ArF准分子激光立方氮化硼薄膜的制备

采用ＡｒＦ准分子脉冲激光沉积方法（ＰＬＤ），以六方氮化硼（ｈ－ＢＮ）作靶在Ｓｉ（１００）衬底上制备氮化硼薄膜。ＸＲＤ及ＦＴＩＲ透射谱测量表明生成的氮化硼薄膜是含有少量六方氮化硼结构的立方氮化硼（Ｃ－ＢＮ）．ＡＥＳ测量表明不同条件下生成的薄膜中Ｎ与Ｂ的相对含量是不同的，最大比例近乎为１：１，薄膜的维氏显微硬度ＨＶ最大值为１５８０ｋｇ／ｍｍ２。     

Laser-Assisted etching and metallisation of via-holes in polyethylene terephthalate

Experimental results are presented on via-hole etching in a thick (100 μm) film of polyethylene terephthalate (PET) with the help of a copper vapour laser (wavelength γ=510 nm, pulse duration 10 ns, repetition rate 8 kHz). The rate of via-hole formation is as high as 100 μms^?1. The effective coupling of the polymer film to the laser radiation is due to the formation of highly absorbing graphitised regions in the bulk of the film, which is initially transparent at the laser wavelength. The side walls of the hole can be metallised by simultaneous decomposition of a Pd(acac)₂ spun-on layer as a precursor for subsequent electroless Ni deposition. The activation of the inner surface of the hole is achieved as a result of the precursor vapour entering the hole during laser etching. The metallised via-hole provides a good electrical interconnection of the two sides of the PET film.     

长脉冲激光沉积原位生成YBaCuO超导膜

用长脉冲激光(脉冲宽度150μs,波长1.06μm)辐照高温烧结的YBa_2Cu_3O_(7-x)靶,在6Pa的氧气压强下,巳在(100)YSZ单晶衬底上原位生成YBa_2Cu_(?)O_(7-x)超导膜。衬底置于750℃的加热器上,衬底与靶之间的距离5cm,用该法制得的薄膜光亮坚实,正常态呈金属性,零电阻温度为84.7K。用XRD和SEM对薄膜进行了分析研究。     

MoS3/Al2O3复合材料的合成及其用于制备加氢催化剂的研究

采用液相反应沉积法合成MoS3/Al2O3复合材料,考察了不同反应温度、反应物浓度、反应时间、体系pH值及不同类型分散剂对MoS3在γ Al2O3载体表面沉积量的影响,并采用MoS3/Al2O3复合材料为助剂Co的第2载体制备了CoMo硫化态加氢脱硫催化剂;采用XRF、XRD、XPS、TEM、BET等分析手段对MoS3/Al2O3复合材料及CoMo硫化态和氧化态催化剂进行了表征。结果表明,采用乙醇为分散剂,钼酸钠摩尔浓度为01~1 mol/L、在反应温度85~120℃、体系pH值1~2、反应8~24 h条件下,可以合成MoS3沉积量为628%~868%（以MoO3质量分数计）的MoS3/Al2O3复合材料;与常规氧化态催化剂相比,所制备的CoMo硫化态催化剂具有更高的加氢脱硫活性。     

Application of Fuzzy c-means algorithm for the estimation of Asphaltene precipitation

One of problematic topics in petroleum engineering is Asphaltene precipitation issue which causes problems such as tubing plugging and formation damage due to temperature, pressure and composition changes so the notability of this issue increases. In the present investigation a novel Fuzzy c-means (FCM) algorithm was developed to predict precipitated asphaltene as function of dilution ratio, carbon number of precipitants and temperature for solving the problem. The results showed that this novel approach has great ability to predict precipitated asphaltene in terms of aforementioned parameters. The coefficients of determination (R²) for training and testing steps are calculated as 0.9828 and 0.9387 respectively. This great degree of accuracy expresses that the predicting algorithm has potential to be utilized as software for prediction of asphaltene behavior.     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

脉冲激光淀积高电流密度的YBCO超导带材

采用脉冲激光加辅助离子源的方法在长为６．０ｃｍ的ＮｉＣｒ合金基带上制备０．１３μｍ厚的Ｙ－ＺｒＯ２（ＹＳＺ）隔离层，再用脉冲激光在ＹＳＺ／ＮｉＣｒ带上制备１．５μｍ厚的ＹＢａ２Ｃｕ３Ｏ７－ｘ超导厚膜形成ＹＢＣＯ／ＹＳＺ／ＮｉＣｒ超导带材。实验测得在７７Ｋ，０Ｔｅｓｌａ下其临界电流密度为８．７５×１０４Ａ／ｃｍ２，超导转变温度为８８．６Ｋ。     

SBT铁电薄膜及其脉冲准分子激光制备

采用脉冲准分子激光沉积法在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上成功地制备了ＳＢＴ铁电薄膜，发现存在一个最佳沉积衬底温度约为４５０℃。在该温度下沉积的ＳＢＴ薄膜具有较饱和的方形电滞回线，其剩余极化Ｐｒ和矫顽电场Ｅｃ分别为８．４μＣ／ｃｍ２和５７ｋＶ／ｃｍ。     

MD膜驱剂的粘土稳定性研究Ⅰ.静态试验

粘土的膨胀和分散是引起地层伤害的两个重要因素。通过测定Zeta电位、XRD、悬浮液透光率、FT-IR考察了MD膜驱剂（MDFFA）对粘土稳定性的作用。结果表明，MDFFA的浓度低于0．3 mmol／g（以蒙脱土质量计）时，蒙脱土悬浮液Zeta电位的提高是由于膜驱剂分子的吸附改变了蒙脱土的层电荷；高于此浓度时，Zeta电位进一步提高是由于双电层的压缩。随着MDFFA浓度的增大，蒙脱土的完全膨胀层向部分膨胀层转化，并且经水冲洗、浸泡后，其XRD谱峰位置变化不大。较高浓度的MDFFA，能有效地抑制蒙脱土的分散，且不会形成对地层有害的絮凝体。MDFFA使蒙脱土层间水的含量明显降低。     

甲醇制烯烃反应副产物的生成规律分析

在流化床反应器中,以SAPO-34分子筛为催化剂,研究了反应温度对甲醇制烯烃反应副产物生成规律的影响。实验结果表明：随着TOS的增加,催化剂的积炭量增加,二甲醚选择性、CO2收率、CH4选择性增加,温度越高,增长速率越快;丙烷选择性和C5＋C6选择性随着TOS的增加而下降,温度越高,下降速率越快;乙烷选择性随着TOS的增加几乎保持不变。反应温度应控制在450℃～500℃之间,以减少CH4、CO2及积炭的量;通过适当提高线速、缩短反应物与催化剂的接触时间来进一步降低丙烷及某些高碳烃的量。反应中间体及烯烃聚合、芳构化都对积炭的生成有所贡献。