一种新型的光束分束结构--复合调制型光栅

提出利用表面既有浮雕,体内又有折射率调制的一种新型衍射光栅来实现光束分束功能。针对波长为850nm正负一级和零级等衍射效率的光束分束器,优化设计了面型为正弦形、三角形、矩形的浮雕光栅以及体积相位全息光栅和复合调制型光栅共五种光栅。同时数值模拟了该光栅结构在实验制作过程中对各光栅参量误差的不敏感程度,该光栅在实验制作上优于其他类型光栅。     

Improved morphology and crystalline quality of MBE CdZnTe/Si

We report on continuing efforts to develop a reproducible process for molecular beam epitaxy of CdZnTe on three-inch, (211) Si wafers. Through a systematic study of growth parameters, we have significantly improved the crystalline quality and have reduced the density of typical surface defects. Lower substrate growth temperatures (∼250–280°C) and higher CdZnTe growth rates improved the surface morphology of the epilayers by reducing the density of triangular surface defects. Cyclic thermal annealing was found to reduce the dislocation density. Epilayers were characterized using Nomarski microscopy, scanning electron microscopy, x-ray diffraction, defect-decoration etching, and by their use as substrates for HgCdTe epitaxy.     

在大幅面激光加工中获得稳定高质量聚焦的方法

从理论上分析和讨论了在大型激光加工系统中,导光距离对激光束聚焦性能的影响,描述了当前代表国际先进水平的多种提高和控制激光束聚焦性能的方法。     

高功率同轴抽运宽带拉曼放大

研究了在宽带条件下非聚焦的同轴拉曼放大 ,采用CH4 作为放大拉曼介质 ,抽运源为 2 48nm的高功率KrF准分子激光系统 ,最高抽运能量为 1 5J。给出了拉曼链一级放大器的级增益随小信号增益系数及放大器气压的变化。最后讨论了限制同轴宽带抽运拉曼放大的因素。     

具有特殊衍射强度分布的二元位相光栅设计

介绍了几种可形成特定衍射强度分布的Dammann位相光栅。在迭代设计中采用了模拟退火算法。对相位元件的输出特性进行了描述 ,同时分析了误差产生的原因。最后讨论了在金属表面激光改性处理中该类元件作为光束变换器件的应用。     

白噪声激励下双稳态压电发电系统的响应分析

研究了白噪声激励下双稳态压电发电系统的响应特性。首先利用蒙特-卡罗法模拟高斯白噪声;然后利用数值模拟和实验的方法分别分析了噪声强度、负载阻抗和初始值对系统响应特性的影响。得到了噪声强度的增加会减少双稳态系统两个稳定平衡点之间的跳跃时间。通过给出大幅运动的吸引域说明初始值会影响系统的运动状态,从而影响输出功率,当电阻为19.1kΩ时,输出功率最大。     

移动通信中的智能天线技术

智能天线技术已经成为移动通信领域中最具吸引力的技术之一，它能够根据所处的电磁环境，智能地调节自身参数，抑制干扰，提高天线增益，增加频谱利用率，从而改善移动通信系统的性能。介绍了智能天线的工作原理，阐述了智能天线常用的算法、数字波束成型技术、对系统性能的改善以及在移动通信系统中的应用，最后对智能天线的未来作了展望。     

激光再制造三维运动光束头

基于激光制造技术相关理论，设计并制造了激光同轴转动三维运动光束头。分析了三维运动光束头工艺参数对熔覆效果的影响，并讨论了其在工业应用实验中取得的效果。结果表明，该三维运动光束头能绕竖直轴转动和水平轴摆动;在参数一定的条件下，随着光束头摆动角度的增加，熔覆效果越来越不理想，理想的摆动角度为0°～45°;配合送粉头的粉末流聚焦及焦点可调功能，该光束头可以实现曲轴、螺杆、叶片等复杂型面零件的制造和再制造。     

Chemical Amplification of a Triphenylene Molecular Electron Beam Resist

Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation to date has been poor sensitivity. A new triphenylene derivative molecular resist, with pendant epoxy groups to aid chemically amplified crosslinking, was synthesized and characterized. The sensitivity of the negative tone, pure triphenylene derivative when exposed to an electron beam with energy 20 keV was ～ 6 × 10^–4 C cm^–2, which increased substantially to ～ 1.5 × 10^–5 C cm^–2 after chemical amplification (CA) using a cationic photoinitiator. This was further improved, by the addition of a second triphenylene derivative, to ～ 7 × 10^–6 C cm^–2. The chemically amplified resist demonstrated a high etch durability comparable with the novolac resist SAL 601. Patterns with a minimum feature size of ～ 40 nm were realized in the resist with a 30 keV electron beam.     

空心高斯光束在梯度折射率介质中的传输特性

利用柯林斯公式推导出空心高斯光束在梯度折射率介质中的传输公式,并利用此解析式进行数值计算和分析,讨论了梯度折射率介质对空心高斯光束传输特性的影响。结果表明,介质梯度折射率对空心高斯光束的传输性质有较大影响。