理想匹配层的综合优化

本文讨论了理想匹配层的吸收性能 ,给出了一种有效截断理想匹配层的边界条件 ,分析了不同导率剖面和边界条件对理想匹配层吸收性能的影响 ,给出了最小反射意义下的优化理想匹配层。     

Effect of seed layer on the growth of rutile TiO2 nanorod arrays and their performance in dye-sensitized solar cells

In order to improve the performance of TiO₂ photoanode-based dye sensitized solar cells (DSSCs), rutile TiO₂ nanorod arrays (NRAs) were grown on SnO₂:F (FTO) conductive glass coated with TiO₂ seed layer by a hydrothermal method. The TiO₂ seed layer was obtained by spin-coating titanium tetraisopropoxide (TTIP) isopropanol solution with concentration in the range of 0~0.075 M. Then the effect of the thin TiO₂ seed layer on the crystal structure and surface morphology of TiO₂ NRAs and the photoelectric conversion properties of the corresponding DSSCs were investigated. It is found that TiO₂ NRAs are vertically oriented, about 1.7 μm long and the average diameter is about 35 nm for the samples derived from TTIP in the range of 0.005~0.05 M, which are more uniform and better separated from each other than those without TiO₂ seed layer (average diameter 35~85 nm). The photoelectric conversion efficiency of DSSCs based on TiO₂ NRAs with TiO₂ seed layer is larger than that without TiO₂ seed layer. Typically, the energy efficiency of DSSCs obtained from the seed solution of 0.025 M TTIP is 1.47%, about 1.8 times greater than that without TiO₂ seed layer. The performance improvement is attributed to the thinner, denser and better oriented NRAs grown on seeded-FTO substrate absorbing more dye and suppressing charge recombination at the FTO substrate/electrolyte interface.     

Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n<Superscript>+</Superscript>-GaAs heterojunction diodes for an X-ray imaging detector

The growth characteristics of thick (100) CdTe epitaxial layers of a thickness up to 200 μm on a (100) GaAs substrate in a metal-organic vapor-phase epitaxy (MOVPE) system and fabrication of CdTe/n⁺-GaAs heterojunction diodes for their possible applications in low-energy x-ray imaging detectors are reported. The grown epilayers were of high structural quality as revealed from the x-ray double-crystal rocking curve (DCRC) analysis, where the full-width at half-maximum (FWHM) values of the (400) diffraction peaks was between 50 arcsec and 70 arcsec. The 4.2-K photoluminescence (PL) showed high-intensity bound-excitonic emission and very small defect-related peaks. The heterojunction diode fabricated had a good rectification property with a low value of reverse-bias current. The x-ray detection capability of the diode was examined by the time-of-flight (TOF) measurement, where good bias-dependent photoresponse was observed, but no carrier transport property could be deduced. It was found that the CdTe layer has a large number of trapping states as attributed to the cadmium-related vacancy and Ga-impurity, diffused from the substrate, related defect complexes.     

工艺参数对磁力搅拌-化学沉积Ni-P-SiC镀层的影响

用磁力搅拌-化学沉积的方法,在45钢表面沉积Ni-P-SiC镀层。研究了SiC微粒添加量、搅拌速率以及镀液温度等对镀层硬度和表面形貌的影响,借助扫描电子显微镜(SEM)对镀层进行观察。结果表明:当SiC的质量浓度为10 g/L时,镀层显微硬度最大(615.2HV);当磁力搅拌速率为300 r/min时,镀层的显微硬度最大(632.8HV)。磁力搅拌-化学沉积Ni-P-SiC镀层的最佳工艺参数为:SiC添加的质量浓度10 g/L,搅拌速率300 r/min,温度85℃。     

Localized Ligand Induced Electroless Plating (LIEP) Process for the Fabrication of Copper Patterns Onto Flexible Polymer Substrates

The “ligand induced electroless plating (LIEP) process” is a simple process to obtain localized metal plating onto flexible polymers such as poly(ethylene terephtalate) and polyvinylidene fluoride sheets. This generic and cost‐effective process, efficient on any common polymer surface, is based on the covalent grafting by the GraftFast process of a thin chelating polymer film, such as poly(acrylic acid), which can complex copper ions. The entrapped copper ions are then chemically reduced in situ and the resulting Cu⁰ species act as a seed layer for the electroless copper growth which, thus, starts inside the host polymer. The present work focuses on the application of the LIEP process to the patterning of localized metallic tracks via two simple lithographic methods. The first is based on a standard photolithography process using a positive photoresist masking to prevent the covalent grafting of PAA in designated areas of the polymer substrate. In the second, the patterning is performed by direct printing of the mask with a commercial laser printer. In both cases, the mask was lifted off before the copper electroless plating step, which provides ecological benefits, since only the amount of copper necessary for the metallic patterning is used.     

Enhanced performance in inverted polymer solar cells employing microwave-annealed sol-gel ZnO as electron transport layers

In this work, we propose a facile microwave-assisted approach for annealing sol-gel derived ZnO films to serve as electron transport layers (ETLs) for inverted bulk heterojunction polymer solar cells. We have demonstrated an impressive enhancement in performance for devices based on a poly (3-hexylthiophene) (P3HT): (6,6)-phenyl-C₆₁-butyric acid methyl ester (PC₆₁BM) system employing the microwave-annealed ZnO (ZnO (MW)) ETLs in comparison to the cases using the conventional hotplate-annealed ZnO (ZnO (HP)) ones. The better electron transport in the device with the ZnO (MW) ETL is mainly ascribed to the preferable interfacial contact as evidenced by the morphology characteristics. Furthermore, the comprehensive analyses conducted from the light intensity dependent photocurrent and photovoltage measurements, the capacitance-voltage characteristics, and the alternating current impedance spectra suggest that the utilization of the ZnO (MW) ETLs can effectively suppress trap-assisted recombination as well as charge accumulation at the interface between P3HT: PC₆₁BM layers and ZnO layers, which is responsible for the enhanced device performance.     

Barrier layers for Cu ULSI metallization

Barrier layers are integral parts of many metal interconnect systems. In this paper we review the current status of barrier layers for copper metallization for ultra-large-scale-integration (ULSI) technology for integrated circuits (ICs) manufacturing. The role of barrier layers is reviewed and the criteria that determine the process window, i.e. the optimum barrier thickness and the deposition processes, for their manufacturing are discussed. Various deposition methods are presented: physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), electroless deposition (ELD), and atomic layer CVD (ALCVD) for barrier layers implementation. The barrier integration methods and the interaction between the barrier and the copper metallization are presented and discussed. Finally, the common inspection and metrology for barrier layer are critically reviewed.     

发射药喷涂涂覆中涂覆液溶剂比的选择

为了优化端面局部阻燃发射药(端面涂覆,且小孔保持通气状态)涂覆层制备的喷涂工艺中涂覆液溶剂比,采用醋酸丁酸纤维素(CAB)作钝感剂,CAB与吸收药片TG-1(皮罗棉和硝化甘油为主要组分)作溶质,乙醇-丙酮(V/V=1/1)为溶剂,按照不同溶剂比制备得到涂覆液,用此涂覆液采用喷涂的工艺制成了涂覆层薄膜和涂覆发射药,利用万能材料测试仪获得涂覆层薄膜的力学强度,并利用三维视频对涂覆层在拉伸前、后的表面结构进行了局部放大观察分析,对不同溶剂比的涂覆发射药进行了密闭爆发器试验。结果表明,涂覆层的力学强度、表面及断裂处形貌与溶剂比有明显联系,溶剂比主要影响了涂覆层材质的均匀性和致密性,是影响涂覆层力学强度的重要因素,从而对涂覆发射药的燃烧渐增性产生影响。当溶剂比为8∶1时,露孔率达到95%以上,同时获得的涂覆层表面最为光滑,其薄膜的拉伸强度最大,为49.75 MPa,断裂处最为整齐,涂覆发射药的燃气动态活度变化值达到0.0920 MPa~(-1)·s~(-1),为所有样品中的最大值。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Metallic Zinc Anode Working at 50 and 50 mAh cm−2 with High Depth of Discharge via Electrical Double Layer Reconstruction

Achieving high-rate and high-areal-capacity Zn anode with high depth of discharge (DOD) offers a bright future for large-scale aqueous batteries. However, Zn deposition suffers from severe dendrite growth and side reactions, which compromises achievable lifetime. Herein, an electrical double layer (EDL) reconstruction strategy is proposed by employing acetone as electrolyte additive to fully address these issues. Experimental and theoretical simulation results reveal that the adsorption priority of acetone to water on Zn creates a water-poor inner Helmholtz layer. Meanwhile, the intense hydrogen bonding effect between acetone and water confines the activity of free water and weakens the Zn²⁺ solvation in the outer Helmholtz layer and diffusion layer. Such ion/molecule rearrangement in EDL suppresses hydrogen evolution, facilitates the desolvation process, and promotes the Zn²⁺ diffusion kinetics, which guides homogeneous Zn nucleation and uniform growth, even in extreme situations. At both ultrahigh current density of 50 mA cm⁻² and areal capacity of 50 mAh cm⁻², the addition of 20 v/v% acetone in 2 m ZnSO₄ extends the lifespan of Zn//Zn symmetric cells from 12 to 800 h, with a high DOD of 73.5%. The effectiveness of this strategy is further demonstrated in the Zn-MnO₂ full batteries at wide temperature range from −30 to 40 °C.