大容量MLCC的工艺设计

采用四层端电极(Ni/Cu/Ni/Sn)结构设计,底层为Ni,电镀Cu/Ni/Sn的工艺方法,制作了大容量MLCC。研究了四层结构和三层结构(Cu/Ni/Sn)对电容量等基本电性能、可靠性和内应力的影响。结果表明:制作1206规格10μFMLCC,C为9.86～10.46μF、tanδ为(360～390)×10–4、绝缘电阻≥1.5×108Ω、耐电压值为175～205V,四层结构与三层结构电性能相当。可靠性测试中,四层结构抗机械和热冲击能力提高了20%,且有利于瓷体内应力释放。     

过热保护用片式PTC热敏电阻的研制

采用流延叠层的方法成型,借烧结曲线控制R25及α,用四层端电极的结构和浸渍电镀保护剂的方法制作端电极,制备了0603型过热保护用片式PTC热敏电阻。其测温点为(85±5)℃,(105±5)℃;R25为470×(1±0.3)%Ω;α大于10%℃–1和升阻比(Rmax/Rmin)大于104。     

双发光层白色FOLED的制备及其性能研究

采用以含ITO导电层的柔性透明PET基片作为衬底,荧光材料TBPe、Rubrene分别掺杂在主体材料CBP和Balq中作为蓝色发光层和橙红色发光层,制备了双发光层白色柔性有机电致发光器件(FOLED)。通过适当调节发光层的掺杂比例和厚度,得到了发光性能理想的白光器件。测量表明,制备的器件色稳定性很好,色度随外加驱动电压在很大范围内变化很小,且其色坐标均非常接近于白色等能点。当电流密度为50mA/cm2时,器件最高外量子效率达到0.9%。通过抗弯折性能的测试证明,可以基本实现柔性显示的目的。     

瀑布沟水电站地下厂房三大洞室开挖分层及施工程序

详细介绍了瀑布沟水电站大规模地下厂房洞室群的开挖分层、分区及总体施工程序以及各洞室相互之间的开挖关系。重点介绍了为提前半年时间发电采取的调整开挖施工程序的措施,并相应制定了施工安全保障措施,最终使安全、质量、工期均处于受控状态,实现预期提前半年工期及安全的目标,为水电站大规模地下洞室群的开挖积累了经验,对类似工程施工具有借鉴意义。     

Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity

Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene ...     

文东深层低渗透多油层砂岩油田细分层系开发

深层低渗透多油层砂岩油田受经济产量的限制，一般采用1套层系笼统合采。开发实践表明，层系内如层数大多，层间非均质性是造成水驱动用状况极不均衡的内在因素。多层合采合注开发效果较差，需要研究新的层系组合与划分方式，即能满足开发生产对层系细分的需要，又能使注采井距达到注水开发的要求。东濮凹陷文东油田属于低渗透多油层砂岩油田，油层多达55个，在准确认识油藏地质特征及开发特点的基础上，以经济效益为前提，合理划分与组合开发层系，其高效、经济细分层系开发的经验，对科学、合理开发同类油田具有借鉴意义。     

渤海L油田厚油层内部水淹分布规律初探

针对L油田单层厚度大且无明显隔层的特点,在综合分析动静态资料的基础上,从储层非均质性、重力作用、隔夹层分布、注采对应率、注采强度等多个影响因素入手,对厚油层的水淹及剩余油分布规律进行了研究,认为该油田剩余油分布主要受储层非均质性及注入水重力作用两大因素影响,注采强度、注采对应率的影响次之,隔夹层分布影响很小;今后对厚油层的开发方式应在细分层系、射孔优化、气水交替驱等方面进一步调整,以水平井开发研究作为重点。     

Printed Transistors on Paper: Towards Smart Consumer Product Packaging

The integration of fully printed transistors on low cost paper substrates compatible with roll‐to‐roll processes is demonstrated here. Printed electronics promises to enable a range of technologies on paper including printed sensors, RF tags, and displays. However, progress has been slow due to the paper roughness and ink absorption. This is solved here by employing gravure printing to print local smoothing pads that also act as an absorption barrier. This innovative local smoothing process retains desirable paper properties such as foldability, breathability, and biodegradability outside of electronically active areas. Atomic force microscopy measurements show significant improvements in roughness. The polymer ink and printing parameters are optimized to minimize ink absorption and printing artifacts when printing the smoothing layer. Organic thin film transistors (OTFT) are fabricated on top of this locally smoothed paper. OTFTs exhibit performance on par with previously reported printed transistors on plastic utilizing the same materials system (pBTTT semiconductor, poly‐4‐vinylphenol dielectric). OTFTs deliver saturation mobility approaching 0.1 cm²V^–1s^–1 and on‐off‐ratio of 3.2 × 10⁴. This attests to the quality of the local smoothing, and points to a promising path for realizing electronics on paper.     

Self‐Assembled Quasi‐3D Nanocomposite: A Novel p‐Type Hole Transport Layer for High Performance Inverted Organic Solar Cells

Hole transport layer (HTL) plays a critical role for achieving high performance solution‐processed optoelectronics including organic electronics. For organic solar cells (OSCs), the inverted structure has been widely adopted to achieve prolonged stability. However, there are limited studies of p‐type effective HTL on top of the organic active layer (hereafter named as top HTL) for inverted OSCs. Currently, p‐type top HTLs are mainly 2D materials, which have an intrinsic vertical conduction limitation and are too thin to function as practical HTL for large area optoelectronic applications. In the present study, a novel self‐assembled quasi‐3D nanocomposite is demonstrated as a p‐type top HTL. Remarkably, the novel HTL achieves ≈15 times enhanced conductivity and ≈16 times extended thickness compared to the 2D counterpart. By applying this novel HTL in inverted OSCs covering fullerene and non‐fullerene systems, device performance is significantly improved. The champion power conversion efficiency reaches 12.13%, which is the highest reported performance of solution processed HTL based inverted OSCs. Furthermore, the stability of OSCs is dramatically enhanced compared with conventional devices. The work contributes to not only evolving the highly stable and large scale OSCs for practical applications but also diversifying the strategies to improve device performance.     

两端镜像对称缺陷三元光子晶体的特性研究

运用光学传输矩阵理论,研究了两端镜像对称缺陷层一维三元光子晶体的光传输特性,并比较了一维三元光子晶体与一维二元光子晶体的禁带特性.数值模拟结果得出:一维三元光子晶体的禁带明显宽于二元光子晶体;且在三元光子晶体两端加相同缺陷层后,禁带展宽的同时出现了多个窄的透射峰.考察了影响透射峰的主要因素,缺陷层的折射率越大,透射峰越尖锐;缺陷层的光学厚度在500 nm到800 nm范围内,缺陷层的光学厚度越大,透射峰越尖锐,且向长波方向移动;光子晶体的周期数越大,透射峰越尖锐,且透射峰的个数增加.这种结构可用来实现多通道窄带滤波器,通过调节各个参数可得到所需要的波长以及通道数目的窄带滤波器.