Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

A new precipitate phase in Al-4wt. % Cu thin-film interconnects

We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation of electron diffraction intensities suggests that the basis structure is isomorphous with Al₂Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its implications for electromigration reliability are discussed.     

Rapid analysis of polymer homologues and additives with SFE/SFC-MS coupling

A rapid and easy analysis method for polymers is presented. The method involves sample preparation by SFE, separation of the extracted compounds by SFC and simultaneous quantitative detection by FID, as well as identification of unknowns by MS. The applications illustrate how structural research work and routine polymer analysis can be done with this time saving method.     

硼酸使掺铁铝酸锂发光增强的现象

在硼酸存在下合成了掺铁铝酸锂荧光体,研究了在不同温度下硼酸加入量对荧光体发光强度的影响,并通过X射线粉末衍射和粒度分析,初步探讨了发光增加的原因。     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

树脂热解炭制备碳化硅晶须

用自制的配合醛树脂热解和炭源，用ＳＩＯ２超细汾作原，根据碳热还原原理，利用常规加热和微波加热两种方式，分别制备了直径在纳米级的ＳｉＣ晶须，Ｘ射线衍射、透射电检测结果表明：制备工艺和条件对ＳｉＣ晶须的性质有较大的影响。     

Pb（Sc1／2Ta1／2）O3铁电体的有序结构和介电性质）

通过铌铁矿预合成法制备Ｐｂ（Ｓｃ１／２Ｔａ１／２）Ｏ３（ＰＳＴ）陶瓷，经适当的热处理获得了钙钛矿化合物Ｂ位离子的高有序和高无序试样，ＰＳＴ陶瓷的介电性质研究结果表明，高有序试样（Ｓ＝０．７７）的居里温度为２９℃，并具有较低的介电常数表现出普通铁电体性质特征，而高元序试样（Ｓ＝０）具有很高的介电常数，并表现出明显的弥散性相转变和Ｔｍ的频率色散行为，即高介电常数的驰豫铁电体性质。文中还利用ＸＲＤ，ＳＥ     

中国橡胶工业崛起之思考

中国已经成为橡胶工业大国,不少产品名列世界前茅,橡胶工业已是占全国GDP 1%的制造业。从2000—2004年橡胶消耗量、汽车轮胎生产量、非轮胎制品用胶量等方面的统计数据中可以看出我国橡胶工业已经崛起,分析了崛起的原因,对存在的问题进行了思考,提出了解决的方法。     

Development of an integrated model for airflow in building spaces

In building energy simulation, an integrated modelling of airflow in the building needed. Therefore, in this paper two approaches are used for building energy simulation: zonal network for modelling of the building segments and Computational Fluid Dynamics (CFD) for modelling of the airflow. It is noted that a synchronize solution process is needed for the building and the CFD equation-sets. For this purpose an iterative procedure is used to corresponding solution of these equations.