倾斜放置二维数字阵列雷达天线参数优化

介绍了二维相控阵或二维数字阵列天线锥形扫描与俯仰、方位扫描时的坐标变换,重点阐述了倾斜放置二维相控阵或二维数字阵列天线按俯仰、方位扫描时的坐标变换关系,基于该坐标变换,得出倾斜放置二维平面相控阵或二维平面数字阵列天线扫描区域边界在变换域上呈椭圆形的结论。基于这样的结论,可以实现对阵面倾斜角度、几何参数的优化。     

小型化大面阵非制冷红外连续变焦光学系统设计

作为未来红外探测器的主流发展方向之一,大面阵红外探测器近年来的发展非常迅速。它的主要用途是在天体物理学、地球科学和行星科学等领域,并且是未来用于地球天气、气候描述以及空气污染检测的一个主要工具。随着面阵规格和材料尺寸的增加,器件的制作难度也越来越高。重点介绍了目前国际上最常见的制冷型红外探测器——HgCdTe红外探测器和InSb红外探测器。结合国内外的一些文献,总结了两类探测器的大面阵技术发展状态,并且重点介绍了当前世界上红外探测研究处于领先地位的主要公司的产品及技术水平。最后指出了大面阵红外探测器目前存在的主要问题。     

双层异质结碲镉汞甚长波红外焦平面探测器研究进展

报道了甚长波碲镉汞红外焦平面探测器的最新研究进展。采用水平液相外延In掺杂和垂直液相外延As掺杂技术生长p-on-n异质结材料,并基于湿法腐蚀、表侧壁钝化、In柱互连工艺,制备了第一支甚长波碲镉汞台面型焦平面器件。在60 K的工作温度下,该器件的截止波长达到14.28 μm,有效像元率为94.5%,平均峰值探测率达到8.98×10¹⁰ cm·Hz^1/2·W^-1。     

用于挠性驱动的短筒型压电振子研究

面内模态压电振子是压电驱动的一个重要分支,小型的面内模态压电振子研究较少。为了拓宽面内弯曲压电振子的应用,提出了一种短筒型压电振子,可用于挠性驱动。利用ANSYS有限元软件确立了压电振子的结构尺寸、工作模态及固有频率。振子外径䥺SymbolFC@30 mm,高度12 mm,且外圈均布36个2 mm高的齿形结构,用于放大振幅。结果表明,该结构能够很好地激发出两同频正交三阶面内弯曲工作模态。实验测得振子在B₀₃工作模态下具有同频正交性且谐振频率为27 140 Hz,与仿真结果吻合。通过实验验证了压电振子用于挠性驱动的可行性。     

Salient object detection via boosting object-level distinctiveness and saliency refinement

Many salient object detection approaches share the common drawback that they cannot uniformly highlight heterogeneous regions of salient objects, and thus, parts of the salient objects are not discriminated from background regions in a saliency map. In this paper, we focus on this drawback and accordingly propose a novel algorithm that more uniformly highlights the entire salient object as compared to many approaches. Our method consists of two stages: boosting the object-level distinctiveness and saliency refinement. In the first stage, a coarse object-level saliency map is generated based on boosting the distinctiveness of the object proposals in the test images, using a set of object-level features and the Modest AdaBoost algorithm. In the second stage, several saliency refinement steps are executed to obtain a final saliency map in which the boundaries of salient objects are preserved. Quantitative and qualitative comparisons with state-of-the-art approaches demonstrate the superior performance of our approach.     

热释电材料及其应用

对热释电材料进行了分类 ,对热释电材料、热释电传感器、热释电探测器的性能作了介绍 ,提出了一些改进热释电材料性能的方法 ,对热释电材料的研究现状和应用前景作了探讨。     

投影栅相位法三维形貌自动检测应用中的问题

本文针对投影栅相位法测量三维物体表面形貌技术,采用两光轴相交,且非远心投影系统产生的误差进行了分析并提出了修正方法,文中还提了了一种有效算法,利用卷积滤波技术实现频谱的自动移位。提高了图像处理的速度和形貌检测技术的自动化程度;最后给出了模拟和实验结果。     

红外成像制导中的三维目标识别

首先介绍了随机方位观察模型 ,在此基础上得到图像中的角度大小与目标模型中角度大小的对应关系 ,提出了图像中的角度大小的概率密度函数 ,然后根据最大似然比准则得到三维目标识别的统计决策规则 ,并应用该规则去识别红外成像制导中的几种具体目标 ,取得了比较好的识别效果 ,证明了所提方法在红外成像制导中的三维目标识别的有效性。     

脊加载环板行波管的理论与实验研究

脊加载环板行波管是一种频带相对较宽的大功率行波管 ,本文对脊加载环板慢波系统及其改进型进行了研究 ,理论与实验良好符合 ,实验表明脊加载环板慢波系统的改进型比脊加载环板慢波系统具有更宽的频带 ;同时对慢波系统采用等效线路模型 ,电子注采用二维圆环模型 ,研究了脊加载环板行波管的大信号特性 ,讨论了注波互作用的非线性效应。本文的结果将为脊加载环板行波管的设计提供理论基础。     

Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy (MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on runs of more than 15 consecutively grown layers. Etch pit density in the low 10⁵ cm⁻² and void density lower than 10³ cm⁻² are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 10¹⁴ to 10¹⁵ cm⁻³ range and mobility in excess of 10⁵ cm²/Vs at 77 K for epilayers with 9.5 μm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present dynamic resistance area products which reach values of 8 10³ Ωcm² for a biased voltage of −50 mV and a cutoff wavelength of 9.5 μm at 77 K. A 320 × 240 plane array with a 30 μm pitch operating at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent and can be independently addressed. Current voltage curves of 60 × 60 μm² photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 μm for the MWIR-1 and 5 μm for the MWIR-2.