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51.
介绍了太阳能热风发电的产生背景、技术原理和特点。太阳能热风发电能够实现由太阳能到空气动能,最终到电能的转变,具有环保无污染、运行维护简单、缓解常规能源消耗等特点。简要介绍世界上第1座试验性质的太阳能热风发电站。对太阳能热风发电技术相关研究历程从试验研究和理论研究2个方面做了综述,重点介绍了澳大利亚电站的建设进展及最新相关学术研究进展,包括过渡段理论及试验研究、系统数值模拟和太阳能热风发电技术在高山地区的应用等。介绍我国太阳能资源情况,指出我国太阳能资源丰富,适合建造大型太阳能热风发电站。 相似文献
52.
水文自动测报系统若配备有线/无线(GSM,GPRS)双通道,可提高系统的可靠性,保证系统的畅通。然而,有线组网方式最致命弱点是防雷能力差,针对防雷问题,在实践中探讨其有效途径,论述接地装置的设计、安装中应注意的几个问题,并介绍在实践中电话线防雷从一级防护发展到三级防护,提高防雷的效果,有待在实践中,再认识,再提高。 相似文献
53.
Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 108 times higher than that of a nongradient SiC ceramic. 相似文献
54.
Janne Halme Minna Toivola Antti Tolvanen Peter Lund 《Solar Energy Materials & Solar Cells》2006,90(7-8):872-886
Electrochemical impedance spectroscopy was used to determine the effective charge transfer resistances of porous dye-sensitized solar cell counter electrodes prepared by low-temperature spray deposition and compression of conductive carbon and platinized Sb-doped SnO2 powders on indium tin oxide-coated plastic substrates. The charge transfer resistances were 0.5–2 and 8–13 Ω cm2, respectively, when using 3-methoxypropionitrile as the electrolyte solvent. The manufacturing method used lends itself to produce mechanically stable and even-quality electrodes in an easy and fast manner. 相似文献
55.
56.
电荷耦合图像传感器在细线直径测控系统中的应用 总被引:1,自引:0,他引:1
张士勇 《工业仪表与自动化装置》2003,(4):31-32
文中给出了一个以氟化氪固体激光器做光源,以电荷耦合图像传感器为光屏,应用夫朗禾费衍射原理,实现对细丝直径在线检测自动控制。该方案对相关企业质量控制的自动化是有意义的。 相似文献
57.
58.
In this work we conceived a model of a multilayer solar cell composed by four layers of opposite conductivities: an n-type 6H-SiC used as a frontal layer to absorb high energy photons (energy gap equals 2.9 eV), a p-type Si layer, an n-type Si layer and a p-type SiGe back layer to absorb low energy photons (Si0.8Ge0.2 with an energy gap equal to 0.8 eV). The impurity concentration in every layer of the model is taken equal to 1017 cm−3 to ensure abrupt junctions inside the cell. The optical properties of the separate layers have been fitted and tabulated to be used for thin films devices numerical simulation. We developed the equations giving the minority carrier concentration and the photocurrent density in each abscissa of the model. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM0 solar spectrum. The results of simulation showed that the optimized structure could deliver, assuming 105 cm/s surface recombination velocity, a photocurrent density of more than 53 mA/cm2, which represents 88.3% of the ideal photocurrent (59.99 mA/cm2) that can be generated under AM0 solar spectrum. 相似文献
59.
引入空分设备“有效产品成本”概念,以气体成本算法和液体成本算法对空分设备正常产品单位成本和有效产品单位成本进行了比较,举例计算了液化装置的产品成本,提出利用“有效产品成本”概念来组织空分设备生产。 相似文献
60.
Suwaree Suraprapapich Supachok Thainoi Songphol Kanjanachuchai Somsak Panyakeow 《Solar Energy Materials & Solar Cells》2006,90(18-19):2968-2974
InAs self-assembled quantum dots (SA-QDs) were incorporated into GaAlAs/GaAs heterostructure for solar cell applications. The structure was fabricated by molecular beam epitaxy on p-GaAs substrate. After the growth of GaAs buffer layer, multi-stacked InAs QDs were grown by self-assembly with a slow growth rate of 0.01 ML/s, which provides high dot quality and large dot size. Then, the structure was capped with n-GaAs and wide band gap n-GaAlAs was introduced. One, two or three stacks of QDs were sandwiched in the p–n heterojunction. The contribution of QDs in solar cell hetero-structure is the quantized nature and a high density of quantized states. I–V characterization was conducted in the dark and under AM1 illumination with 100 mW/cm2 light power density to confirm the solar cell performance. Photocurrent from the QDs was confirmed by spectral response measurement using a filtered light source (1.1-μm wavelength) and a tungsten halogen lamp with monochromator with standard lock-in technique. These experimental results indicate that QDs could be an effective part of solar cell heterostructure. A typical I–V characteristic of this yet-to-be-optimized solar cell, with an active area of 7.25 mm2, shows an open circuit voltage Voc of 0.7 V, a short circuit current Isc of 3.7 mA, and a fill factor FF of 0.69, leading to an efficiency η of 24.6% (active area). 相似文献