Effects of substrate roughness on infrared-emissivity characteristics of Au films deposited on Ni alloy

Low-emissivity Au thin films were sputter-deposited on three groups of nickel alloy substrates with different surface roughness for high-temperature application. After deposition, the samples were heated in air at 600 °C for 200 h to simulate the application environment. The results showed that the substrate roughness had great influences on infrared-emissivity characteristics of the Au films. The average infrared emissivity of the samples with small roughness just increased a little after heat treatment, while it greatly increased for the sample with large roughness. Increasing the roughness of the samples will not only increase the effective surface emitting area, but also become a detriment to the integrity of Au films.     

A simulation study of the effect of the diverse valence-band offset and the electronic activity at the grain boundaries on the performance of polycrystalline Cu(In,Ga)Se2 solar cells

The paper presents a two-dimensional simulation study of a polycrystalline Cu(In,Ga)Se₂ (CIGS) solar cell with various shapes of grains inside the CIGS absorber layer. The grain boundaries (GBs) with a diverse valence-band offset (VBO) and the density of defect states (N_tA) are considered so as to evaluate their effects on the performance of the CIGS cell. The numerical simulations show that a CIGS cell with column-like grains can achieve a high conversion efficiency (η), while the η of a CIGS cell with diamond-like grains is low if the VBO at the GBs exceeds 0.4 eV. The VBO at which the η of the CIGS cell with diamond-like grains peaks is found at 0.20-0.27 eV. A favorable VBO mainly depends on the shape of the grains, but it also depends on the N_tA. The simulations of the CIGS cells in the substrate and superstrate configurations showed that their performances change if the VBO is varied. This result also implies that the configuration of the CIGS cell is important and the substrate configuration with larger grains in the space-charge region has a considerable advantage if the VBO ranges from 0 eV to 0.2 eV.     

Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques

Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.     

基于半模基片集成波导的双频段缝隙天线

基于半模基片集成波导技术,提出了一种适用于微波集成电路的双频段缝隙天线。该双频段天线由馈电微带线,一段半共面波导结构和具有辐射缝隙的半模基片集成波导谐振腔构成,利用半模基片集成波导谐振腔的多模式工作特性实现了天线多频段特性。仿真和测试结果表明,该天线能同时工作在C频段(谐振频率5.74 GHz,S11=-21.86 dB)和X频段(谐振频率11.33 GHz,S11=-25.09 dB),不需要同时采用两个天线,具有便于和平面电路集成、体积小、结构简单、成本低等优点。     

Substrate integrated waveguide loaded by 3-dimensional embedded split ring resonators

A substrate integrated waveguide (SIW) loaded by three-dimensional embedded split ring resonators (3-DESRRs) is discussed theoretically and experimentally. The 3-DESRR structure which has proved to be an alternative magnetic metamaterial resonator for SIW structures is able to provide negative transversal permeability if excited properly. The 3-DESRR loaded SIW shows a bandpass-like response as an effect of loading the 3-DESRRs in the SIW. The lower and upper band edges of the resulting transmission line (TL) are determined by the SIW cutoff (f_c) and the resonance frequency of the 3-DESRRs, respectively. Finally, a prototype of the proposed 3-DESRR loaded SIW TL is fabricated and tested. The measured results are in good agreement with those obtained by theory and simulation.     

平板显示技术论坛TFT-LCD生产线的分类及组线设备

综观国内外的TFT-LCD生产线,基本上都由阵列制作、面板制作、模块制作三大部分。主要介绍了TFT-LCD生产线的分类及其阵列、面板、模块制作的各工序组线设备的概况,供大家参考。     

Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's

This paper deals with the evaluation of a substrate-thinning technique as a way to control the substrate current issues. A test structure has been realized on a Smart Power Technology. Comprehension of the phenomena has been validated thanks to TCAD simulation. This technique was then applied to a commercial IC and the authors show that they succeeded to reduce by one decade the collected current on a victim, although the IC has already been optimized with classical solutions.     

MCT液相外延薄膜的生长和特性

用开管水平液相外延系统从富Te溶剂中生长了不同x值的MCT薄膜。经X射线衍射、Hall电学参数、红外光谱、扫描电镜、X射线能谱仪和电子通道花样分析测试,结果表明:外延薄膜表面平整,光学参数较好,纵向、横向组份均匀,晶体结构完整,电学参数较好,外延膜质量优良。短波材料(n型):载流子浓度3.54×10~(14)cm~(-3),迁移率1.63×10~4cm~2V~(-1)s~(-1);中波材料(n型):载流子浓度9.95×10~(14)cm~(-3),迁移率为1.76×10~4cm~2V~(-1)s~(-1);原生长波材料(n型):载流子浓度为2.15×10~(15)cm~(-3),迁移率2.00×10~4cm~2V~(-1)s~(-1)。     

基片负偏压对PEMSIP法铁基体TiN涂层相组成的影响

利用等离子体增强磁控溅射离子镀（ＰＥＭＳＩＰ）技术在铁基体上沉积ＴｉＮ涂层之前，先镀一层很薄的钛中间层，继之再沉积ＴｉＮ。研究了基片负偏压对涂层相组成的影响。结果表明，随着基片负偏压增加，膜层的相分朝着富氮相及其含量增加的方向发展，变化趋势为（α－Ｔｉ＋Ｔｉ_２Ｎ＋ＴｉＮ）→（Ｔｉ_２Ｎ＋ＴｉＮ）→ＴｉＮ。在基体与中间层界面处有ＦｅＴｉ相；在中间层与后继膜的交接处，发现α＝１与Ｔｉ_２Ｎ有取向关系。     

硅衬底RF集成电路螺旋电感品质因数Q的优化

详细分析了RF集成电路硅衬底螺旋电感(SIOS)的一种物理模型，该模型考虑了衬底效应。通过MATLAB仿真，得出了衬底损耗对螺旋电感品质因数Q的影响。在此基础上对金属线宽和线间距进行了严格的数值优化，实现了在设计要求不变的前提下螺旋电感Q的优化，并进一步推导出了最优化线圈宽度的近似解析式。采用优化结果进行设计，可以使Q得到明显提高。