(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

电子浆料用超微细玻璃粉的等离子体改性

以六甲基二硅氧烷为单体,利用高频等离子体在超微细低熔磷酸盐玻璃粉体表面聚合硅氧聚合物包覆薄膜。用水和粉体压片之间的接触角变化表征了等离子体工艺参数对粉体表面能的影响。结果表明改性后粉体配制电子浆料的细度、黏度、流变特性提高显著。改性后可以改变或控制超微细粉体的表面能大小,从而可调节电子浆料的流变性和印刷适性。     

InGaN/GaN多量子阱LED的电特性研究

针对InGaN/GaN多量子阱LED,分析了占据能态高于势垒的载流子和低于势垒的载流子参与的电流输运机制,从而推导出对应能态电流输运机制下的电流-电压关系,以及理想因子与温度的变化规律.实验结果证实,在低注入强度下,由材料缺陷引入的深能级辅助隧穿输运机制占主导,电流电压特性符合相应的推导结果,随着注入强度的增大,参与扩散-复合输运机制的载流子逐渐增加,温度对输运机制的影响逐渐增大.     

电注入退火条件对铸造单晶硅PERC电池抗LID效应影响的研究

铸造单晶硅太阳电池由于性价比高,在晶硅太阳能市场占有越来越重要的地位。文章以B和Ga共掺杂的铸造单晶硅钝化发射和背面(PERC)电池为研究对象,采用现有工业生产的电注入退火方法,分别进行了260和180℃温度下的不同电注入条件退火处理和随后的光致衰减(LID)效应分析。分析表明:经180℃的电注入退火处理,电池效率的变化率为-0.64%,经60kW·h的光照后,电池效率比退火前降低了2.79%。而经过260℃的电注入退火处理后,电池效率提高1.12%,且经60kW·h的光照后,电池效率比退火前仅下降1.96%。这些结果说明,260℃的电注入退火条件更适用于铸造单晶硅电池的抗LID处理。     

TiO_2压敏电阻陶瓷元件等静压成型试验研究

采用干压及干压加等静压两种成型方法,通过对不同样品的电性能和焊接性能的比较,并通过SEM微观形貌的观察,研究了等静压成型对TiO2压敏电阻陶瓷元件的微观结构及电性能的影响。结果表明,经等静压成型的TiO2压敏电阻陶瓷的微观结构比较致密,气孔减少,元件的电压一致性和焊接性能得到较大的改善。     

基于低通滤波器的含有非正弦无功功率的计量

目前对非正弦无功电能计量的研究还很不完善。为了能够准确地理解和计算非正弦电路的无功功率,导出了非正弦电路的无功功率的计算公式,分析了公式中每一项的物理意义,并提出了一种基于低通滤波器的含有非线性无功功率的计量方法。依据IEC1268标准的技术条件给出了两种无功测试方法测量误差的试验数据,从而得出了低通滤波器方法测量无功功率是一种较好的方法的结论。     

Compositional, structural, optical and electrical characterization of CulnTe2 grown by the tellurization of stoichiometric Cu and in in the liquid phase

A new method to grow single crystals with stoichiometry close to 1:1:2 of CuInTe₂, an important member of the Cu-III-VI₂ family of semiconductors is described. This consists of tellurization in the liquid phase of stoichiometric Cu and In and later solidification under directional freezing. It is found from energy dispersive spectroscopy that the ingots obtained with the evaporation temperature (T_t) of Te at 590 and 635°C were very close to the ideal stoichiometry 1:1:2. Samples of all ingots obtained with T_t between 530 and 690°C, as studied by x-ray and differential thermal analysis, were of single phase having chalcopyrite structure and p-type conductivity. Optical and electrical characterization of different ingots were made. The acceptor ionization energy E_A and the density of states effective mass m _p ^* of the holes are estimated from the temperature dependence of the hole concentration p in samples of different ingots. m _p ^* = (0.78 ± 0.02) m_e agrees quite well with the reported value. From a combined analysis of the variation of E_A with p^1/3 and the knowledge of molecularity and valence stoichiometry of each sample, it is established that the shallow acceptor level observed in different samples with E_A (0) ⋍ 30 meV is due to V_In.     

谈谈我校现代电工电子实验室的教学与开放

我校自动化学院电工电子实验中心相继建成了“ＥＤＡ开放实验室”,“ＣＡＤ／ＣＡＩ实验室”和“ＰＬＣ实验室”三个现代电工技术实验室,并于１９９７年相继投入教学与开放,本文结合我们参与现代电工技术实验室教学与开放的实践,谈谈我们的感受与体会．     

不同有源层厚度的多晶硅薄膜晶体管特性研究

多晶硅薄膜晶体管(poly-Si TFT)因较非晶硅薄膜晶体管(a-Si TFT)相比具有更高的场效应迁移率而成为目前显示界研究的热点。在制备多晶硅薄膜及其TFT器件的过程中,发现不同厚度的多晶硅薄膜具有不同的电学特性。经分析,不同厚度的多晶硅薄膜有源层TFT器件也势必表现出不同的器件电学特性。为此,制备3种多晶硅薄膜有源层厚度的TFT器件,比较且优化器件的各种电学特性—场迁移率、阈值电压、亚阈值幅摆、电流开关比等,最后确定TFT器件有源层的最佳厚度。     

Hopf Bifurcation Analysis and Control for Electrical System of Military Vehicle

Electrical system of military vehicle is a typical parameterized nonlinear system where complicated bifurcations may exist and threaten its safe and stable operation. An algebraic criterion for Hopf bifurcation is presented briefly and applied to find Hopf bifurcation point of the electrical system with automatic voltage regulator （AVR） dynamics in military vehicle. Hopf bifurcation controllers are designed for this electrical system by using wash-out filter, linear feedback, non- linear feedback and their combination. The linear feedback control makes the system bring Hopf bifurcation at preferable parameter, the nonlinear feedback control modifies the type of the bifurcation, and the wash-out filter enhances the system damping, thus, the Hopf bifurcation is eliminated and the electrical system stability is ensured. Simulation results show the controller＇s validity.