快速成功实施农村数字电视整体转换的策略

结合海安农村地区数字电视整体转换的实践,简要介绍有线电视数字化整体转换的体会,提出一些如何在农村地区快速、成功实施整体转换的策略。     

贴片机X/Y轴快速高精度定位的实现

负载惯量和外界干扰是影响贴片机X,Y轴快速高精度定位的两个关键因素。本文针对负载惯量和外界干扰对控制性能的影响,提出了基于RBF神经网络的自适应滑模控制算法。利用RBF神经网络的万能逼近特性实现对外加干扰和被控对象模型信息的逼近,运用自适应控制算法计算前馈补偿量以补偿负载惯量和摩擦力对运动性能的影响,采用滑模控制算法以抑制其他不确定干扰对运动控制的影响。通过仿真分析可以得出,所采用的控制算法能够有效地补偿负载惯量和外界干扰对定位性能的影响,从而实现贴片机X,Y轴的快速高精度定位。     

Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs

The effects of post-process rapid thermal annealing (RTA) treatment after device fabrication on direct current, microwave and power performances of AlGaN/GaN high electron mobility transistors (HEMTs) with a gate-length of 0.2 μm were fully investigated. By 3 min post-process RTA treatment at 350 °C under N₂ atmosphere, the direct current (DC), radio frequency (RF) small signal and power performances of AlGaN/GaN HEMTs have been much improved. The output power, power gain and power added efficiency (PAE) of GaN HEMT device with gate wide of 1 mm increase from 37.09 dBm, 6.09 dB and 42.79% to 38.22 dBm, 7.22 dB and 67.3%. The post-process RTA after device fabrication has two merits. On the one hand, it improves passivation effect of SiN_x dielectric layer on AlGaN/GaN HEMT surface, suppressing RF current dispersion. On the other hand, it helps recover dry-etch damage at the Schottky metal/AlGaN interface, leading to reduction of reverse Schottky leakage current.     

一种高精度快速响应欠压锁定电路设计

针对传统欠压锁定(UVLO)电路结构复杂和响应速度慢的问题,设计了一种高精度的快速响应欠压锁定电路.该电路整体均由CMOS管组成,结构简单且易于实现.采用电流模控制技术,随电源电压呈二次方曲线变化的自偏置电流控制阈值电压的产生,有效提高了电路的响应速度.该欠压锁定电路基于0.18μm BCD工艺设计,并利用HSPICE进行仿真验证,当电源电压在0～5V区间变化时,输出电压翻转的上阈值门限为3.91 V,相应下阈值门限为3.82V,迟滞量为90 mV,温度在-40～125℃范围变化时,阈值门限电压容差仅为0.9μV,可实现输出电压的高精度转换,电路面积仅为15 μm×48μm.     

一种快速同步的时钟数据恢复电路的设计实现

时钟数据恢复(CDR)电路是通信传输设备中的重要部分,对于突发式的接收,基于锁相环的传统的CDR往往不能满足其快速同步的要求.对此,文章采用过采样方式基于FPGA设计实现了一种全数字化的155.52Mb/s下的CDR电路.理论分析、仿真和实验测试结果表明,该CDR电路可以有效地对相位变化实现快速同步,有很大的捕捉范围,且系统较锁相环便于集成.     

Sustainable 3D Structural Binder for High-Performance Supercapacitor by Biosynthesis Process

Flexible supercapacitors represent an attractive technology for the next generation of wearable consumer electronics as power sources but usually suffer from relatively low energy density. It is highly desired to construct high-performance electrodes for the practical applications of supercapacitors. Here, inspired by the natural structure of the spider web, an elaborate design of binder is reported through a biosynthesis process to construct flexible electrodes with both excellent mechanical properties and electrochemical performance. Through this strategy, a spider-web-inspired 3D structural binder enables large ion-accessible surface area and high packing density of active electrode material as well as efficient ion transport pathways. As a result, a high areal capacitance of 4.62 F cm^-2 and a high areal energy density of 0.18 mW h cm^-2 is achieved in the composite electrodes and symmetric supercapacitors, respectively, demonstrating a promising potential to construct flexible energy storage devices for diverse practical applications.     

A Novel Magnetic Hardening Mechanism for Nd-Fe-B Permanent Magnets Based on Solid-State Phase Transformation

Permanent magnets based on neodymium-iron-boron (Nd-Fe-B) alloys provide the highest performance and energy density, finding usage in many high-tech applications. Their magnetic performance relies on the intrinsic properties of the hard-magnetic Nd₂Fe₁₄B phase combined with control over the microstructure during production. In this study, a novel magnetic hardening mechanism is described in such materials based on a solid-state phase transformation. Using modified Nd-Fe-B alloys of the type Nd₁₆Fe_bal-x-y-zCo_xMo_yCu_zB₇ for the first time it is revealed how the microstructural transformation from the metastable Nd₂Fe₁₇B_x phase to the hard-magnetic Nd₂Fe₁₄B phase can be thermally controlled, leading to an astonishing increase in coercivity from ≈200 kAm⁻¹ to almost 700 kAm⁻¹. Furthermore, after thermally treating a quenched sample of Nd₁₆Fe₅₆Co₂₀Mo₂Cu₂B₇, the presence of Mo leads to the formation of fine FeMo₂B₂ precipitates, in the range from micrometers down to a few nanometers. These precipitates are responsible for the refinement of the Nd₂Fe₁₄B grains and so for the high coercivity. This mechanism can be incorporated into existing manufacturing processes and can prove to be applicable to novel fabrication routes for Nd-Fe-B magnets, such as additive manufacturing.     

退火对射频磁控溅射氧化锌薄膜性能的影响

采用射频磁控溅射技术在SiO2/Si上淀积高c轴取向的ZnO薄膜,在氧气和氩气的混合气氛、不同温度(400~900℃)下进行快速热退火处理。利用X-射线衍射(XRD)、原子力显微镜(AFM)、扫描电镜(SEM)和透射电镜(TEM)对薄膜结构、形貌与界面状态性能进行了分析。研究结果表明,ZnO薄膜的晶粒尺寸随着退火温度的升高而增大,衍射峰强度增强,峰位随之偏移;SEM分析显示薄膜呈柱状生长,表现出较好的c轴取向性;TEM分析表明ZnO与下电极Pt是呈共格生长,晶格匹配很好。     

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing (RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters. All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose level of 10¹⁴ to 2 × 10¹⁶ ions/cm². Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result, a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature are found to be in the range of 10¹⁶ ions/cm² and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation process, offering a guideline for dose monitoring and calibration of ion implantation process.     

仿晶体生长快速算法用于加速2D 静磁场设计中的参量扫描

为了加速二维静磁场设计中参量扫描的速度,本文提出仿晶体生长快速算法：网格空间不变,结构在网格空间中微动,利用前一次计算出来的结果,构造新的初解,以提高下一次有限差分法计算矢量磁位的迭代速率。该方法可以将扫描时间平均减少一半以上,并且计算结果与普通计算结果偏离很小。与同类软件相比,采用该方法的参量扫描和优化过程速度更快,也有潜力应用于其他复杂结构的优化过程。