二滩水电站发电机横差保护配置和定值整定分析

根据二滩水电站发电机定子绕组的分布特点,对发电机的内部故障进行了分析,并结合CT的配置情况,提出了发电机横差保护的配置方案.通过对改造后的横差保护原理分析,对发电机横差保护的定值进行了整定,并用不同工况下的实测数据进行校正,最后得出横差保护配置和定值整定的一些注意事项.     

移动模架造桥机静压试验变形观测计算与预拱度设置

为了保障桥梁安全,移动模架必须进行竖向荷载静压试验,试验期间的变形观测是计算弹性变形和非弹性变形及进行预拱度设置的基础．讨论了移动模架试压试验的变形监测点的选择、变形观测方法和挠度计算方法、弹性变形量和非弹性变形量的求解计算和预拱度设置等问题．实践表明,变形观测方法要以不低于二等精密水准测量的精度为宜;弹性变形应根据混凝土实际密度计算,并用实验数据进行修正;造桥机主梁荷载作用后的弹性变形影响在预拱度设置值计算时应一并考虑．     

On the complexity of a two-point boundary value problem in different settings

We study the complexity of a two-point boundary value problem. We concentrate on the linear problem of order k with separated boundary conditions. Right-hand side functions are assumed to be r times differentiable with all derivatives bounded by a constant. We consider three models of computation: deterministic with standard and linear information, randomized and quantum. In each setting, we construct an algorithm for solving the problem, which allows us to establish upper complexity bounds. In the deterministic setting, we show that the use of linear information gives us a speed-up of at least one order of magnitude compared with the standard information. For randomized algorithms, we show that the speed-up over standard deterministic algorithms is by 1/2 in the exponent. For quantum algorithms, we can achieve a speed-up by one order of magnitude. We also provide lower complexity bounds. They match upper bounds in the deterministic setting with the standard information, and almost match upper bounds in the randomized and quantum settings. In the deterministic setting with the linear information, a gap still remains between the upper and lower complexity bounds.     

慢化体材料对加速器BNCT束流装置中子品质影响研究

基于加速器中子源的硼中子俘获治疗（BNCT）是一种较好的肿瘤治疗技术,通过慢化得到的超热中子可用于非浅表肿瘤BNCT治疗.本文以2.3 MeV、10 mA质子流强的7Li（p,n）7Be中子源为对象,建立了加速器BNCT束流装置模型,采用中子输运程序MCNP研究了慢化体材料对超热中子束流品质的影响.结果表明：采用重水作为慢化体材料可有效的提高束流出口处超热中子水平,对于2.3 MeV、10 mA质子流强的7Li（p,n）7Be中子源,超热中子束流水平为0.669×109n/（cm2.s）,超热中子与快中子产额比达62.3,基本达到临床治疗所需109n/（cm2.s）的超热中子水平.     

NUMERICAL STUDY OF NON-AQUEOUS PHASE LIQUID TRANSPORT IN A SINGLE FILLED FRACTURE BY LATTICE BOLTZMANN METHOD

In this article,the Non-Aqueous Phase Liquid(NAPL)transport in the single filled fracture was studied with the Shan-Chen multi-component multiphase Lattice Boltzmann Method(LBM)with special consideration of wettability effects.With the help of the model,the contact angle of the non-wetting phase and wetting phase interface at a solid wall could be adjusted.By considering a set of appropriate boundary conditions,the fractured conductivity was investigated in condition that the NAPL blocks the channels in the single filled fracture.In order to study the wettability effects on the NAPL transport,a constant driving force was introduced in the Shan-Chen multi-component multiphase LBM.Flow regimes with different wettabilities were discussed.Simulated results show that the LBM is a very instrumental method for simulating and studying the immiscible multiphase flow problems in single filled fracture.     

意见领袖——网络时代下高校辅导员角色的新拓展

网络意见领袖具有广泛的关注度和影响力,其对网络热点事件的见解常能影响网民的看法,进而引领网络舆情走向。辅导员是大学生思想政治教育的骨干力量,网络时代下拓展辅导员的意见领袖角色,有利于扩大思想政治教育的时空场域、把握网络舆情、增强思想政治教育的有效性。辅导员的网络意见领袖角色塑造应从提高知识能力、转变叙事语言、关爱学生注重身教几方面着手。     

关于高职院校设置核电站设备运行与维护专业的可行性研究

针对我国核电发展的现状以及核电行业对专门人才的需求,结合目前高职院校的专业设置及教学资源情况,分析论证高职院校设置核电站设备运行与维护专业的必要性和可行性。     

液体流量标准装置中调节阀后流速分布研究

为了解决调节阀对管道中流体的扰动问题,采用皮托管取压的方式对调节阀扰动后的流速分布进行了研究。通过改变皮托管沿管道径向深入管道的距离,对距离调节阀各管径处的水流流速进行了测量,得到了各距离的流速分布图。结果表明,10倍管径长度的直管段还不能够完全将调节阀扰动后的水流流速分布转变成以管道中心线为中心的对称流速分布。该试验结果为计量检定标准装置的设计、流量计的检定和校准等奠定了基础。     

Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

This paper describes the Si-doping of GaAs that was grown using the AsCl₃:H₂:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl₃:SiCl₄ liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O¹⁶ to 2×10¹⁹ cm^?3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl₃:SiCl₄ doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n⁺ structures with order of magnitude changes occurring within 500 Å. For the 1×10₁₆ to 8×l0¹⁸ cm^?3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.     

氟橡胶硫化促进剂BPP的应用试验

对氟橡胶硫化促进剂ＢＰＰ（苄基三苯基氯化磷）进行了对比应用试验。结果表明，该促进剂在氟橡胶中分散性、加工性良好，可以明显降低压缩永久变形。并完全可以代替现用老产品，而价格仅为老产品的２／３。