PtSi单片式红外CCD

本文讨论单片式 PtSi—Si(p)SB IRCCD 的工作机理、芯片结构、制备工艺及其性能改善,该器件适用于3～5μm 红外光谱区的热成像。本文还讨论了带新型光学共振腔结构的 PtSi 肖特基势垒光探测器阵列的制作与特性,最后介绍了该两维红外焦平面阵列(FPA)的应用及发展动向。     

用OTCS方法测量InP：Fe中的深能级

用光激瞬态电流谱（ＯＴＣＳ）方法测量半绝缘ＩｎＰ：Ｆｅ的深能级，研究了光强对ＯＴＣＳ测试的影响，在低温下，用强光滑蜊测得ＩｎＰ：Ｆｅ中存在ＥＴ＝０．３４ｅＶ的电子陷阱和ＥＴ＝１．１３ｅＶ的空穴陷阱，光强增大，ＥＴ＝０．３４ｅＶ的电子陷阱的ＯＴＣＳ峰的位置向高温方向移动，不同的光强下测得的ＥＴ也不同。文章从光的强度影响深能级的填充率对ＥＴ进行了理论修正。实验上发现修正后误差大大减小了。     

Infrared photodetectors based on reduced graphene oxide and graphene nanoribbons

The use of reduced graphene oxide (RGO) and graphene nanoribbons (GNRs) as infrared photodetectors is explored, based on recent results dealing with solar cells, light-emitting devices, photodetectors, and ultrafast lasers. IR detection is demonstrated by both RGO and GNRs in terms of the time-resolved photocurrent and photoresponse. The responsivity of the detectors and their functioning are presented.     

石墨烯光电子器件的应用研究进展

自2004年被发现以来,石墨烯因其卓越的光学和电学性能及其与硅基半导体工艺的兼容性,备受学术界和工业界的广泛关注。作为一种独特的二维原子晶体薄膜材料,石墨烯有着优异的机械性能、超高的热导率和载流子迁移率、超宽带的光学响应谱及极强的非线性光学特性,使其在新型光学和光电器件领域具有得天独厚的优势。一系列基于石墨烯的新型光电器件先后被研制出,已显示出优异的性能和良好的应用前景。此外,近期石墨烯表面等离子体激元的发现及太赫兹器件的研究进一步促进了石墨烯基光电器件的蓬勃发展。综述重点总结近年来石墨烯在超快脉冲激光器、光调制器、光探测器以及表面等离子体领域的应用研究进展,并进一步分析目前所面临的主要问题、挑战及其发展趋势。     

内调制多色比色测温系统

发射率表征待测体与黑体的辐射强度之比,它与材料的性质、表面状态密切相关,随时间变化而变,并显著影响测温精度。为此提出了一种新的多色比色测温方法,该方法可以对待测体的发射率进行实时修正,具有自适应的特点,使测温仪可以快速、准确地测量温度。采用这种测温方法研制出新型的内调制多色比色测温系统,测温仪用内调制光电探测器作为探测单元,探测器能将恒定的光信号转变为交流电信号输出,便于信号放大和消噪,有效地提高了系统的信噪比。在1050～1650℃范围,测温最大误差为6．2‰。     

Preparation and characteristics study of self-powered and fast response p-NiO/n-Si heterojunction photodetector

The growth of crack-free nanostructured NiO films with good crystalline quality is of high importance for photodetectors to avoid performance failure. In this work, physical properties of spin coated NiO films were controlled by changing diethanolamine (DEA) to nickel acetate (NiAc) molar ratio (0:1–1:1) and post annealing temperature (300–650 °C). NiO film coated at DEA:NiAc molar ratio of 0:1 suffered from severe cracks and poor crystallinity, and by increasing the molar ratio to 1:1 a crack-free NiO with enhanced grain growth was obtained. With the increase of annealing temperature from 300 C to 600 °C, the crystallite size increased from 12.79 to 37.31 nm, and the bandgap decreased from 3.81 to 3.42 eV, indicating an enhancement in NiO film quality. A self-powered photodetector based on p-NiO/n-Si heterojunction showed broadband (UV-NIR) photodetection owing to synergistic photoelectric effect from both NiO film and Si substrate. The responsivity, detectivity, and external quantum efficiency were measured as 13.08, 46.02, 44.49, mA/W, 1.03 × 10¹¹, 3.65 × 10¹¹, 3.53 × 10¹¹, Jones, and 4.43%, 8.62%, 6.47% upon illumination with UV (365 nm), red (660 nm), and NIR (850 nm) lights, respectively. The photodetector showed high on/off current ratio of 1.210 × 10³ and fast response (less than 85 ms). These findings introduce p-NiO/n-Si heterojunction as a promising candidate for next generation optoelectronics.     

High-performance and broadband photodetection of bicrystalline(GaN)1-x(ZnO)x solid solution nanowires via crystal defect engineering

Crystal defect engineering is widely used as an effective approach to regulate the optical and opto-electronic properties of semiconductor nanostructures.However,photogenerated electron-hole pair recombination centers caused by structural defects usually lead to the reduction of optoelectronic perfor-mance.In this work,a high-performance photodetector based on(GaN)1-x(ZnO)x solid solution nanowire with bicrystal structure is fabricated and it shows excellent photoresponse to ultraviolet and visible light.The highest responsivity of the photodetector is as high as 60,86 and 43 A/W under the irradiation of 365 nm,532 nm and 650 nm,respectively.The corresponding response time is as fast as 170,320 and 160 ms.Such wide spectral responses can be attributed to various intermediate energy levels induced by the introduction of various structural defects and dopants in the solid solution nanowire.Moreover,the peculiar bicrystal boundary along the axial direction of the nanowire provides two parallel and fast trans-mission channels for photo-generated carriers,reducing the recombination of photo-generated carriers.Our findings provide a valued example using crystal defect engineering to broaden the photoresponse range and improve the photodetector performance and thus can be extended to other material systems for various optoelectronic applications.     

用InGaAs材料制作的2.6 μm光电探测器

2.6 μm In_0.82Ga_0.18As/InP P-N heterojunction photodetectors are introduced.A compositionlly graded layer is effective to accommodate the 20% lattice mismatch between the InP substrate and the In_0.82Ga_0.18As active layer of the device.The quantum efficiency is 70%～75% over the wavelength of 2.1 μm～2.6μm,with dark current of 3.5 μA at -2 V reverse bias and the room temperature.     

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 10¹⁷ cm⁻³ and an electron mobility of 215.25 cm² V⁻¹ s⁻¹. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 10⁴ A W⁻¹), and quantum efficiency (1.96 × 10⁶%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.