超薄栅氧化层中的软击穿的击穿机理和击穿模型

软击穿是与氧化层质量密切相关的一种新的击穿形式。当氧化层厚度小于5nm时,软击穿效应显著,是超薄栅氧化层的主要失效机理。通过对国外软击穿研究状况的分析,对超薄栅氧化层中软击穿的失效模型和机理进行了综述。     

装联工艺中低频电缆组件的电磁兼容问题

随着电子信息技术的发展,越来越多的电子设备系统都有电磁兼容性要求.低频电缆组件作为电子设备的组成部分,其电磁兼容问题尤为重要.从线缆的选取、导线屏蔽层的处理和电缆屏蔽层与机箱的搭接三方面论述了电缆组件制造和与系统装联时应遵循的电磁兼容工艺要求,并介绍了一些行之有效的工艺处理方法.     

强化耐高频噪声的挠性板

概述了强化高频耐噪音的挠性板(FPC)及其制造工艺。     

The forward bias current density–voltage–temperature (J–V–T) characteristics of Al–SiO2–pSi (MIS) Schottky diodes

Metal–insulator–semiconductor Schottky diodes were fabricated to investigate the tunnel effect and the dominant carrier transport mechanism by using current density–voltage (J–V) and capacitance–voltage (C–V) measurements in the temperature range of 295–370?K. The slope of the ln?J–V curves was almost constant value over the nearly four decades of current and the forward bias current density J is found to be proportional to J_o (T) exp(AV). The values of N_ss estimated from J–V and C–V measurements decreased with increasing temperature. The temperature dependence of the barrier heights obtained from forward bias J–V was found to be entirely different than that from the reverse bias C–V characteristics. All these behaviours confirmed that the prepared samples have a tunnel effect and the current transport mechanism in the temperature range of 295–370?K was predominated by a trap-assisted multi-step tunnelling, although the Si wafer has low doping concentration and the measurements were made at moderate temperature.     

金属结单电子晶体管的模型建立及实验验证

在正统理论的基础上,使用主方程法建立了金属结单电子晶体管的器件模型和算法流程.将电容、电阻和温度等参数代入器件模型得到的I-Ⅴ特性曲线与实验结果吻合较好,从而验证了模型、算法以及程序流程的正确性.此外,通过详细讨论模拟与实验的三组曲线差别,得到模型使用主方程的稳态解是导致模拟与实验之间结果存在差别的主要原因,即求解含有时间的主方程将增加模拟精度;而且,指出镜像电荷引起的电势使电流随电压呈现指数增加的主要影响因素,明显偏离理论模拟的线性增加趋势.     

分配网络中的反向入侵噪声及其防范措施

从实践的角度,分析分配网络中入侵噪声进入反向回路的主要途径,并提出防范措施.     

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and <Emphasis Type="Italic">in situ</Emphasis> RHEED

The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c (8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c (8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c (8 × 8) one. The c (8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c (8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.     

盾构隧道施工对某高架桥桩基影响分析

针对盾构隧道下穿城市高架对高架桥影响问题,运用 FLAC3D数值分析软件模拟盾构动态施工过程对高架桥桩基的影响。数值模拟结果显示盾构施工对高架桥桩基的影响主要表现在桩体的竖向和水平位移上,对桩体水平位移的影响要大于竖向位移;对桩体水平位移影响在桩顶较大,随着桩体深度增加桩体水平位移逐渐变小。     

Self-assembled monolayers of a disulphide-derivatised cobalt-porphyrin on gold

A self-assembled monolayer (SAM) of a novel cobalt(II)porphyrin disulphide derivative was prepared on flat gold(1 1 1) electrode. Evidence for surface modification was provided by electrochemical reductive desorption of the monolayer and ellipsometry, consistent with a coverage of 2.5 × 10⁻¹⁰ mol cm⁻² and a thickness of 13 Å, respectively. Both results support the presence of SAMs where the molecules share an intermediate position between perpendicular and flat orientation. Scanning tunnelling microscopy have also proven the formation of CoPSS SAMs, however high-resolution images could only be obtained when the CoPSS molecules were diluted in an hexanethiol SAM. The electrocatalytic activity of the surface confined Co-porphyrin was evaluated for the oxygen reduction. Voltammetric data indicate that reaction involves two electrons consistent with the formation of hydrogen peroxide. Under similar experimental conditions the data obtained for an iron-porphyrin analogue points for a full reduction of dioxygen to water.     

机械式盾尾间隙实时测量装置研制及应用

针对非接触式盾尾间隙测量装置环境适应性差、精度低、造价高等不足,进行了接触式盾尾间隙测量装置的研制与开发。采用磁敏角度传感器进行角度测量,再经数学计算将角度值转换成距离值,得到对应的盾尾间隙值,实现盾尾间隙实时测量。该装置在工程现场进行了试验与应用,达到了较好的应用效果：测量装置可实现对盾尾间隙的连续实时测量,测量数据可以本地存储和远程读取,测量效率高;机械式测量不需要经过复杂的数据处理,测量误差相对较小,可以控制在1 mm以内;机械式盾尾间隙测量装置成本较低,达到非接触式测量装置造价的1/5,可有效降低工程成本。