A new stereological principle for test lines in three-dimensional space

A new principle is presented to generate isotropic uniform random (IUR) test lines hitting a geometric structure in three-dimensional space (3D). The principle therefore concerns the estimation of surface area, volume, membrane thickness, etc., of arbitrary structures with piecewise smooth boundary. The principle states that a point-sampled test line on an isotropic plane through a fixed point in 3D is effectively an invariant test line in 3D. Particular attention is devoted to the stereology of particles, where an alternative to the surfactor method is obtained to estimate surface area. An interesting case arises when the particle is convex. The methods are illustrated with synthetic examples.     

Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.     

Sintering studies of nano-crystalline zinc oxide

Sintering and grain growth of nano-crystalline undoped ZnO has been studied in detail over a wide range of temperature and holding time. Below 800 °C, sintering of over 70% theoretical density is not observed, irrespective of particle size. At 900 °C for 6 h, the nano-crystalline sample sinters to 99% of theoretical density whereas the density for as received sample is 93% of theoretical density. However, at 1300 °C or higher, the densification is found to be much faster and after a few hours becomes independent of holding time. Grain growth studies reveal a similar feature of attaining saturation over holding time. The average saturated grain size is found to be ∼1.5 and ∼2.2 μm at 800 and 900 °C, respectively, while at 1300 °C or higher, it is in between 12 and 13 μm.     

Growth of β-FeSi2 layers deposited from a molten salt

β-FeSi₂ layers have been successfully grown using a molten salt method for the first time. It was found that single phase and homogeneous β-FeSi₂ layers with a columnar domain structure can be grown on FeSi substrates. The layer thickness was demonstrated to be controllable by the growth temperature and time, and was diffusion controlled. It was shown that the layers were void- and crack-free compared to similar layers grown on Fe substrates: this difference is explained in terms of Fe diffusion. This vacuum-free simple growth technique is useful for the fabrication of large area semiconductor devices at low cost.     

Response of inertinites from some Australian coals to non-catalytic hydrogenation in tetralin

Inertinite concentrates from three Australian bituminous coals were hydrogenated at various temperatures ranging from 350 to 475 °C in the presence of tetralin without any added catalyst. Both conversion yields and microscopic observations of the benzene-extracted hydrogenation residues have revealed that the hydrogenation of the inertinite macerals becomes significant only > 400 °C, whereas the dissolution-hydrogenation of the accompanying vitrinite macerals occurs mainly between 350 and 400 °C. The major reaction pathway for the inertinite particles in the hydrogenation process appears to be one of initial mild carbonization followed by hydrogenation. A simplified reaction scheme is proposed which describes the reaction pathway involved in the hydrogenation of inertinite.     

Synthesis of selenium nanoparticles in the presence of silk fibroin

This paper describes a solution-phase approach to the synthesis of selenium nanoparticles by reducing selenious acid solution with ascorbic acid in the presence of silk fibroin. The monodispersed spherical selenium colloid particles obtained were very stable in silk fibroin solution and characterized by Atomic force microscopy and X-ray techniques. The influences of temperature and ultrasonication on the morphology of selenium nanoparticles were also discussed. The experiments showed that the selenium nanoparticles with various morphologies could be obtained under different temperatures and the appropriate ultrasonication time was 60 min. This result indicated that the silk fibroin molecules intimately associated with the surface of the selenium particles and controlled the growth particles.     

Intermediate order in tetrahedrally coordinated silicon: evidence for chainlike objects

In this report, we describe the nature of intermediate order in silicon as determined by recent measurements on thin films using transmission electron microscopy (TEM) and Raman scattering. The TEM images show in addition to the expected continuous random network (CRN), the presence of highly ordered quasi-one-dimensional “chain-like objects” (CLO's) that are 1–2 nm wide and tens of nm long that meander and show some evidence of cross-linking with each other. The presence of these objects correlate to a Raman feature centered at 490 cm⁻¹ whose width is 35–40 cm⁻¹, and is used to quantify the heterogeneity in terms of the CLO and CRN (=475 cm⁻¹ scattering) concentrations. The 490 and 35 cm⁻¹ values are consistent with bond angle deviations approaching 0°, and thus reinforces an association with the CLOs. We find that in reference quality a-Si:H (made using pure SiH₄), the CLO concentration is about 5 vol%, while in state-of-the-art material using high H₂ levels of dilution during processing, it increases to about 15%. Increased stability of such material to light-soaking is thus not mediated by a direct volumetric replacement of poor with high-quality components. Rather, an important characteristic of intermediate order in silicon is the low-dimensional aspect of its order, which allows it to influence more total volume than which it is itself composed. Consistent with these and other recent findings, we propose a tensegrity model of amorphous silicon.     

石蜡微胶囊中脲醛树脂壁材渗透性的研究

利用差示扫描量热法研究了石蜡微胶囊中脲醛树脂壁材对水及甲苯的渗透性 ,结果表明 ,水不能透过脲醛树脂壁材 ,而甲苯则易透过脲醛树脂壁材。因此 ,该石蜡微胶囊不能用于芳香族溶剂存在的场合。     

Modelling and analysis of 3-D arrangements of particles by point processes with examples of application to biological data obtained by confocal scanning light microscopy

Within the concept of point processes, a review is presented of quantities which can be used in studies of three-dimensional (3-D) aggregates of particles. Suitable characteristics and estimators are given for both unmarked and marked point processes. To demonstrate the feasibility of such quantitative approaches, an application in histology, dealing with 3-D arrangements of cell nuclei in rat liver, is described. Using a confocal scanning light microscope, 3-D images are recorded and image analysis used to obtain the coordinates of the centroid, together with the volume and DNA content, of each cell nucleus. Examples of results are given, using both unmarked and marked point processes. In the latter case, cell type, nuclear volume and ploidy group are suitable marks.     

Measurement of specimen charging in scanning electron microscopy with a kelvin probe

A vibrating Kelvin probe in form of a platinum wire loop is used to measure the surface potential U_s on electron-irradiated free-floating metal and insulator specimens as a function of electron energy E. This allows an accurate measurement of the critical electron energy E₂ for no charging. At energies below E₂, the positive charging increases with decreasing energy to U_s=2–5 eV at E=0.5 keV and switching off the collector bias of the Everhart-Thornley detector. A two-to threefold increase of U_s is observed when the bias is switched on. For E > E₂, the strong increase of a negative surface potential can be measured. Insulating films free-supported on a conductive substrate show a steep decrease to small positive and negative U_s when the film thickness becomes lower than the electron range at a critical energy E₃ > E₂. At insulating specimen the temporal decrease of charging can be measured when the electron beam is switched off.