A new family of ionic liquids based on the 1-alkyl-2-methyl pyrrolinium cation

Five new salts based on 1-alkyl-2-methyl pyrrolinium ion are reported, two involving the iodide ion and three involving the bis(trifluoromethanesulfonyl) amide ion. The iodide salts have melting points around 100 °C, while the amide salts have melting points around room temperature. Two of the amide salts can be easily quenched into the glassy state and exhibit glass transition temperatures around −70 °C. The 2-methyl pyrrolinium cation bears structural similarities to the aromatic imidazolium cations on one hand and the cyclic ammonium cation family based on the pyrrolidinium cation on the other. The properties of the salts reported here are compared within these two related families of salts.     

AlxGa1-xAs选择性湿法氧化技术的研究

详细研究了温度和Al组分与AlxGa1-xAs横向氧化速率的关系,通过分析氧化机制和实验得到的氧化宽度与时间的线性关系,指出在较短时间内的氧化为受AlxGa1-xAs材料与水汽反应速率限制的过程。运用优化的氧化条件,成功制备了氧化孔径为8μm的垂直腔面发射激光器,最大直流光输出功率为3.2mW,激射波长为978nm,工作电流为15mA。     

Selective hydrogenation of oleic acid to 9-octadecen-1-ol: Catalyst preparation and optimum reaction conditions

A new catalyst, ruthenium-tin-alumina is found to selectively hydrogenate oleic acid to 9-octadecen-1-ol (oleyl + elaidyl alcohol) at low pressure with high yield. Catalyst preparation methods, catalyst raw materials and activation conditions have a significant effect on the activity of the catalyst. The optimum atomic ratio of ruthenium to tin is about 1:2. Catalyst prepared by an improved sol-gel method shows higher activity and selectivity than catalysts prepared by impregnation and coprecipitation methods. Chloride is found to have a negative effect on catalytic activity. The best catalyst is prepared from chloride-free ruthenium and tin raw materials. Under the optimum reaction conditions of 250°C and 5.6 MPa, the selectivities for 9-octadecen-1-ol and total alcohol (9-octadecen-1-ol + stearyl alcohol) formation are 80.9% and 97%, respectively, at a conversion of 81.3%.     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

A formal model of asynchronous communication and its use in mechanically verifying a biphase mark protocol

We present a formal model of asynchronous communication between two digital hardware devices. The model takes the form of a function in the Boyer-Moore logic. The function transforms the signal stream generated by one processor into that consumed by an independently clocked processor, given the phases and rates of the two clocks and the communications delay. The model can be used quantitatively to derive concrete performance bounds on communications at ISO protocol level 1 (physical level). We use the model to show that an 18-bit/cell biphase mark protocol reliably sends messages of arbitrary length between two processors provided the ratio of the clock rates is within 5% of unity.     

二(二甲苯基)丙烷合成工艺的研究

二氯丙烷(DCP)与二甲苯在混合金属氯化物催化剂(HD90)作用下合成二(二甲苯基)丙烷,生产过程简单,产品收率高。在60—80℃的温度下,二甲苯与二氯丙烷摩尔比为6∶1,HD用量50克/摩尔DCP的条件下反应5—6小时,二(二甲苯基)丙烷的收率可达88％以上。     

推广的Kantorovi多项式的L_p保持Lipschitz条件性

本文研究推广的Kantorovi多项式P_n~*(f, x)在L_p[0,1]空间中的保持Lipschitz条件性质。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.