Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.     

微晶合金在电流互感器中的应用

从微晶合金的性能特点出发，分析了其在电流互感器中的应用前景。     

On the Automatic Recovery of Style-Specific Architectural Relations in Software Systems

The cost of maintaining a software system over a long period of time far exceeds its initial development cost. Much of the maintenance cost is attributed to the time required by new developers to understand legacy systems. High-level structural information helps maintainers navigate through the numerous low-level components and relations present in the source code. Modularization tools can be used to produce subsystem decompositions from the source code but do not typically produce high-level architectural relations between the newly found subsystems. Controlling subsystem interactions is one important way in which the overall complexity of software maintenance can be reduced.We have developed a tool, called ARIS (Architecture Relation Inference System), that enables software engineers to define rules and relations for regulating subsystem interactions. These rules and relations are called Interconnection Styles and are definedusing a visual notation. The style definition is used by our tool to infer subsystem-level relations in designs being reverse engineered from source code.In this paper we describe our tool and its underlying techniques and algorithms. Using a case study, we describe how ARIS is used to reverse engineer high-level structural information from a real application.     

Object-oriented DBMS requirements

The requirements on an object-oriented DBMS for management of information in a large, complex enterprise are presented. These requirements aid in the achievement of an environment characterized by data sharing, open architectures, application and data portability, and assurance of data integrity. They were defined from the point of view of a user of the DBMS; therefore they describe the expected functionality of the DBMS and do not specify the method of implementation to achieve this functionality. They encompass requirements on the data model, query and data manipulation languages, the system architecure, interfaces to the system, change management, and transaction management.     

Colour Centres and Energy Transfer in BaF2-xClx:Eu2+ Phosphors

The optical absorption spectra of BaF2-xClx:Eu2 after ultraviolet (UV) light excitation were investigated.The differences between the absorption spectra after and before excitation (DAS) were observed.The DAS increase at both the high and the low energy side of F band in BaF2-xClx:Eu2 after 245 nm UV light excitation.The bleach effect of UV light and the absorption of electrons in the valence band may account for the former and the formation of Fa centres (association of F(Cl-) centres), whose absorption band matches the HeNe laser better, may explain the latter.In the write-in process, the transfer of electrons is via tunneling.In the readout process, the transfer of electrons captured in F(F-) and Fa centres is more likely via tunneling, and that of F(Cl-) centres is more likely via conduction band.     

Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

We report on the use of pulsed plasma-enhanced chemical vapor deposition (P-PECVD) technique and show that “state-of-the-art” amorphous silicon (a-Si:H) materials and solar cells can be produced at a deposition rate of up to 15 Å/s using a modulation frequency in the range 1–100 kHz. The approach has also been developed to deposit materials and devices onto large area, 30 cm×40 cm, substrates with thickness uniformity (<5%), and gas utilization rate (>25%). We have developed a new “hot wire” chemical vapor deposition (HWCVD) method and report that our new filament material, graphite, has so far shown no appreciable degradation even after deposition of 500 μm of amorphous silicon. We report that this technique can produce “state-of-the-art” a-Si:H and that a solar cell of p/i/n configuration exhibited an initial efficiency approaching 9%. The use of microcrystalline silicon (μc-Si) materials to produce low-cost stable solar cells is gaining considerable attention. We show that both of these techniques can produce thin film μc-Si, dependent on process conditions, with 1 1 1 and/or 2 2 0 orientations and with a grain size of approx. 500 A. Inclusion of these types of materials into a solar cell configuration will be discussed.     

Feasibility study of absolute activity measurement with metallic magnetic microcalorimeters

We report on a feasibility study on precise determination of mass-specific activity of low-energy emitting radioisotopes. Conventional methods of activity measurement suffer from source self-absorption and a strong decrease in detection efficiency for low-energy electrons and photons. We propose a new method based on metallic magnetic microcalorimeters with the source embedded in the detector target in a 4π geometry. First results with a ⁵⁵Fe source show that electrons and photons are detected with a detection efficiency close to unity and with little loss of energy for electrons. The aim of this study is to provide standards of activity with very low uncertainties in the framework of radiation metrology.     

Using ion implantation to adjust the transition temperature of superconducting films

We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer T_c control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.     

A VLSI architecture for a half-edge-based corner detector

Corner detection is a low-level feature detection operator that is of great use in image processing applications, for example, optical flow and structure from motion by image correspondence. The detection of corners is a computationally intensive operation. Past implementations of corner detection techniques have been restricted to software. In this paper we propose an efficient very large-scale integration (VLSI) architecture for detection of corners in images. The corner detection technique is based on the half-edge concept and the first directional derivative of Gaussian. Apart from the location of the corner points, the algorithm also computes the corner orientation and the corner angle and outputs the edge map of the image. The symmetrical properties of the masks are utilized to reduce the number of convolutions effectively, from eight to two. Therefore, the number of multiplications required per pixel is reduced from 1800 to 392. Thus, the proposed architecture yields a speed-up factor of 4.6 over conventional convolution architectures. The architecture uses the principles of pipelining and parallelism and can be implemented in VLSI.