应用于PWM转换器的高性能误差放大器

基于整个环路稳定性的分析,提出一种高性能误差放大器,该电路与芯片外围的反激式应用电路一起完成负反馈调节.基于700V BCD工艺,对该电路的应用芯片进行仿真和流片.测试结果表明,该电路产生的动态阻抗为18Ω,PWM增益为-25.3%/mA,满足工程应用要求,实现系统稳定输出.     

基于中低压器件实现的高压负电平位移电路

提出了一种新型高压负电平位移电路.该电路只采用中低压PM()S来实现高压电平位移,与传统的高压负电平位移电路相比,降低了工艺及器件难度.分析了该新型电平位移电路的电路结构与工作原理.采用1μm CMOS工艺,通过HSPICE进行电路仿真验证,证明提出的高压负电平位移电路正确可行.     

一种基于Gm-C的高Q值模拟中频带通滤波器设计与实现

设计并实现了一种基于Gm-C二次节(Biquad)结构的6阶切比雪夫Ⅰ型模拟中频带通滤波器,中心频率为46MHz,带宽为2.046MHz.其中Biquad结构中加入了负阻抗单元,增加输出阻抗,实现滤波器的高Q值(品质因数).跨导放大器(Operational transconductance amplifier,OTA)单元使用源极负反馈技术,优化了OTA的线性性能.整个滤波器电路采用0.35μm CMOS工艺实现.经过仿真验证,滤波器的通带纹波是2.704dB,1.5倍带宽处衰减大于21dB.在3.3V电源电压情况下,滤波器的总电流消耗为8.87mA.     

一种新型硅三端负阻器件

提出并研制成一种新型硅三端负阻器件。该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有“双负阻”特性和正阻区阻值易于控制等特点。由理论计算出的器件I_c—V_(CB)特性和负阻参数与实验结果符合良好。     

Nano-Al2O3/PANI composites with high negative permittivity

Polyaniline (PANI) composites filled with ferroferric oxide and barium titanate were discovered to have metamaterial characteristics in recent years. In this paper, based on micron-Al₂O₃/PANI composites with negative permittivity, the dielectric properties of nano-Al₂O₃/PANI composites were studied. Nano-Al₂O₃/PANI composites had negative permittivity, which was considerably higher than that of PANI and micron-Al₂O₃/PANI composites. The higher negative permittivity was caused by the better dispersibility of nano-Al₂O₃, resulting in the enlargement of polarization voltage on a greater range of PANI molecular chain. Moreover, nano-Al₂O₃/PANI composite with 5 wt% nano-Al₂O₃ has the largest negative permittivity (−2.24 × 10⁶) that has not been reported so far in oxide/PANI composites.     

一种新型的高耐热、高阻燃、低介电损耗的热固性树脂的开发

文章介绍了马来酰亚胺与三嗪环改性的酚醛树脂通过MICHAEL加成反应形成的新型热固性树脂。这种新型热固性树脂与环氧树脂一起形成了二元共混体系,这个二元共混体系应用于覆铜板,使得覆铜板具有高耐热、高阻燃、低介电损耗的特点,而且机械性能和吸湿后耐焊性有很好的平衡。     

一种宽温范围高稳定CMOS带隙基准源

在传统带隙基准源的基础上,设计了一种在极宽温度范围内具有高温度稳定性的CMOS带隙基准电路。该电路将三极管的集电极置于负反馈环路中,以避免三极管基极分流对集电极电位的影响,实现温度补偿。通过采用低电源抑制比(PSRR)的差分运放,可以得到不受电源电压影响的基准电压。基于0.5 μm CMOS标准工艺实现,采用Spectre进行仿真,结果表明:该带隙基准源在室温下产生的基准电压为(1.256 9±0.000 32) V,在－35 ℃~125 ℃温度范围内的温漂系数为1.39×10－6/℃;当工作电压为1.8~4.6 V时,输出电压仅变化0.31 mV/V;3 V供电下的功耗为14.69 μW;满足胎压监测芯片的设计要求。     

多峰I—V特性的共振隧穿量子器件

讨论了电子对双势垒共振隧穿的现象和特性,较为详细地论述了近年来发展起来的具有多峰I—V特性的共振隧穿量子器件的原理、结构和电路应用,最后展望了这类器件的发展前景。     

Evidence for the improvement of thermostability of the maltogenic α‐amylase of Aspergillus niger by negative pressure

Thermostability of the enzymes is influenced by the different parameters and pressure also influences the biological activity of the enzymes. Recently reported maltogenic α‐amylase from Aspergillus niger acts optimally on starch at 40°C and it was unstable above 40°C at atmospheric pressure. Calcium could stabilize the maltogenic α‐amylase activity up to 50°C at atmospheric pressure. But, at negative pressure (−200 mbar) enzyme was stable at temperatures higher than 50°C either in the presence or absence of the substrate, starch making it adoptable for starch processing. Enzyme showed higher affinity to the starch at negative pressure compared to the atmospheric pressure and change in the surface roughness of the enzyme is almost similar to the native state at 70°C and negative pressure. These results suggest that thermolabile enzymes can be used at negative pressures for industrial applications.     

Nd1-xSrxMnO3 (x = 0.3): A perovskite manganite ceramic that exhibits PTC and NTC double properties

Nd_1-xSr_xMnO₃ (NSMO, x = 0.280, 0.300, 0.330, 0.350, and 0.375) polycrystalline ceramics were fabricated using the sol-gel method. The crystal structure, surface morphology, valence state, elements distribution, and electrical properties were examined to understand the effect of Sr doping on NdMnO₃ ceramics. The resistivity of the NSMO ceramics was measured using a standard four-probe method. The results obtained revealed that Sr doping significantly decreased the resistivity of the ceramics, which can be explained by the double exchange (DE) interaction and small-polaron hopping (SPH) model. The Nd_0.70Sr_0.30MnO₃ ceramic had a positive temperature coefficient (PTC) of resistivity (16.69% K^?1) at 197.5 K, and is expected to be used for preparing electronic switches with high sensitivity. Additionally, the NSMO ceramics maintained a stable negative temperature coefficient (NTC) of resistivity (?1% K^?1) for x = 0.300 in the temperature range of 210.6–342.5 K. In conclusion, it is worth exploring materials with a high PTC and NTC over an extended temperature range, possessing the double potential function for high sensitivity or wide-temperature detection for electronic switches or infrared bolometers.