FEM model of the ohmic resistance of IP-SOFCs

In the present work, the ohmic resistance of an integrated planar-SOFC (IP-SOFC) has been evaluated by developing a model whose equations have been solved numerically through an FEM method. The model allows to estimate the distribution of voltage and current density in the cell. A comparison between simulated and experimental data of area specific resistance is reported, which shows satisfactory agreement. The mathematical model has also been used to carry out some parametric studies for optimisation purposes. Indeed, a reduction in cell pitch length and an increase in electrode thickness are predicted to lead to a reduction in ohmic losses in IP-SOFCs.     

Synthesis and applications of heterobifunctional poly(ethylene oxide) oligomers

Poly(ethylene oxide) (PEO) oligomers are employed extensively in pharmaceutical and biomedical arenas mainly due to their excellent physical and biological properties, including solubility in water and organic solvents, lack of toxicity, and absence of immunogenicity. PEO can be chemically modified and reacted with, or adsorbed onto, other molecules and surfaces. Sophisticated applications for PEO have increased the demand for PEO oligomers with tailored functionalities, and heterobifunctional PEOs are often needed. This review discusses the synthesis and applications of heterobifunctional PEO oligomers possessing amine, carboxylate, thiol, and maleimide functional groups.     

Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films

Amorphous SiN_x:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiN_x:H as a function of temperature between 100 and 420 K. The electron drift mobility of a set of SiN_x:H samples has been determined from their steady-state photoconductivity and response time measurements. The results suggest that electron drift mobility of the samples was nearly unchanged for a low nitrogen content. Two samples containing lowest nitrogen showed higher photoconductivity than that of unalloyed sample within a temperature range including the room temperature.     

纳米涂料用金属氧化物粉体材料的开发

介绍了纳米金属氧化物的制作技术，纳米粉末团聚问题的解决以及纳米金属氧化物用于涂料中所引起的神奇功能。同时综述了国内外开发纳米涂料的现状。     

Photocatalytic degradation of methyl tert‐butyl ether (MTBE) in contaminated water by ZnO nanoparticles

BACKGROUND: Over the past several decades methyl tert‐butyl ether (MTBE) as additive to gasoline, intended to either boost ratings of fuel or to reduce air pollution, has been accepted worldwide. Since MTBE has high water solubility, the occurrence of fuel spills or leaks from underground storage tanks or transferring pipeline has led to the contamination of natural waters. In this study the degradation of aqueous MTBE at relatively high concentrations was investigated by a UV‐visible/ZnO/H₂O₂ photocatalytic process. The effects of important operational parameters such as pH, amount of H₂O₂, catalyst loading and irradiation time were also investigated. Concentration of MTBE and intermediates such as tert‐butyl formate and tert‐butyl alcohol were measured. RESULTS: Time required for complete degradation increased from 20 to 150 min when the initial concentration was increased from 10 to 500 mg L^?1. The first‐order rate constants for degradation of MTBE were estimated to be 0.183–0.022 min^?1 as the concentration increased from 10 to 500 mg L^?1. Study of the overall mineralization monitored by total organic carbon analysis showed that at an initial concentration of 100 mg L^?1 MTBE complete mineralization was obtained after 100 min under UV‐visible/ZnO/H₂O₂ photocatalysis. CONCLUSION: The data presented in this paper clearly indicated that UV‐visible/ZnO/O₂ as an advanced oxidation process provides an efficient treatment alternative for the remediation of MTBE‐contaminated waters. Copyright © 2008 Society of Chemical Industry     

Cu-Cr合金高温氧化行为分析

该文用热分析天平，结合金相、X射线衍射(XRD)、扫描电镜(SEM)和能谱(EXD)研究了Cu—Cr合金在不同温度下的氧化行为。结果表明，Cu—Cr合金在700℃-900℃氧化符合抛物线规律，其最外层氧化膜为CuO，内层为Cu2O和Cr2O3，铬有助于提高合金的抗氧化能力。     

Influence of deposition parameters on hole mobility in polymorphous silicon

Time-of-flight transient photoconductivity measurements reveal a monotonic increase with the deposition pressure in the hole mobility in polymorphous silicon for samples deposited under hydrogen dilution. With helium dilution, a maximum mobility that matches the highest value from H-dilution samples is measured at the intermediate pressure of 1.4 Torr. The deposition rate of those samples is twice the rate for the H-dilution ones. For the samples with the best hole mobilities, the valence-band tail is comparable to the one of standard hydrogenated amorphous silicon.     

Synthesis of silicon oxynitride by infiltration-mediated combustion

Silicon oxynitride Si₂N₂ O was synthesized from a mixture of Si, SiO₂, and Si₃N₄ by infiltrationmediated combustion in nitrogen gas. The chemical/phase composition of product and process parameters (temperature and burning velocity) were studied upon variation in charge composition and initial pressure of gas reagent. Parameters of the reaction yielding single-phase Si₂N₂O have been optimized.      

Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated.