Second-law-based thermodynamic analysis of two-stage and mechanical-subcooling refrigeration cycles

Thermodynamic analysis of HFC-134a vapor-compression refrigeration cycles is investigated by both the first and second laws of thermodynamics. Second-law analysis is carried out for both two-stage and mechanical-subcooling refrigeration cycles. The analysis is performed on each of the system components to determine their individual contribution to the overall system irreversible losses. It is found that most of the losses are due to a low compressor efficiency. Irreversibilities of expansion valves and condenser are also significant. In addition, it is shown that the optimum inter-stage pressure for two-stage and mechanical-subcooling refrigeration systems is very close to the saturation pressure corresponding to the arithmetic mean of the refrigerant condensation and evaporation temperatures. These results are compared with the existing practice in the industry. Furthermore, theoretical results of a two-stage refrigeration system performance are also compared with experimental values for a CFC-22 system.     

Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction

We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of 10⁴ A/cm² is estimated considering the effect of current pulse width.     

M8011H16铝合金防盗盖板生产工艺研究

研究了元素含量变化对8011铝合金防盗盖板综合性能的影响，在8011合金中改变Cu、Mn元素含量后可提高防盗盖板的强度，同时研究了烘烤处理后的强度变化问题。本文研究出了8011铝合金防盗盖板新的生产工艺制度。     

液氮制冷低气压试验箱的仿真设计

在采用液氮制冷的低气压试验箱的设计中,用常规工程设计方法计算的降温过程冷负荷过大,从而导致真空系统设计容量过大。本文采用分布参数模型对试验箱低气压条件下降温过程的冷负荷进行了精确仿真模拟,以此作为真空系统容量设计的基础,减小了设计规模,取得了良好的效果。     

Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes: A comparative study

Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaN single-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range and as a function of injection current. When the necessary forward bias conditions to get a certain current level are different, it is found that the anomalous EL quenching previously observed below 100 K for the SQW diodes strongly changes and shows a striking difference between the blue and green SQW diodes. This unusual EL evolution pattern is attributed to both internal and external fields, suggesting the importance of the internal piezoelectric field effects on the efficient carrier capture processes by localized tail states within the SQW under the presence of high-density misfit dislocations.     

星间激光通信技术进展与趋势

较详细地评述了目前国外卫星间光通信技术研究的现状．根据关键单元技术的进展情况，总结了未来星间光通信系统的发展趋势。     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

半导体激光器用铷D2线光电流谱稳频

本文报导了用铷原子７８００Ａ光电流谱来稳定半导体激光器的工作，在光电流谱线的中部发现了有利于稳频的凹陷，将半导体激光器频率锁定在凹陷的中央，估算的频率稳定度为１ＭＨｚ。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

新型蓝绿发光材料ZnSe／BeTe超晶格的能带剪裁

由于器件的快速退化，101.5小时似乎成了Znse基蓝绿色半导体激光器难于逾越的寿命极限。分析退化机制，发现在强电流注入的半导体激光器中，热退化具有重要影响。研究表明，用作载流子限制层的宽带Ⅱ-Ⅵ族四元合金（如ZnMgSSe）只能对ZnSe中的电子有效地限制，无法对空穴很好地限制;而对BeTe，却只能对空穴进行有效的限制，无法对电子很好地限制。这导致ZnSe（或BeTe）活性层空穴（或电子）漏电发热，引起退化。本文提出以ZnSe／BeTe超晶格为蓝绿发光层，并用包络函数理论具体计算了阱宽、垒宽对载流子能级的不同影响，考察了ZnSe、BeTe厚度比和超晶格周期对带隙、载流子限制能力的调节。为研制新型长寿命蓝绿色半导体激光器提供了一条新的途径。