润滑油用纳米TiO2的表面改性及自修复性能研究

采用油酸对纳米TiO2进行表面改性，使其稳定分散于基础油中。利用HQ-1摩擦磨损试验机考察纳米TiO2的自修复性能，并探讨其自修复机理。试验结果表明，经改性后的纳米TiO2粉体作为润滑添加剂具有良好的分散稳定性、减摩抗磨性和自修复性。     

RL-2催化剂在润滑油高压加氢装置上的催化性能

中石油克拉玛依石化有限责任公司在2018年8月全厂大检修期间将RL-2催化剂应用于Ⅰ套润滑油基础油高压加氢装置第一段加氢反应器，经过硫化及初活稳定处理后转入正常工业生产。应用初期，在保证产品质量合格的前提下，RL-2催化剂能够快速进入催化活性稳定期，表现出良好的催化活性。各原料切换生产过程中，RL-2催化剂表现出良好的原料适应能力。通过近一年的工业生产跟踪，RL-2催化剂表现出良好的活性稳定性，且加工各原料方案下的润滑油收率均维持在较高水平。     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

多晶硅薄膜晶体管RPI模型的直流参数提取

多晶硅薄膜晶体管(TFT)在有源液晶显示器中的应用充分显示了它的性能优点。对多晶硅TFT进行模型分析和参数提取是理解多晶硅TFT工作原理和指导制备的有效途径。归纳并讨论了多晶硅薄膜晶体管RPI模型直流参数的提取策略。此参数提取步骤简单,并能准确地提取所有工作区的基本直流参数,如阈值电压、漏源区串联寄生电阻、有效沟道长度、迁移率等。参数提取的方法将为RPI模型的电路仿真提供有益的参考。最后,提出了改进RPI模型参数提取策略的方向,包括提高泄漏电流参数、迁移率参数的准确度等。     

高性能ZnSnO∶Li/ZnSnO双有源层TFT电学性能的研究

双有源层以迁移率高、开关比高、大面积均匀性好等优点成为近年研究热点。采用射频磁控溅射方法,制备了ZnSnO∶Li/ZnSnO薄膜晶体管(TFT),对其电学特性进行了测试,并研究了器件迁移率提高的原因及其内在的微观机制。研究发现,ZTO∶Li/ZTO TFT表现出了良好的电学特性,其场效应迁移为率为13.98 cm²/(V·s),亚阈值摆幅为0.84 V/dec,开关比为1.13×10⁹。通过XPS对其薄膜进行分析发现,Li的引入导致薄膜中氧和金属结合键的浓度增加,氧空位浓度减少,从而使得TFT的迁移率增大,开关比增大,亚阈值摆幅减小。     

Photonic devices based on thin-film lithium niobate on insulator

Lithium niobate on insulator(LNOI)is rising as one of the most promising platforms for integrated photonics due to the high-index-contrast and excellent material properties of lithium niobate,such as wideband transparency from visible to mid-infrared,large electro-optic,piezoelectric,and second-order harmonic coefficients.The fast-developing micro-and nanostructuring techniques on LNOI have enabled various structure,devices,systems,and applications.In this contribution,we review the latest developments in this platform,including ultra-high speed electro-optic modulators,optical frequency combs,opto-electro-mechanical system on chip,second-harmonic generation in periodically poled LN waveguides,and efficient edge coupling for LNOI.     

非晶硅薄膜晶体管的泄漏电流模型

当对a-Si:H TFT施加较大的漏-栅电压时,其泄漏电流主要取决于空穴在漏端耗尽区内的产生过程以及被有源层内中立陷阱捕获的过程.基于价带空穴和被陷阱所捕获空穴的一维连续性方程,推导出空穴在有源层内纵向传导的逃逸率.通过描述漏端耗尽区内空穴的产生率以及在a-Sic H层内空穴传导的逃逸率,建立了a-Si:H TFT的泄漏电流模型,并进行了相应验证.     

可生物降解润滑油添加剂哌嗪衍生物的合成及性能评定

选用六水合哌嗪为母体,二氯甲烷为溶剂,三乙胺为缚酸剂,正己胺、十二胺、氯乙酰氯为原料,合成新型可生物降解润滑油添加剂1,4-双（二硫代甲酸乙酰正己胺）哌嗪和1,4-双（二硫代甲酸乙酰十二胺）哌嗪;采用FT-IR,1HNMR,TG手段对合成产物进行结构表征及对产品热稳定性进行测试。以菜籽油为基础油,采用四球摩擦磨损试验机考察合成添加剂的抗磨性能,并对其进行可生物降解性测定。结果表明：合成产品与预测结构相同,热分解温度最低为305 ℃,与菜籽油的溶解度高达2.58%（质量分数）,1,4-双（二硫代甲酸乙酰十二胺）哌嗪具有较好的抗磨性能,1,4-双（二硫代甲酸乙酰正己胺）哌嗪具有较好的减摩性能,两者均具有优异的可生物降解性能（BDI大于80%）。     

SQM-OTFT: A compact model of organic thin-film transistors based on the symmetric quadrature of the accumulation charge considering both deep and tail states

A physically-based compact model of organic thin-film transistors suitable for CAD simulators is proposed. It is worked out by means of a newly developed and particularly simple form of the charge-sheet model: the symmetric quadrature of the accumulation charge. The model is based on the variable-range hopping and accounts for both deep and tail states. It is simple, symmetric, accurately accounts for the below-threshold, linear, and saturation regimes via a unique formulation. The symmetric quadrature is accurate within 5% in all regions of operation and the resulting current model is suitable both for p- and n-type transistors. The model leads to a significant simplification of the drain current and of the quasi-static expressions of the terminal charges based on the Ward–Dutton partition. Finally, the symmetric quadrature leads to an explicit and analytically tractable solution for the surface potential as a function of position in the device channel that can be extremely useful to implement advanced physical effects.     

CCLink现场总线技术在调和罐变频控制中的应用

现场总线控制系统（FCS）作为数字化、网络化的新一代控制系统正越来越多地应用到各行各业中。给出了CCLink现场总线控制系统的基本定义、网络结构,还通过CCLink网络在调和罐变频控制中的应用给出了具体的设计方法和步骤,并结合PID实现了对多个调和罐的液位控制。