WC-Co硬质合金基体上高附着力金刚石薄膜的制备

采用微波等离子体化学气相沉积(CVD)法在WC-Co硬质合金基体上制备金刚石膜, 研究了TiN_x中间层的引入对金刚石薄膜质量及其附着性能的影响. 结果表明, 在酸浸蚀脱钴处理的基础上, 通过预沉积氮含量呈梯度变化的TiN_x中间过渡层, 可在硬质合金基体上制备出高质量的金刚石薄膜; 压痕法测试其临界载荷达1000N.     

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

To explore new constituents in two‐dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface‐based devices. Herein, PbI₂ crystals as thin as a few layers are synthesized, particularly through a facile low‐temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI₂‐based interfacial semiconductors, PbI₂ crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS₂ is enhanced in MoS₂/PbI₂ stacks, while a dramatic photoluminescence quenching of WS₂ and WSe₂ is revealed in WS₂/PbI₂ and WSe₂/PbI₂ stacks. This is attributed to the effective heterojunction formation between PbI₂ and these monolayers; type I band alignment in MoS₂/PbI₂ stacks, where fast‐transferred charge carriers accumulate in MoS₂ with high emission efficiency, results in photoluminescence enhancement, and type II in WS₂/PbI₂ and WSe₂/PbI₂ stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS₂, WS₂, and WSe₂ monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI₂, providing unprecedented capabilities to engineer the device performance of 2D heterostructures.     

Short-Period GaMnAs/GaAs Superlattices: Optical and Magnetic Characterization

Superlattices with magnetic layers containing from 8 to 16 GaMnAs monolayers corresponding to the mixed crystal composition between 5 and 6% of Mn and from 4 to 10 GaAs monolayers were grown by the low temperature MBE technique and characterized by Raman scattering. Folded acoustic phonons were observed for all superlattices in the Raman scattering spectra. The interlayer exchange coupling, found previously by the wide-angle neutron diffraction in selected superlattices was investigated by the spin-polarized neutron reflectometry. It was always of ferromagnetic type, no trace of antiferromagnetic coupling was found.     

碾压混凝土VC值的讨论与分析

大量工程实践证明,VC值对碾压混凝土的性能有着重要影响。随着碾压混凝土筑坝技术的发展,VC值的取值逐渐由大变小,碾压混凝土拌和物也从干硬性混凝土逐渐过渡到半塑性混凝土,改变了传统的“金包银”施工方式和防渗结构。通过对碾压混凝土VC值的讨论与分析研究,可为碾压混凝土筑坝技术的发展提供理论依据。     

表面钝化对HfTiON栅介质Ge MOS电容性能的影响

通过NO、N2O对Ge衬底进行表面钝化,生长GeOxNy界面层,然后采用反应磁控共溅射方法制备HfTiN薄膜,并利用湿N2气氛退火,将HfTiN转化为HfTiON高κ栅介质.研究了表面钝化对MOS器件性能的影响,结果表明,湿NO表面钝化能改善界面质量,有效降低MOS电容的栅极漏电流,增强器件的可靠性.     

混凝土柱钢梁连接节点设计

介绍了钢结构夹层钢梁与混凝土柱连接节点做法,提出了刚性节点和铰接节点的设计方法及节点做法。     

中间层Ni对TC4/2A14异种金属搅拌摩擦焊接头组织和性能的影响

目的 添加0.05 mm厚的Ni箔作为中间层,对3 mm厚的TC4钛合金和2A14铝合金进行搅拌摩擦焊,分析Ni对接头力学性能的影响。方法 采用扫描电镜、EDS能谱及XRD衍射等微观表征分析方法,对焊接接头的断口形貌、成分进行分析,探究Ni箔对焊接接头力学性能的影响。结果 由于钛合金和铝合金存在较大的物理化学性能差异,Ti/Al异种金属焊接性较差,界面容易产生TiAl3、TiAl、Ti3Al等金属间化合物,其中脆性相TiAl3对接头性能的影响最大,会导致综合力学性能下降。当加入中间层材料Ni后,由于Ni与Al晶体结构均属于面心立方,因此Ni与Al的扩散系数大于Ti与Al的扩散系数,Ni和Al之间优先形成金属间化合物且弥散分布于焊缝中,从而缩短了Ti与Al之间的相互扩散时间,减少了TiAl3相的生成。结论 在未添加中间层材料时,接头平均抗拉强度为237.3 MPa,约为2A14铝合金母材抗拉强度的56.7%;当添加中间层Ni后,对焊缝中金属间化合物的种类和数量进行了调控,减少了对性能影响最大的TiAl3相的生成,接头平均抗拉强度达到285.3 MPa,为2A14铝合金母材抗拉强度的68%。     

Si(111)衬底上GaN外延材料的应力分析

对Si(111)衬底上GaN外延材料的应力随着低温AlN插入层数的变化进行了分析研究。通过喇曼散射谱在高频E2(TO)模式下的测试分析发现,随着低温AlN插入层数的增加,GaN材料的E2(TO)峰位逐渐接近体GaN材料的E2(TO)峰位(无应力体GaN材料的E2(TO)峰位为568cm-1),计算得出GaN材料的应力从1.09GPa减小到0.42GPa。同时,使用室温光荧光谱进行了分析验证。结果表明,Si衬底上GaN外延材料受到的是张应力,通过低温AlN插入层技术可以有效降低GaN材料的应力,并且最终实现了表面光亮的厚层无裂纹GaN材料。     

含薄夹层盐岩地层套管等效应力分析

采用FLAC3D三维有限差分软件,建立了套管-水泥环-层状地层三维有限差分模型,分别研究了泥岩夹层弹性参数、厚度对含薄夹层盐岩地层界面处以及层内套管等效应力的影响。夹层厚度对上下岩层中的套管等效应力都有影响,泥岩和盐岩力学特性上的不匹配导致二者界面附近套管受力不均衡;夹层较厚时,套管等效应力相对较小;与泥岩相比,盐岩中套管等效应力较大,套管更容易发生屈服;夹层弹性参数不同时,夹层弹性模量越低,界面处以及夹层层内套管等效应力越大。该研究为含薄夹层盐岩地层套管设计和井筒安全性评价提供了理论依据。     

纵向非均质砂层内石油运移和聚集的模拟实验

通过不同充注方式层内非均质砂层油运移和聚集的二维模拟实验表明:正韵律砂层中,不同非均质程度,即不同渗透率级差的砂层,在不同的充注方式和能量条件下,油气运移路径和通道与含油层位具有差异。当渗透率级差较小时,中部渗透率中等的砂层比下部渗透率大的砂层和上部渗透率小的砂层更容易成为油气运移路径和通道,成为含油层;当渗透率级差较大时,下部渗透率大的砂层比中部渗透率中等的砂层和上部渗透率小的砂层更容易成为油气运移路径和通道,为含油层。反韵律砂层中,渗透率级差较小时,上部渗透率大的砂层和中部渗透率中等的砂层比下部渗透率小的砂层更容易成为油气运移路径和通道,为含油层。在稳态充注条件下,侧向充注和断层充注含油层位基本相同,含油饱和度在垂向上表现为"韵律"特征;断层幕式充注下,含油面积更大,中等渗透率和大渗透率砂层均为含油层,且在大渗透率砂层中运移效率较高。