用SEM研究高聚物的微观形态结构

用扫描电子显微镜（ＳＥＭ）,对ＨＤＰＥ／ＣａＣＯ３填充高聚物、ＰＰ／ＥＰＤＭ高聚物共混物和ＰＡ／ＣＦ增强复合材料的微观结构形态进行了研究,并分析了各材料的改性机理,证明了ＳＥＭ技术在高分子多相体系的形态结构、界面状况、损伤机制及材料性能预测等研究中发挥着重要作用。     

富勒烯形貌的多样性及超微观结构

目的：通过催化热解法制备了多种形态的富勒烯。对不同工艺参数下形成的富勒烯的形貌和超微观结构进行了SEM、HRTEM、XRD和Raman谱等测试分析。结果表明：形成的富勒烯主要包括单纯洋葱状富勒烯、金属纳米微粒内包洋葱状富勒烯,以及树枝状和线团状等特殊形态的富勒烯。被洋葱状富勒烯包裹的金属为纯Fe纳米微粒。拉曼谱峰分析结果表明石墨化程度很高。     

Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe–PbSrSe MQW structure

Fabrication of microrods from multi-quantum well (MQW) PbSe–PbSrSe structure grown in molecular beam epitaxy (MBE) followed by its morphological as well as optical characterizations are described. Pulsed PL intensity is increased by 64 times per unit surface area from a free-standing MQW microrod mounted on copper heat sink compared with the bulk sample. Enhancement in side emission power due to the higher optical confinement effect during pulsed photoluminescence (PL) from MQW semiconductor microtube inserted in hollow quartz optical fiber signifies that these microstructures are robust in nature and crucial contenders for portable mid-infrared optoelectronic devices to be used in the field of industrial trace-gas sensing.     

穿心莲内酯在超临界CO2萃取中晶体的形成与生长

用扫描电镜观察了超临界CO2结晶的穿心莲内酯颗粒微观形貌，并利用液相色谱进行纯度检测，阐述了穿心莲内酯在超临界CO2萃取中晶体在结晶板上成核、生长及分布。结果证实：超临界CO2在萃取釜中能同步萃取结晶穿心莲内酯，且在本实验条件下(压力低于25MPa)，晶体纯度在结晶板上呈梯度分布：从下到上，纯度越来越高。     

含1.2%铝TRIP钢中残留奥氏体的EBSD研究

残留奥氏体的含量、颗粒尺寸与分布及其稳定性是相变诱导塑性（TRIP）钢获得优良使用性能的关键。马钢试制成功含1.2%铝的TRIP-600钢板,作者用场发射枪扫描电镜EBSD技术对该TRIP钢的残留奥氏体形态、分布与体积分数进行了实验研究。结果表明：实验钢中的奥氏体主要呈细小颗粒状、尺寸在几微米以下,弥散分布于铁素体晶界和晶粒内。EBSD与X-射线衍射测得实验钢板半厚度区的奥氏体体积分数分别为2%和11.4%。本文讨论了EBSD技术测定TRIP钢奥氏体分数引入误差的主要因素。采集图像的步长、试样分析区的选取及试样制备技术等是影响实验结果的重要因素。     

Reprint of: Electron channelling contrast imaging for III-nitride thin film structures

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI, especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.     

用AMRAY－1910FE场发射扫描电镜研究不同材料和方法的导电膜蒸镀对试样形貌观察的影响

本文通过离子溅射镀膜和高真空蒸发镀膜两种方法，用金和钯铱合金做为蒸发源，对样品表面蒸镀导电层。然后用ＡＭＲＡＹ－１９１０ＦＥ场发射扫描电镜观察试样表面蒸镀层对试样形貌的影响。实验表明在放大倍数超过５万倍以上观察试样时，由于金镀层粒度太大，因此不能用来做为表面导电镀层。但用高真空蒸发镀膜，用钯铱合金做为试样表面蒸镀材料，在２５万倍以下观察时，无论从膜的导电性方面或是其颗粒度方面来看都不失为一种较好的蒸镀材料。     

覆铜板用二氧化硅粉水萃取液呈酸性原因探讨

球形超细二氧化硅粉样品,经过水萃取处理后,分别利用电感耦合等离子体原子发射光谱(ICP-AES)测试水萃取液中金属杂质含量,利用场发射扫描电镜(SEM)测试微粉表观形貌,并结合X射线能量色散谱分析(EDS)球形粉表面微区分析,结果表明,球形二氧化硅粉在球形化过程中,由于颗粒度大部分为纳米级,纳米级二氧化硅粉体具有高的比表面积,因而表面吸附燃气燃烧后二氧化碳气体作用较二氧化硅微粉显著增强,结果水萃取后二氧化碳溶于水,生成碳酸,这是水萃取液呈酸性的主要原因。     

Growth of CdTe Films on Amorphous Substrates Using CaF<Subscript>2</Subscript> Nanorods as a Buffer Layer

Continuous biaxially textured CdTe films were grown on biaxial CaF₂ buffer layers. The CaF₂ nanorods were grown by oblique angle vapor deposition and possessed a {111} 〈121〉 biaxial texture. The CdTe film was deposited by metal organic chemical vapor deposition (MOCVD). Film morphology and the CdTe/CaF₂ interface were studied by scanning electron microscopy and transmission electron microscopy. Characterization showed that small CdTe grains formed initially from the CaF₂ surfaces. These small grains then merged into large columnar grains during growth. Analysis revealed that the crystalline orientation of the CdTe film followed the biaxial texture of the CaF₂ nanorods.     

Cl2/Ar/BCl3ICP刻蚀AlGaN的研究

感应耦合等离子体（ICP）刻蚀在AlGaN基紫外探测器台面制作中起着重要作用。在对比了ICP与RIE，ECR等干法刻蚀技术优缺点的基础上，采用Ni作为掩膜，Cl2/Ar/BCl3作为刻蚀气体，对金属有机化学气相淀积生长的n-Al0.45Ga0.55N进行了ICP刻蚀研究。刻蚀速率随着ICP直流偏压的增加而增加，刻蚀速率随着ICP功率的增加先增加较快后增加缓慢。最后结合刻蚀表面的扫描电镜（SEM）分析和俄歇电子能谱（AES）深度分析对刻蚀结果进行了讨论。分析表明，在满足刻蚀表面形貌的同时，较低的直流偏压下刻蚀速率较慢，但损伤较小，这对于制备高性能的紫外探测器是有利的。