薄膜金属化低温共烧陶瓷基板的阻碍层对共晶焊的影响

讨论了低温共烧陶瓷基板薄膜金属化技术中,有效阻碍层的选择对基板共晶焊的剪切强度、互连阻抗、可焊性的影响。试验结果表明,Ti / Ni是一种高可靠性的阻碍层,且Ti / Ni / Au也是一种较理想的低温共烧陶瓷基板薄膜金属化结构。     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.     

基于共晶的MEMS芯片键合技术及其应用

叙述了MEMS封装中共晶键合的基本原理和方法,分析了Au-Si、Au-Sn、In-Sn等共晶键合技术的具体工艺和发展,并对其应用作了介绍.     

超分辨近场结构中二元共晶合金掩膜的工作机制

超分辨近场结构(super-RENS)技术通过在传统光盘结构中插入掩膜结构而实现近场超分辨,是目前最具实用化前景的超高密度光存储技术之一,其中掩膜层的近场光学特性是决定其光存储性能的关键。利用三维时域有限差分法(3D-FDTD)对合金掩膜的近场光强分布进行了数值仿真和分析,提出二元共晶合金薄膜在激光作用下形成的规则微结构可能是以其作为掩膜层的超分辨近场结构光盘产生较高信噪比(SNR)的原因。     

添加Cu和T6下Mg2Si/Al复合材料的组织与性能

采用铸造法制备原位自生亚共晶Al-10Mg₂Si复合材料,研究Cu和T6热处理对该复合材料组织与力学性能的影响。结果表明:适量Cu的添加能显著减小共晶Mg₂Si相晶粒尺寸,使其晶体结构由粗大的长条状和汉字状转变为细小的条状和纤维状;同时使针状的β-Al₅Fe Si相转变为细小的不规则富Cu颗粒。经T6热处理后,质量分数为1.5%的Cu复合材料中的共晶Mg₂Si相完全球化。质量分数为1.5%的Cu添加同时提高了材料铸态下的抗拉强度(R_m)、屈服强度(R_p0.2)和伸长率(A),达317、169 MPa和2.3%,比未添加Cu提高了42.2%、24.3%和53.3%;经T6热处理的R_m和R_p0.2值分别增至332、181 MPa,而A值保持不变。同时,材料由脆性断裂完全转变为韧性断裂。     

激光熔敷NiCrSiB合金组织与物相研究

报道了对ＮｉＣｒＳｉＢ激光熔敷合金中共晶组织的研究和观察，将共晶中的第二相标定为Ｎｉ３１Ｓｉ１２。γ′（Ｎｉ３Ｓｉ）相与γ（Ｎｉ，Ｃｒ）相共存于枝晶中，共晶包围着枝晶形成合金的基体，其上弥散分布着硬质强化相ＣｒＢ，Ｎｉ３Ｂ和Ｍ２３（ＣＢ）６。研究方法包括ＳＥＭ（扫描电子显微镜），电子探针，ＸＲＤ（Ｘ射线衍射），ＥＤＡＸ（能谱分析）和波谱分析等     

真空共晶焊接金属电极片变色问题改善工艺研究

多芯片组装共晶焊接技术是在芯片的端部和金属电极片之间添加焊料,在合适的温度、时间、真空度以及气氛下实现两表面的共晶物熔合,具有低空洞率、焊接强度高等优点.封闭的炉腔内焊料中的挥发物和氧气会造成金属电极片变色,且无法利用清洗剂去除.通过对炉腔内气氛、真空度等工艺进行试验研究,分析不同的真空度与金属电极片变色之间的关系.试...     

薄膜基板芯片共晶焊技术研究

共晶焊是微电子组装技术中的一种重要焊接工艺,在混合集成电路中得到了越来越多的应用。文章简要介绍了共晶焊接的原理,分析了影响薄膜基板与芯片共晶焊的各种因素,并且选用Ti/Ni/Au膜系和AuSn焊料,利用工装夹具在真空环境下通入氮、氢保护气体的方法进行薄膜基板芯片共晶焊技术的研究。试验证明:焊接基板金属化Au层厚度1.5μm,焊接压力为2kPa,焊接温度330℃,时间30s可有效地使空洞面积控制在10%以下。并在150℃高温贮存以及-65℃~150℃温度循环后对共晶焊接样品的剪切强度和接触电阻进行了试验。在可靠性试验后,样品的剪切强度满足GJB548B-2005的要求,接触电阻变化率小于5%。     

Numerical prediction of fraction of eutectic phase in Sn−Ag−Cu soldring using the phase-field method

A combination of macroscale solidification simulation and phase-field calculation is employed to predict the volume fraction of the eutectic phase in Sn-4.0 mass% Ag-XCu solder alloys (X=0.5–1.1 mass%). The solidification simulation incorporates the cooling rate in the phase-field simulation. We assume the residual liquid solidifies as eutectic phase when the driving force for the nucleation of Cu₆Sn₅ amounts to a critical value, which is determined based on the experimental data. Though the calculation results depend on the experimental data, the obtained fractions are about 40% for 0.5 mass% Cu and more than 90% for 1.1 mass% Cu alloy, which shows good agreement with the experimental data.     

过共晶Al－Si合金共生区激光表面处理

用２ｋＷ连续ＣＯ２激光对过共晶Ａｌ－１８Ｓｉ合金以不同能量密度和扫描速度进行快速熔凝处理。用扫描电镜、电子微区分析仪分析了微观结构。从计算机对Ａｌ－Ｓｉ合金ｆ－ｎｆ系统的非平衡理论计算所得的共生区及实验结果的分析可见，当能量密度和扫描速度决定的凝固条件处于共生区中部时，过共晶Ａｌ－Ｓｉ合金激光表面处理可以得到共晶间距低于２００ｎｍ的完全共晶结构。