无底柱分段崩落法不贫化放矿理论基础（续完）

论述矿石损失贫化的经济分析和计算方法，应用有效金属量、盈利额、工业矿石全经济价值以及矿石损失贫化的经济损失等指标，分析判定各种放矿方案的优劣。     

双轴晶体主平面上倍频的相位匹配

从折射率椭球方程和折射率椭球面出发，讨论光束在双轴晶体中传播及偏振的特性、主平面倍频共线相位匹配（PM）问题，得到了双轴晶体主平面内激光所有可能PM倍频的8种偏振组合及其相应的PM角公式、有效非线性（NL）系数deff的一般表达式。结果表明：得到的公式简单，可大大简化PM参数计算及优化设计；折射率椭球面是单层曲面，比双层的折射率面简单；基于折射率椭球面寻找所有可能PM的类型、偏振组合的方法物理图像简明，易于理解，大大降低了双轴晶体PM问题分析的难度。     

基于分数阶傅里叶变换的低信噪比线性调频信号参数快速估计算法

针对低信噪比线性调频信号参数估计精度低且运算量大的问题,该文提出一种基于高效分数阶傅里叶变换(FRFT)和分数阶频谱4阶原点矩的快速估计算法。该算法通过判断调频斜率的正负,以确定旋转阶次所在初始区间;进而应用高效FRFT获得初始旋转阶次;最终利用分数阶频谱4阶原点矩,进一步确定搜索区间和步长,实现精准搜索,从而满足参数精度的要求。实验结果表明,该算法尤其适合用于低信噪比情况下的线性调频(LFM)信号检测与参数的准确估计,而且运算量较低。     

Investigation on the Gain of Multi—wavelength Pumping Broadband Raman Amplifier

The Stokes spectrum in the stimulated Raman scattering(SRS)is very complicated.In this article,we use both Gaussian and Lorentz approximation to investigate the gain properties of multi-pumping broadband Raman amplifier,and present some schemes for flattening the gain.All the results show that the flatness of the gain spectrum is closely related to the pumping frequency grid.By researching the gain properties of Raman amplifiers of such ITU-T fibers as G.652,G.653,G.655 and large effective area non-zero dispersion flattening fiber,we find that the Raman gain is associated with the fiber type and its transmission characteristics,especially it decreases with the increase of the effective core area.     

过境卫星对广电专用卫星的干扰及应对措施

作为广播电视信号三大传输手段之一的卫星传输技术,在当前仍然扮演着重要角色。卫星传输系统是一个开放系统,易受到外界信号的干扰。过境卫星干扰由于其具有隐蔽性、特殊性,给广播电视卫星传输带来许多不利影响。本文结合工作实际,通过介绍近年来发生的干扰实例,对过境卫星干扰的机理进行分析,提出减小干扰的有效措施,为同行提供一定的借鉴作用。     

Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2O3

The effect of a thin Si layer insertion at W/La₂O₃ interface on the electrical characteristics of MOS capacitors and transistors is investigated. A suppression in the EOT increase can be obtained with Si insertion, indicating the inhibition of diffusion of oxygen atoms into La₂O₃ layer by forming an amorphous La-silicate layer at the W/La₂O₃ interface. In addition, positive shifts in V_fb and V_th caused by Si insertion implies the formation of amorphous La-silicate layer at the top of La₂O₃ dielectrics reduces the positive fixed charges induced by the metal electrode. Consequently, a large improvement in mobility has been confirmed for both at peak value and at high E_eff of 1 MV/cm with Si inserted nFETs. Although a degradation trend on EOT scaling has been observed, the insertion of thin Si layer is effective in pushing the scaling limit.     

在具有相关性的离散随机介质中波场的二阶矩

利用建立在多次散射基础上的Ｄｙｓｏｎ方程和Ｂｅｔｈｅ－Ｓａｌｐｅｔｅｒ方程，讨论了在考虑随机分布的散射间的对相关而忽略高阶相关的情况下标量波声波场的传播问题。认为在波传播方向散射体的相关性具有马尔科夫近似，同时运用前向散射近似，得到了在相关性离散随机介质中的等效传播常数，吸收截面和互相干函数的解析解。     

Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii–vi compounds

Theoretical design of pseudo-ternary and quaternary alloys by superlattice structures consisting of (Zn,Cd)(S,Se) binary II–VI compounds has been studied. For pseudo-ternary ZnCdS and ZnCdSe alloys, the superlattices with two layers in a cycle, i.e., ZnS/CdS and ZnSe/CdSe are considered, and for pseudo-quaternary ZnCdSSe alloy, the two superlattice structures with more than two layers in a cycle are considered. In order to design and evaluate these superlattices, the expression for the equilibrium in-plane lattice constant of these superlattices has been derived by minimizing the total elastic strain energy in the cycle. The combinations of layer thicknesses in a cycle and the effective bandgap of these superlattices have been calculated while the elastic strain effect was included. The usefulness of these superlattice structures has been evaluated.     

薄膜偏振分光镜的优化设计与实验

采用矩阵法推导了规整膜系的等效导纳并计算出中心波长的反射率,重点分析了P偏振光的有效导纳与折射率之间的关系,说明了膜系对高、低折射率的灵敏度是不同的;给出了设计薄膜偏振分光镜需满足的公式组,突破了Mac Neille公式的限制;介绍了调节有效导纳值的膜层置换法,可有效抑制P光的反射峰。模拟与实验结果表明,在170 nm范围内,消光比大于1 000:1。     

双辅助光作用下半导体光放大器性能分析

半导体光放大器以其良好的非线性在全光网络中具有广泛应用,但较长的载流子恢复时间一直是制约其用于超快全光信号处理的速率瓶颈,基于包含自发辐射噪声的半导体光放大器模型,探讨了提高半导体光放大器增益恢复时间的有效途径,通过对制约透明波长移动,增益饱和与有效载流子寿命的相关因素进行数值分析,得出以下结论:与单辅助光相比,采用双辅助光可以在不牺牲信号增益的前提下进一步缩短载流子寿命,因而是提高半导体光放大器增益恢复时间的有效途径,这一点对工程设计和应用具有一定的指导意义.