InAs／InP_（0．7）Sb_（0．3）热电子晶体管的f_T及f_（max）

用电荷控制及热电子弹道运动模型计算ＩｎＡｓ／ＩｎＰ０．７Ｓｂ０．３热电子晶体管的截止频率ｆＴ及最高振荡频率ｆｍａｘ。结果表明，ｆＴ、ｆｍａｘ分别达到２８０ＧＨｚ及６００ＧＨｚ。并指出，通过生长ＧａＳｂ中间层，ＩｎＡｓ／ＩｎＰ０．７Ｓｂ０．３ＨＥＴ可在ＧａＡｓ衬底上实现单片集成。     

稠油油藏的注汽量预测

利用HCZ预测模型，可对已开发油田的年产量和累计产量进行全程预测，并且在实际应用中取得了较好的预测结果。本文结合稠油田的实际情况，推导出HXZ预测模型在热采中注汽参数的预测公式。结合曙光油田曙1－7－5块的开发数据进行了预测，效果较好。     

Analysis of characteristic odors from human male axillae

A number of studies concerning the analysis of axillary odors have assumed that the characteristic odor produced in the axillae is due to volatile steroids and isovaleric acid. Organoleptic evaluation of Chromatographic eluants from axillary extracts was employed to isolate the region in the chromatogram where the characteristic odor eluted. The odor of the dissolved eluant was eliminated when it was treated with base, suggesting that acids make up the characteristic axillary odor. Subsequent extraction of the pH-adjusted axillary extract in conjunction with organoleptic evaluation of the Chromatographic eluant, preparative gas chromatography, and analysis by GC-MS as well as GC-FTIR showed the presence of a number of C₆ to C₁₁ straight-chain, branched, and unsaturated acids as important contributors to the axillary odor. The major odor component is (E)-3-methyl-2-hexenoic acid. Three homologous series of minor components are also important odor contributors; these consist of the terminally unsaturated acids, the 2-methyl-C₆ to -C₁₀ acids and the 4-ethyl-C₅ to -C₁₁ acids. These types of acids have not been reported previously as components of the human axillary secretions and have not been proposed previously as part of the principal odor components in this area.     

基于B／S的国贸商务信息管理系统开发研究

阐述了B/S模式的基本原理及特点,实现了基于B/S模式的国贸商务信息系统,并对实现中采用的技术作了简要的讨论。此系统是一个跨区域、跨平台的商务信息管理系统,能够实现国贸公司内部信息,如外销、采购、库存等信息的实时交互,使信息得到及时的传递。     

西门子PLC与计算机间的通讯程序设计

介绍了西门子（Siemens）公司生产的S7－200型PLC与计算机之间的通讯网络构成及主要通讯指令，说明了利用PLC进行通信的实质和设计步骤，给出了PLC与计算机通讯时上位机和下位机的相应程序。     

Oxygen-enrichment of YBa2Cu3 YBa2Cu3O7-δ using the fluidization techniqueusing the fluidization technique

The oxygen-deficient phase of the highT _c superconductor, YBa₂Cu₃O₇, was oxygen-enriched using the fluidization technique to give good superconducting properties. The normal method of oxygen treatment at 900°C for 24 h and at 600°C for 24 h has been reduced to just one treatment at 600°C for 12 h by the fluidization technique to achieve almost the same strength of superconducting signal for the YBa₂Cu₃O₇ powder, which establishes the attractiveness of the latter route for the large-scale preparation of superconducting material. The particle sizes were in the range 0–90, 90–180 and 180–420 μm. The fluidized particles were crystalline with orthorhombic distortion.T _c ^onset , estimated using the a.c. magnetic susceptibility method, was 91·3 K. The volume fraction of superconducting material in the product was 83·7–85·3%, one of the highest values reported so far for YBa₂Cu₃O₇.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Si衬底上横向外延GaN材料的微结构和光学性质的研究

用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。透射电子显微镜 (TEM )的研究结果表明 ,横向外延区域GaN的位错密度明显减小。由于SiO2 掩膜腐蚀角的不同 (分别为 90°和 6 6°) ,导致了横向外延GaN材料一些独特的微观形貌。微区拉曼光谱由数百条拉曼散射曲线组成 ,每一条曲线有三个振动模 ,分别对应Si振动模式 (5 2 0cm- 1) ,E2 模式 (5 6 6cm- 1)和E1(LO)模式(732cm- 1)。在垂直条纹方向 ,峰位和峰宽没有明显的变化 ,而峰强约 5 μm会发生周期性变化