High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

内插法在相关干涉仪测向体制中的应用

测向误差的减小一直以来都是无线电测向精度提高的一个难点,对于不同的测向体制所采用的减小测向误差的方法都不尽相同。本文主要介绍的是相关干涉仪测向体制的基本原理以及通过内插法的应用来减小测向误差的方法。     

基于机器视觉薄零件高精度测量技术的研究

为快速准确检测薄零件几何量精度,提出了一种基于机器视觉的检测方法。根据具体的视场和精度要求,完成电荷耦合元件(CCD)传感器、镜头、光源等选型与硬件系统设计。开发了软件系统,采用双三次插值法细分图像后提取亚像素边缘,变权重最小二乘法拟合出零件轮廓的圆弧和直线,自动计算零件的圆度误差,中心距尺寸误差,并判断其是否合格。通过齿轮泵中间体零件的检测结果表明,本系统能快速准确检测中高精度(IT7级)薄零件的几何量精度,满足实际应用的需求。     

Current–voltage curve translation by bilinear interpolation

By means of bilinear interpolation and four reference current–voltage (I–V) curves, an I–V curve of a photovoltaic (PV) module is translated to desired conditions of irradiance and PV module temperature. The four reference I–V curves are measured at two irradiance and two PV module temperature levels and contain all the essential PV module characteristic information for performing the bilinear interpolation. The interpolation is performed first with respect to open‐circuit voltage to account for PV module temperature, and second with respect to short‐circuit current to account for irradiance. The translation results over a wide range of irradiances and PV module temperatures agree closely with measured values for a group of PV modules representing seven different technologies. Root‐mean‐square errors were 1·5% or less for the I–V curve parameters of maximum power, voltage at maximum power, current at maximum power, short‐circuit current, and open‐circuit voltage. The translation is applicable for determining the performance of a PV module for a specified test condition, or for PV system performance modeling. Copyright © 2004 John Wiley & Sons, Ltd.     

一种硅衬底镂空结构的圆形射频微电感

利用MEMS工艺以及硅的湿法刻蚀工艺制作了一种硅衬底镂空结构的圆形射频微电感，并研究了硅衬底背面减薄对射频微电感性能的影响，结果表明：微电感硅衬底经过局部刻蚀减薄后其自谐振频率上升，电感量的频率稳定性提高，而其最大Q值下降。     

基于二进小波变换的图像插值方法

介绍了基于二进小波变换的图像插值方法,并且对各种插值方法在不同域中的结果作了比较,主要是对最近邻插值、双线性插值和双三次插值几种方法在空间域、正交小波域、二进小波变换中作了比较.试验结果证明,基于二进小波变换的图像插值效果比较好,值得进一步深入研究.     

填丝TIG焊接Mo—Cu合金与18-8不锈钢接头的微观组织

采用填丝钨极氩弧焊（TIG）对Mo—Cu合金与18—8不锈钢进行焊接．采用金相显微镜、扫描电镜、显微硬度计及x射线衍射仪等对Mo—Cu／18—8接头的微观组织、显微硬度、元素分布及熔合区附近的物相组成进行分析．结果表明,Mo—Cu合金侧的熔合区为马氏体和奥氏体的混合组织,焊缝和18—8钢侧的熔合区为奥氏体和铁素体双相组...     

稀布阵综合脉冲孔径雷达旁瓣对消性能分析

定量分析了阵列孔径、干扰信号带宽、通道幅相误差以及Ａ／Ｄ变换器的量化噪声对大型稀布圆形阵列天线干扰对消效果的影响，介绍了稀布阵综合脉冲孔径雷达（ＳＩＡＲ）采用抽头延迟线以提高干扰对消性能的方法，并给出了数值计算与计算机模拟结果。     

Disparity field and depth map coding for multiview 3D image generation

In the present paper techniques are examined for the coding of the depth map and disparity fields for stereo or multiview image communication applications. It is assumed that both the left and right channels of the multiview image sequence are coded using block- or object-based methods. A dynamic programming algorithm is used to estimate a disparity field between each stereo image pair. Depth is then estimated and occlusions are optionally detected, based on the estimated disparity fields. Spatial interpolation techniques are examined based on the disparity/depth information and the detection of occluded regions using either stereoscopic or trinocular camera configurations. It is seen that the presence of a third camera at the transmitter site improves the estimation of disparities, the detection of occlusions and the accuracy of the resulting spatial interpolation at the receiver. Various disparity field and depth map coding techniques are then proposed and evaluated, with emphasis given to the quality of the resulting intermediate images at the receiver site. Block-based and wireframe modeling techniques are examined for the coding of isolated depth or disparity map information. Further, 2D and 3D motion compensation techniques are evaluated for the coding of sequences of depth or disparity maps. The motion fields needed may be available as a byproduct of block-based or object-based coding of the intensity images. Experimental results are given for the evaluation of the performance of the proposed coding and spatial interpolation methods.     

Integrated Time-to-Digital Converters Based on Interpolation

The main features of two time-to-digital convertersbased on interpolation are presented, together with some measurementresults. The first converter is based on digital delay line interpolatorsand has been implemented in a 1.2 µm CMOS process.It has a single-shot resolution of 1 ns (-value)and a nonlinearity less than ±50 ps in the measurementrange 5 to 500 ns. The power consumption of the circuit is 15mW. The second time digitizer has analog interpolators basedon time-to-voltage conversion and has been implemented in a 1.2 µm BiCMOS process. It has a single-shot resolutionof 50 ps and a nonlinearity less than 150 ps in the measurementrange 1 to 300 ns. The power consumption of this circuit is 200mW.