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31.
In this paper, we examine, both experimentally and theoretically, the kinetics of formation and microstructure of product
phases in thin film reactions, using the Nb/Al and Ti/Al systems as our prototypes. The results of calorimetry and microscopy
studies are interpreted using simple kinetic and morphology models. In particular, the kinetic models employed here focus
on the nucleation and growth components of the phase formation process and the morphology models provide a starting point
for the classification of product grain structures.
An erratum to this article is available at . 相似文献
32.
提出了溅射-气体-聚集共沉积制备金属/金属(介质)复合团簇镶嵌薄膜的新方法,并利用该方法成功地在方华膜衬底上制备了系列Fe/Ag及CaF2复合团簇镶嵌薄膜样品。透射电镜分析结果表明,样品中Fe(Cu)团簇都较好地镶嵌于Ag(CaF2)基质中,其结构为两种材料的多晶共存形态。进一步分析发现,与块材相比,Fe/Ag样品中Fe团簇晶格常数呈现出不同程度的收缩,而Cu/CaF2样品中Cu团簇晶格常数则呈现出不同程度的膨胀。运用附加压力的模型对该现象进行了解释。 相似文献
33.
34.
35.
薄膜干涉型光学全通滤波器的设计与分析 总被引:1,自引:0,他引:1
设计并分析了用于多信道色谱补偿的薄膜Gires-Tournois干涉仪(GTI)型光学全通滤波(OAPF),讨论了反射镜的膜层结构对器件 的群延迟谱和反射谱的影响,。以及大角度入射引起的偏分离现象和幅度畸变现象,给出了单级和多级串拉OAPF的初步设计结果。 相似文献
36.
A mathematical model of evaporation process from a laminar falling liquid film on a vertical plate of constant temperature is presented. The model is developed with and without interfacial shear stress due to the vapor flow at the liquid film surface. The vapor pressure drop, vapor exit velocity and cooling rate are calculated for different liquid mass flow values. It is shown that lower liquid mass flow produces higher cooling rate. The results also show that the interfacial shear stress has a considerable negative effect on the cooling rate. It is proved that there exists an optimum distance between the plates, which gives the maximum volumetric cooling rate. 相似文献
37.
The dye-sensitized TiO2 complex films were prepared by the dye coat onto TiO2 surfaces,and the sensitizing mechanism and adsorption properties of the dye-sensitized TiO2 complex films were inverstigated.The influence of the application conditions of dye adsorbed on TiO2 films on the amount of dye adsorption was discussed.Experimental results show that the concentration,the temperature of dye solutions and the dipping time of TiO2 films in the dye solutions have a significant influence on the amount of dye adsorption.Cell test indicates that the conversion efficiency of light to electricity increases with the amount of dye adsorption. 相似文献
38.
Kiyotaka Wasa 《Bulletin of Materials Science》1993,16(6):643-663
Sputter deposition is currently being widely used in the microelectronics industry for the production of silicon integrated
circuits. Recently interest has been focused on sputter deposition as a new materials processing technique. The highly energetic
sputtered atoms enhance crystal growth and/or sintering during film growth. This results in lowering of the growth temperature
of high temperature materials including cubic diamonds. Single crystals of complex ceramics materials could be prepared by
sputter deposition through epitaxial growth process. Atomically controlled deposition using multi-target sputter enables to
make man-made superlattice including high-T
C superconductors of layered perovskite. At present sputter deposition is one of key materials technologies for the coming
century. 相似文献
39.
对几种增黑剂进行了筛选实验研究,选用了两种增黑剂组合使用,提高了遮盖力,使医用X光胶片涂布银量由原业的9g/m2降到了6.8g/m2,与美国医用X光胶片涂布银量(6.7g/m2)相当,照相性能不低于国产医用X光胶片。 相似文献
40.
Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face. 相似文献