. A direct extension of this model explains also the conductivity increase in SIPOS doped with elements of the third or the fifth group. In the last part of the paper, data of electroluminescence at 1.54 μm in Er-implanted SIPOS due to intra-4f transitions of the Er³⁺ ion are shown and discussed.