涤棉府绸染色条花疵病的产生和控制

本文分析了T/C府绸集色条花产生的原因。通过工艺条件和操作方法,染色条花疵病得到明显改善。     

三辊穿孔和轧管所产生的钢管壁厚极差和波浪形内螺纹

定量描述了实际生产过程中三辊斜轧穿孔所产生的钢管壁厚极差和波浪形内螺纹，初步探讨了三辊轧管机对钢管壁厚极差和波浪形内螺纹的影响。     

基于B／S的国贸商务信息管理系统开发研究

阐述了B/S模式的基本原理及特点,实现了基于B/S模式的国贸商务信息系统,并对实现中采用的技术作了简要的讨论。此系统是一个跨区域、跨平台的商务信息管理系统,能够实现国贸公司内部信息,如外销、采购、库存等信息的实时交互,使信息得到及时的传递。     

西门子PLC与计算机间的通讯程序设计

介绍了西门子（Siemens）公司生产的S7－200型PLC与计算机之间的通讯网络构成及主要通讯指令，说明了利用PLC进行通信的实质和设计步骤，给出了PLC与计算机通讯时上位机和下位机的相应程序。     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Si衬底上横向外延GaN材料的微结构和光学性质的研究

用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。透射电子显微镜 (TEM )的研究结果表明 ,横向外延区域GaN的位错密度明显减小。由于SiO2 掩膜腐蚀角的不同 (分别为 90°和 6 6°) ,导致了横向外延GaN材料一些独特的微观形貌。微区拉曼光谱由数百条拉曼散射曲线组成 ,每一条曲线有三个振动模 ,分别对应Si振动模式 (5 2 0cm- 1) ,E2 模式 (5 6 6cm- 1)和E1(LO)模式(732cm- 1)。在垂直条纹方向 ,峰位和峰宽没有明显的变化 ,而峰强约 5 μm会发生周期性变化     

实时时钟芯片 M48T86 及其应用

M48T86是意法半导体公司（ST公司）生产的一种实时时钟/日历芯片。它具有精确计时、定时报警输出等功能，由于其内置128字节的非易失性RAM，因而具有功能强、使用方便等特点。文中详细介绍了M48T86的引脚功能，性能特点和主要参数，给出了其在检测系统中的应用电路和程序设计方法。     

发动机连杆螺纹孔加工质量的改进

对发动机连杆螺纹孔在攻丝过程中出现烂牙、粗糙度差等加工质量问题进行了分析，提出了解决问题的方法，使连杆的合格率行到显著的提高。     

In Situ Formation of a Novel Nanocomposite Structure Based on MCM-41 and Polyethylene

M41S materials are prepared by in situ assembly of inorganic precursors and organic template and can be viewed as nanocomposites of the siliceous phase and organic surfactant. Calcination of these precursors gives the M41S materials that have been used to prepare novel nanocomposite structures, in which the organic phase inside the nano-sized pores is isolated by the nano-sized inorganic pore walls. The nanocomposite structures can be formed by in situ polymerization of monomers inside the channels. Polymerization of ethylene takes place inside the nano-sized pores, producing the desired nanocomposite structure. The resulting polyethylene was found to be a mixture of crystalline and amorphous phases.     

UHF ASK/FSK 发射器 T5750 的原理及应用

T5750是ATMEL公司推出的单片UHFASK/FSK发射器芯片 ,它内含发射功率放大器、晶体振荡器、压控振荡器、相频检波器、分频器、充电泵等电路。当T5750在868～928MHz范围内工作时 ,其输出功率为8dBm ,数据速率为32kbps。文中介绍了T5750的结构功能及应用实例。