薄膜金属化低温共烧陶瓷基板的阻碍层对共晶焊的影响

讨论了低温共烧陶瓷基板薄膜金属化技术中,有效阻碍层的选择对基板共晶焊的剪切强度、互连阻抗、可焊性的影响。试验结果表明,Ti / Ni是一种高可靠性的阻碍层,且Ti / Ni / Au也是一种较理想的低温共烧陶瓷基板薄膜金属化结构。     

Effects of microstructural evolution and intermetallic layer growth on shear strength of ball-grid-array Sn-Cu solder joints

The shear strength of ball-grid-array (BGA) solder joints on Cu bond pads was studied for Sn-Cu solder containing 0, 1.5, and 2.5 wt.% Cu, focusing on the effect of the microstructural changes of the bulk solder and the growth of intermetallic (IMC) layers during soldering at 270°C and aging at 150°C. The Cu additions in Sn solder enhanced both the IMC layer growth and the solder/IMC interface roughness during soldering but had insignificant effects during aging. Rapid Cu dissolution from the pad during reflow soldering resulted in a fine dispersion of Cu₆Sn₅ particles throughout the bulk solder in as-soldered joints even for the case of pure Sn solder, giving rise to a precipitation hardening of the bulk solder. The increased strength of the bulk solder caused the fracture mode of as-soldered joints to shift from the bulk solder to the solder/IMC layer as the IMC layer grew over a critical thickness about 1.2 m for all solders. The bulk solder strength decreased rapidly as the fine Cu₆Sn₅ precipitates coarsened during aging. As a consequence, regardless of the IMC layer thickness and the Cu content of the solders, the shear strength of BGA solder joints degraded significantly after 1 day of aging at 150°C and the shear fracture of aged joints occurred in the bulk solder. This suggests that small additions of Cu in Sn-based solders have an insignificant effect on the shear strength of BGA solderjoints, especially during system use at high temperatures.     

Application of an asymmetrical four point bend shear test to solder joints

The asymmetrical four-point bend shear (AFPB) test method was used to measure the shear strength and creep properties through the stress relaxation experiments using three different Pb-free solder joint compositions in an assolidified condition. Since it was difficult to shear the uniform specimens and the local bending usually occurs at the inner loading points, the notches were introduced at the joint line to preferentially weaken this region. The stress analysis by finite element modeling showed that the straight notches transform the parabolic shear stress distribution in the uniform specimen into a relatively uniform shear distribution along the bond line in the notched specimens. Therefore, the shear strength results from the notched specimens are expected to be much more accurate. Experiments showed that both the Sn-3.6Ag-1Cu (wt.%) and Sn-3.6Ag-1Cu-0.45Co joints have superior strength and creep properties as compared to the Sn-3.5Ag joint. However, there was no statistical difference between the shear strength of the Sn-3.6Ag-1Cu and Sn-3.6Ag-1Cu-0.45 Co joints. Moreover, the difference between the creep resistance of these two types of joints was small.     

Influence of doping on the dynamical properties of III–V–N by Raman scattering, infrared absorption and model calculations

In the framework of a rigid-ion model and using realistic Greens function theory, we have studied systematically the influence of doping on the lattice dynamics of III–V-nitrides. Our theoretical analysis is based on a sound physical appeal for the perturbation caused by different dopants in compound semiconductors. After analyzing the dynamical behavior for two sets of impurities with closest masses occupying Ga- and As-sites in GaAs, we have proposed simple empirical relationships providing corrections to the impurity–host interactions for isoelectronic defects and for dopants carrying static charges. Despite the simplicity of perturbation models, our Greens function theory provided results in good agreement with the recent Fourier-transform infrared (FTIR) absorption data for the magnitude and splitting of N-isotopic shifts of localized vibrational modes in GaAs. With high-resolution FTIR spectroscopy, we strongly believe that the ¹⁴N_As-related broad local mode (471 cm⁻¹) in GaAs can be resolved into fine structures due to Ga-host isotopes. Theoretical results for the in-band modes of As_N in cubic gallium nitride are compared and discussed with the existing Raman data on molecular beam epitaxy (MBE) grown GaN layers on GaAs substrates, as well as on GaN samples intentionally doped with As.     

相空间重构和正则极限学习机的网络流量预测

网络流量预测一直是网络研究技术中的热点,针对网络流量变化的时变性、混沌性,提出一种相空间重构和正则极限学习机的网络流量预测模型。首先收集大量的网络流量历史样本,并进行相应的预处理,然后根据混沌理论确定最优延迟时间和嵌入维数,并重构网络流量学习样本,最后采用正则极限学习机建立网络流量预测模型,并进行仿真对比实验。结果表明,相对于其它网络流量预测模型,本文模型可以更加准确描述网络流量的非线性变化特点,提高网络流量预测精度,预测结果具有一定实用价值。     

基于两方法博弈的马尔可夫随机场红外图像分割算法

电路板红外图像芯片提取是电路板红外故障检测系统中的重要环节,已成为红外图像分割领域关注的一个重点。针对红外图像的特性及传统分割算法效率和精度不足的缺陷,提出一种基于两种优化策略博弈的马尔可夫随机场红外图像分割方法。首先通过OTSU算法对图像进行初始分割;然后利用马尔可夫随机场理论建立图像分割模型;最后,通过SA、ICM优化策略间的博弈对图像进行分割,将两种优化策略视为博弈的两个局中人,通过寻找博弈的纳什均衡点来实现分割;实验结果表明,算法能够无人工干预地准确提取电路板红外图像所有芯片发热区域,并且很好地抑制噪声,准确处理边缘信息,具有一定的实用性和鲁棒性。     

Electronic structures and phase transition characters of β-, P61-, P62-and δ-Si3N4 under extreme conditions: a density functional theory study

This paper describes the results of structural, electronic and elastic properties of silicon nitride(in its high-pressure P61 and P62 phases) through the first-principles calculation combined with an ultra-soft pseudopotential. The computed equilibrium lattice constants agree well with the experimental data and the theoretical results. The strongest chemical bond(N–Si bond) shows a covalent nature with a little weaker ionic character. P61-Si3N4 is more stable than P62-Si3N4 due mainly to the fact that the shorter N–Si bond in the P61 phase allows stronger electron hybridizations. We have also predicted the phase stability of Si3N4 using the quasi-harmonic approximation, in which the lattice vibration and phonon effect are both considered. The results show that the β→P61 phase transition is very likely to occur at 42.9 GPa and 300 K. The reason why the β→P61→δ phase transitions had never been observed is also discussed.     

基于决策论的数字调制信号识别方法

以决策论为基础提出了一种改进的数字调制信号识别方法,该方法仅需4个相对简单的特征参数,就能识别2ASK、4ASK、2FSK、4FSK、2PSK、4PSK和16QAM这7种数字调制信号。仿真结果表明,该方法复杂度较低,识别正确率有较大提高,尤其对于2ASK、4ASK、MPSK/MFSK及16QAM的识别,在信噪比较低的情况下,具有较好的识别效果。     

参考信号耦合有用信号对干扰对消系统的影响及其抑制

分析了参考信号耦合有用信号时,实际自适应干扰对消系统的时域特性。分析表明,参考信号含有用信号导致系统时变,改变系统的最佳权值,使系统的干扰对消效果下降,并对有用信号的接收产生影响。根据实际共平台通信系统的收发耦合特性,从时域角度分析得到系统干扰对消比和有用对消比的计算表达式,并得到干扰对消比和有用对消比随相对时延相位变化的规律。提出一种时延匹配方法,通过匹配参考信号提取点至正交功分器输出与接收天线至合成信号注入点间的时延,可以有效抑制参考信号耦合有用信号导致干扰对消效果下降的问题。仿真结果表明,所提出的时延匹配方法能消除有用信号对干扰对消比的影响,还能提高干扰对消效果。     

基于马尔可夫决策的理性秘密共享方案

基于马尔可夫决策理论研究理性密码共享系统模型和秘密重构方法。首先利用马尔可夫决策方法,提出适合于理性秘密共享的系统模型,该模型包括参与者集合、状态集合、风险偏好函数、状态转移函数、回报函数等。在模型中,引入秘密重构中的参与者的风险偏好函数刻画秘密共享模型的状态集合和状态转移函数。其次,基于所提出的系统模型构造相应的理性秘密共享方案,基于马尔可夫策略解决各理性参与者在秘密共享方案中的秘密重构问题。最后对方案进行理论分析证明,给出理性秘密重构方案中折扣因子、回报函数、参与者风险偏好函数间的函数关系,其结果表明所提系统模型方法的合理性和有效性。