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K. Chatty T. P. Chow R. J. Gutmann E. Arnold D. Alok 《Journal of Electronic Materials》2002,31(5):356-360
Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides.
While the field-effect mobilities were approximately 3–5 cm2/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm2/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved
threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized
MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed
oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample. 相似文献
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105.
本文介绍一种可将MSC-85型穆斯堡尔谱按KC标准/Intel Hex格式记录在音频盒式磁带上的谱数掘解调后,通过RS232C接口输进IBMPC微型计算机的谱仪离线数据转储技术。 相似文献
106.
引入自然对流换热系数 ,将固液蓄能数学模型简化为仅用能量方程加以描述。并通过实验测得相变过程的实际温度场 ,证明了自然对流固液相变换热的影响不可忽略 ,验证了固液相变界面移动速率随自然对流换热系数的增大而增大的定性关系 相似文献
107.
Ali Bayram Agah Uguz Ali Durmus 《Journal of Materials Engineering and Performance》2002,11(5):571-576
Three types of material whose fracture toughness tests were previously performed by using circumferentially notched bars,
namely (1) a dual-phase steel with three different morphologies; (2) an Al-Zn-Mg-Cu-wrought alloy; and (3) Al-Si-cast alloys
with three different Si contents, were investigated in terms of accuracy and reliability of the testing method. Also, the
advantages of using circumferentially notched bars for fracture toughness determination of metallic materials were discussed.
With the help of stress concentration factors, which are associated with the bluntness of the notch, correction factors for
the fracture toughness calculations are derived. The corrected fracture toughness values are found to be close to the uncorrected
ones, implying that the testing procedure is reliable. 相似文献
108.
Shu-Chu Ren Nelson N. Hsu Donald G. Eitzen 《Journal of research of the National Institute of Standards and Technology》2002,107(5):445-473
Pulsed ultrasonic techniques can be and have been used to examine the interface conditions of a bonded structure. To provide a theoretical basis for such testing techniques we model the structure as a layer on top of a half-space, both of different elastic properties, with various interface bonding conditions. The exact dynamic Green’s tensor for such a structure is explicitly derived from the three-dimensional equations of motion. The final solution is a series. Each term of the series corresponds to a successive arrival of a “generalized ray” and each is a definite line integral along a fixed path which can be easily computed numerically. Willis’ method is used in the derivation. A new scheme of automatic generation of the arrivals and ray paths using combinatorial analysis, along with the summation of the corresponding products of reflection coefficients is presented. A FORTRAN code is developed for computation of the Green’s tensor when both the source and the detector are located on the top surface. The Green’s tensor is then used to simulate displacements due to pulsed ultrasonic point sources of known time waveform. Results show that the interface bonding conditions have a great influence on the transient displacements. For example, when the interface bonding conditions vary, some of the first few head waves and regular reflected rays change polarities and amplitudes. This phenomenon can be used to infer the quality of the interface bond of materials in ultrasonic nondestructive evaluation. In addition the results are useful in the study of acoustic microscopy probes, coatings, and geo-exploration. 相似文献
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微机在应变测量中的应用,采用上位机和下位机组合方式.上位机为一台IBM-PC/XT微机,用于对数据进行后处理.下位机以Z80-CPU为控制器,由传感器、转换器、接口及外设等组成数据采集器,实施对应变、压力和位移等参数的采集、显示和打印(即数据的预处理).上位机和下位机之间的数据传输,采用串行的方式,通过RS-232接口完成.本文主要以应变的采集处理为例,介绍系统功能、硬件配置及软件设计. 相似文献